DOI: 10.1016/j.sna.2009.12.038. Atomic layer deposition enabled interconnect technology for vertical nanowire arrays

Atomic layer deposition enabled interconnect technology for vertical nanowire arrays

10.1016/j.sna.2009.12.038

Crossref journal-article

Elsevier BV

Sensors and Actuators A: Physical (78)

Authors 9

Jen-Hau Cheng (first)
Dragos Seghete (additional)
Myongjai Lee (additional)
John B. Schlager (additional)
Kris A. Bertness (additional)
Norman A. Sanford (additional)
Ronggui Yang (additional)
Steven M. George (additional)
Y.C. Lee (additional)

References 26 Referenced 5

10.1021/nl0602894 / Nano Lett. / Direct electrical measurement of the self-assembled nickel silicide nanowire by Kim (2006)
10.1088/0957-4484/17/11/S01 / IEEE Nanotechnol. / Vertical wrap-gated nanowire transistors by Tomas Bryllert (2006)
10.1002/smll.200500181 / Small / Realization of a silicon nanowire vertical surround-gate field-effect transistor by Volker Schmidt (2006)
10.1021/nl051689e / Nano Lett. / Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes by Qian (2005)
{'issue': '7–8', 'key': '10.1016/j.sna.2009.12.038_bib5', 'article-title': 'Nanoscale ultraviolet-light-emitting diodes using wide-bandgap gallium nitride nanorods', 'volume': '15', 'author': 'Hwa-Mok Kim', 'year': '2003', 'journal-title': 'Adv. Mater.'} / Adv. Mater. / Nanoscale ultraviolet-light-emitting diodes using wide-bandgap gallium nitride nanorods by Hwa-Mok Kim (2003)
10.1038/nnano.2007.411 / Nat. Nanotechnol. / High-performance lithium battery anodes using silicon nanowires by Chan (2008)
10.1038/nnano.2008.26 / Nat. Nanotechnol. / Bottom-up assembly of large-area nanowire resonator arrays by Mingwei Li (2008)
10.1021/nl071637k / Nano Lett. / Selective surface functionalization of silicon nanowires via nanoscale Joule heating by Park (2007)
10.1007/s00339-004-3177-x / Appl. Phys. A / A novel interconnection technique for manufacturing nanowire devices by Saif Islam (2005)
10.1021/nl049659j / Nano Lett. / Scalable interconnection and integration of nanowire devices without registration by Jin (2004)
10.1063/1.2949080 / Appl. Phys. Lett. / InAs nanowire metal-oxide-semiconductor capacitors by Stefano Roddaro (2008)
10.1002/adma.200700285 / Adv. Mater. (Weinheim, Ger.) / Epitaxial growth of indium arsenide nanowires on silicon using nucleation templates formed by self-assembled organic coatings by Mårtensson (2007)
10.1038/nnano.2007.411 / Nat. Nanotechnol. / High-performance lithium battery anodes using silicon nanowires by Chan (2008)
{'key': '10.1016/j.sna.2009.12.038_bib14', 'series-title': '59th Electronic Components and Technology Conference (ECTC)', 'first-page': '843', 'article-title': 'Packaging and Interconnect technologies for the development of GaN nanowire-based light emitting diodes', 'author': 'Myongjai Lee', 'year': '2009'} / 59th Electronic Components and Technology Conference (ECTC) / Packaging and Interconnect technologies for the development of GaN nanowire-based light emitting diodes by Myongjai Lee (2009)
10.1088/0957-4484/17/15/029 / IEEE Nanotechnol. / A universal approach to electrically connecting nanowire arrays using nanoparticles-application to a novel gas sensor architecture by Parthangal (2006)
10.1088/0957-4484/19/34/345304 / IEEE Nanotechnol. / A generic approach for vertical integration of nanowires by Latu-Romain (2008)
10.1016/j.jcrysgro.2005.11.079 / J. Crystal Growth / Spontaneously grown GaN and AlGaN nanowires by Bertness (2006)
10.1007/s11664-006-0102-4 / J. Electronic Mater. / Catalyst-free growth of GaN nanowires by Bertness (2006)
10.1021/cm020607+ / Chem. Mater. / Growth of ZnO/Al2O3 alloy films using atomic layer deposition techniques by Elam (2003)
10.1021/jp9536763 / J. Phys. Chem. / Surface chemistry for atomic layer growth by George (1996)
CYCLOTENE Advanced Electronic Resins—Processing Procedures for CYCLOTENE 3000 Series for Dry Etching Resins, February 2005 (www.dow.com/cyclotene).
Tevye Kuykendall, Philipp Ulrich, Shaul Aloni, Peidong Yang, Complete composition tunability of InGaN nanowires using a combinatorial approach, Nat. Mater. 6 (2007). (10.1038/nmat2037)
10.1063/1.2711419 / Appl. Phys. Lett. / Tuning optical band gap of vertically aligned ZnO nanowire arrays grown by homoepitaxial electrodeposition by Savarimuthu Philip Anthony (2007)
10.1016/0031-8914(67)90062-6 / Physica by Varshni (1967)
10.1063/1.2940732 / J. Appl. Phys. / Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy by Schlager (2008)
10.1063/1.2206133 / Appl. Phys. Lett. / Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy by Schlager (2006)

Dates

Type	When
Created	15 years, 7 months ago (Jan. 5, 2010, 4:18 a.m.)
Deposited	6 years, 3 months ago (May 24, 2019, 6:49 p.m.)
Indexed	2 years, 6 months ago (Feb. 23, 2023, 1:29 a.m.)
Issued	14 years, 7 months ago (Jan. 1, 2011)
Published	14 years, 7 months ago (Jan. 1, 2011)
Published Print	14 years, 7 months ago (Jan. 1, 2011)

Funders 0

None

BibTeX

@article{Cheng_2011, title={Atomic layer deposition enabled interconnect technology for vertical nanowire arrays}, volume={165}, ISSN={0924-4247}, url={http://dx.doi.org/10.1016/j.sna.2009.12.038}, DOI={10.1016/j.sna.2009.12.038}, number={1}, journal={Sensors and Actuators A: Physical}, publisher={Elsevier BV}, author={Cheng, Jen-Hau and Seghete, Dragos and Lee, Myongjai and Schlager, John B. and Bertness, Kris A. and Sanford, Norman A. and Yang, Ronggui and George, Steven M. and Lee, Y.C.}, year={2011}, month=jan, pages={107–114} }

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