Crossref
journal-article
Elsevier BV
Progress in Surface Science (78)
References
154
Referenced
136
10.1038/nnano.2012.193
/ Nat. Nanotechnol. / Electronics and optoelectronics of two-dimensional transition metal dichalcogenides by Wang (2012)10.1038/nnano.2010.279
/ Nat. Nanotechnol. / Single-layer MoS2 transistors by Radisavljevic (2011)10.1038/nature11408
/ Nature / Graphene and boron nitride lateral heterostructures for atomically thin circuitry by Levendorf (2012)10.1016/j.progsurf.2013.02.001
/ Prog. Surf. Sci. / Manipulating the electronic and chemical properties of graphene via molecular functionalization by Mao (2013)10.1021/cr3000412
/ Chem. Rev. / Functionalization of graphene: covalent and non-covalent approaches, derivatives and applications by Georgakilas (2012)10.1016/j.pmatsci.2012.03.002
/ Prog. Mater Sci. / Chemical functionalization of graphene and its applications by Kuila (2012)10.1002/adma.200901285
/ Adv. Mater. / Synthesis, structure, and properties of boron- and nitrogen-doped graphene by Panchakarla (2009)10.1021/nn901850u
/ ACS Nano / Nitrogen-doped graphene as efficient metal-free electrocatalyst for oxygen reduction in fuel cells by Qu (2010)10.1038/nature11458
/ Nature / A roadmap for graphene by Novoselov (2012)10.1063/1.4807658
/ Appl. Phys. Lett. / Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor by Lin (2012)10.1021/nn4047474
/ ACS Nano / Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy by Li (2013)10.1021/nl201874w
/ Nano Lett. / Photoluminescence from chemically exfoliated MoS2 by Eda (2011)10.1021/nn400280c
/ ACS Nano / Progress, challenges, and opportunities in two-dimensional materials beyond graphene by Butler (2013)10.1073/pnas.0502848102
/ Proc. Natl. Acad. Sci. USA / Two-dimensional atomic crystals by Novoselov (2005)10.1126/science.1158877
/ Science / Graphene: status and prospects by Geim (2009)10.1103/RevModPhys.81.109
/ Rev. Mod. Phys. / The electronic properties of graphene by Neto (2009)10.1021/nl1022139
/ Nano Lett. / Large scale growth and characterization of atomic hexagonal boron nitride layers by Song (2010)10.1021/nl203249a
/ Nano Lett. / Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition by Kim (2012)10.1002/adma.201304937
/ Adv. Mater. / Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors by Wang (2014)10.1016/j.mattod.2014.04.001
/ Mater. Today / Graphene-like layered metal dichalcogenide/graphene composites: synthesis and applications in energy storage and conversion by Chen (2014)10.1038/nnano.2012.95
/ Nat. Nanotechnol. / Valley polarization in MoS2 monolayers by optical pumping by Zeng (2012)10.1038/nnano.2012.96
/ Nat. Nanotechnol. / Control of valley polarization in monolayer MoS2 by optical helicity by Mak (2012)10.1103/PhysRevLett.105.136805
/ Phys. Rev. Lett. / Atomically thin MoS2: a new direct-gap semiconductor by Mak (2010)10.1038/nchem.1589
/ Nat. Chem. / The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets by Chhowalla (2013)10.1039/c2cs35387c
/ Chem. Soc. Rev. / Metal dichalcogenide nanosheets: preparation, properties and applications by Huang (2013)10.1021/nn4009406
/ ACS Nano / Stability and exfoliation of germanane: a germanium graphane analogue by Bianco (2013)10.1021/nl301047g
/ Nano Lett. / Evidence of silicene in honeycomb structures of silicon on Ag(111) by Feng (2012)10.1021/nl4019287
/ Nano Lett. / Two-dimensional transition metal honeycomb realized: Hf on Ir(111) by Li (2013)10.1038/nature12385
/ Nature / Van der Waals heterostructures by Geim (2013)10.1038/nphys2080
/ Nat. Phys. / Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces by Li (2011)10.1038/nature12494
/ Nature / Interface superconductor with gap behavior like a high-temperature superconductor by Richter (2013)10.1038/nnano.2010.172
/ Nat. Nanotechnol. / Boron nitride substrates for high-quality graphene electronics by Dean (2010)10.1126/science.1235547
/ Science / Strong light-matter interactions in heterostructures of atomically thin films by Britnell (2013)10.1103/PhysRevB.76.073103
/ Phys. Rev. B / Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations by Giovannetti (2007)10.1038/ncomms1464
/ Nat. Commun. / Strong plasmonic enhancement of photovoltage in graphene by Echtermeyer (2011)10.1038/nmat4064
/ Nat. Mater. / Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors by Huang (2014)10.1038/nnano.2014.150
/ Nat. Nanotechnol. / Atomically thin p–n junctions with van der Waals heterointerfaces by Lee (2014)10.1088/0031-8949/2012/T146/014006
/ Phys. Scr. / Two-dimensional crystals-based heterostructures: materials with tailored properties by Novoselov (2012)10.1021/nn3059136
/ ACS Nano / Nonvolatile memory cells based on MoS2/graphene heterostructures by Bertolazzi (2013)10.1103/RevModPhys.83.837
/ Rev. Mod. Phys. / Nobel lecture: graphene: materials in the flatland by Novoselov (2011)10.1038/nature04233
/ Nature / Two-dimensional gas of massless Dirac fermions in graphene by Novoselov (2005)10.1557/jmr.2014.6
/ J. Mater. Res. / Two-dimensional layered materials: structure, properties, and prospects for device applications by Kaul (2014)10.1021/nl9011497
/ Nano Lett. / Selective sputtering and atomic resolution imaging of atomically thin boron nitride membranes by Meyer (2009)10.1021/nl903868w
/ Nano Lett. / Emerging photoluminescence in monolayer MoS2 by Splendiani (2010)10.1103/PhysRevB.87.075451
/ Phys. Rev. B / Electronic properties of the MoS2–WS2 heterojunction by Košmider (2013)10.1038/nnano.2013.100
/ Nat. Nanotechnol. / Ultrasensitive photodetectors based on monolayer MoS2 by Lopez-Sanchez (2013)10.1038/nnano.2013.277
/ Nat. Nanotechnol. / Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 by Zhang (2014)10.1038/nphys2524
/ Nat. Phys. / Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2 by Wu (2013)10.1103/PhysRevLett.108.196802
/ Phys. Rev. Lett. / Coupled spin and valley physics in monolayers of MoS2 and other Group-VI dichalcogenides by Xiao (2012)10.1038/nphys2942
/ Nat. Phys. / Spin and pseudospins in layered transition metal dichalcogenides by Xu (2014)10.1038/ncomms2817
/ Nat. Commun. / Resonant tunneling and negative differential conductance in graphene transistors by Britnell (2013)10.1038/ncomms2652
/ Nat. Commun. / Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices by Choi (2013)10.1021/nl404795z
/ Nano Lett. / Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics by Yu (2014)10.1038/nature07719
/ Nature / Large-scale pattern growth of graphene films for stretchable transparent electrodes by Kim (2009)10.1038/ncomms3541
/ Nat. Commun. / Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride by Liu (2013)10.1002/smll.201102654
/ Small / Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate by Zhan (2012)- H. Wang, L.L. Yu, Y.H. Lee, W.J. Fang, A. Hsu, P. Herring, M. Chin, M. Dubey, L.J. Li, J. Kong, T. Palacios, Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition, arXiv:1302.4027v1.
10.1126/science.1102896
/ Science / Electric field effect in atomically thin carbon films by Novoselov (2004)10.1038/srep01134
/ Sci. Rep. / Interlayer catalytic exfoliation realizing scalable production of large-size pristine few-layer graphene by Geng (2012)10.1038/nnano.2008.215
/ Nat. Nanotechnol. / High-yield production of graphene by liquid-phase exfoliation of graphite by Hernandez (2008)10.1038/ncomms3995
/ Nat. Commun. / High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide by Zheng (2014)10.1021/nl803279t
/ Nano Lett. / Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties by Wei (2009)10.1126/science.1171245
/ Science / Large-area synthesis of high-quality and uniform graphene films on copper foils by Li (2009)10.1021/nl801827v
/ Nano Lett. / Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition by Reina (2009)10.1038/ncomms3096
/ Nat. Commun. / Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene by Zhou (2013)10.1021/jz3007029
/ J. Phys. Chem. Lett. / Catalytic growth of graphene: towards large-area single-crystalline graphene by Ago (2012)10.1002/anie.201306086
/ Angew. Chem. Int. Ed. / Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices by Wei (2013)10.1021/ja403583s
/ J. Am. Chem. Soc. / Growth intermediates for CVD graphene on Cu(111): carbon clusters and defective graphene by Niu (2013)10.1021/nl2006005
/ Nano Lett. / Novel growth mechanism of epitaxial graphene on metals by Zangwill (2011)10.1038/srep04431
/ Sci. Rep. / Elementary process for CVD graphene growth on Cu(110): size-selective carbon clusters by Zhang (2014){'key': '10.1016/j.progsurf.2014.11.001_b0355', 'series-title': 'Graphene Chemistry: Theoretical Perspectives', 'article-title': 'Mechanisms of graphene chemical vapor deposition (CVD) growth', 'author': 'Zhang', 'year': '2013'}
/ Graphene Chemistry: Theoretical Perspectives / Mechanisms of graphene chemical vapor deposition (CVD) growth by Zhang (2013)10.1038/nmat1849
/ Nat. Mater. / The rise of graphene by Geim (2007)10.1021/ar300203n
/ Acc. Chem. Res. / Review of chemical vapor deposition of graphene and related applications by Zhang (2013)10.1039/c0ee00683a
/ Energy Environ. Sci. / Graphene based new energy materials by Sun (2011)10.1002/adma.200904144
/ Adv. Mater. / Controllable synthesis of graphene and its applications by Wei (2010)10.1038/nphys1463
/ Nat. Phys. / Observation of Van Hove singularities in twisted graphene layers by Li (2010)10.1103/RevModPhys.83.407
/ Rev. Mod. Phys. / Electronic transport in two-dimensional graphene by Sarma (2011)10.1021/cr300263a
/ Chem. Rev. / Graphene-like two-dimensional materials by Xu (2013)10.1021/nl071254m
/ Nano Lett. / Graphene thickness determination using reflection and contrast spectroscopy by Ni (2007)10.1002/anie.201204208
/ Angew. Chem. Int. Ed. / An effective method for the fabrication of few-layer-thick inorganic nanosheets by Zeng (2012)10.1126/science.1194975
/ Science / Two-dimensional nanosheets produced by liquid exfoliation of layered materials by Coleman (2011)10.1073/pnas.1200339109
/ Proc. Natl. Acad. Sci. USA / Uniform hexagonal graphene flakes and films grown on liquid copper surface by Geng (2012)10.1038/nmat3633
/ Nat. Mater. / Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide by van der Zande (2013)10.1038/srep01866
/ Sci. Rep. / Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films by Yu (2013)10.1021/nl2043612
/ Nano Lett. / Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates by Liu (2012)10.1002/adma.201104798
/ Adv. Mater. / Synthesis of large-area MoS2 atomic layers with chemical vapor deposition by Lee (2012)10.1039/c2nr31833d
/ Nanoscale / Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization by Lin (2012)10.1038/nature12763
/ Nature / Face-to-face transfer of wafer-scale graphene films by Gao (2014)10.1038/nnano.2013.63
/ Nat. Nanotechnol. / A general method for transferring graphene onto soft surfaces by Song (2013)10.1021/nl400902v
/ Nano Lett. / Formation of a stable p–n junction in a liquid-gated MoS2 ambipolar transistor by Zhang (2013)10.1038/nnano.2010.89
/ Nat. Nanotechnol. / Graphene transistors by Schwierz (2010)10.1038/nmat2082
/ Nat. Mater. / Gate-induced insulating state in bilayer graphene devices by Oostinga (2007)10.1103/PhysRevLett.98.206805
/ Phys. Rev. Lett. / Energy band-gap engineering of graphene nanoribbons by Han (2007)10.1038/nature09211
/ Nature / Atomically precise bottom-up fabrication of graphene nanoribbons by Cai (2010)10.1021/jp806905e
/ J. Phys. Chem. B / Tuning the electronic structure of graphene by an organic molecule by Lu (2009)10.1021/nn400340q
/ ACS Nano / Molecular doping and band-gap opening of bilayer graphene by Samuels (2013)10.1126/science.1218461
/ Science / Field-effect tunneling transistor based on vertical graphene heterostructures by Britnell (2012)10.1038/nature10679
/ Nature / Tunnel field-effect transistors as energy-efficient electronic switches by Ionescu (2011)10.1021/nl201771h
/ Nano Lett. / Graphene plasmonics: a platform for strong light-matter interactions by Koppens (2011)10.1038/nnano.2012.224
/ Nat. Nanotechnol. / Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics by Georgiou (2013)10.1021/nn402954e
/ ACS Nano / Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures by Lee (2013)10.1038/nnano.2013.219
/ Nat. Nanotechnol. / Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials by Yu (2013)10.1038/nnano.2013.206
/ Nat. Nanotechnol. / Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices by Roy (2013)10.1038/nmat3518
/ Nat. Mater. / Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters by Yu (2013)10.1038/501474a
/ Nature / Interface superconductivity found in single crystal by Reich (2013)10.1038/nature07293
/ Nature / High-temperature interface superconductivity between metallic and insulating copper oxides by Gozar (2008)10.1126/science.1146006
/ Science / Superconducting interfaces between insulating oxides by Reyren (2007)10.1557/jmr.2013.284
/ J. Mater. Res. / Bilayers of transition metal dichalcogenides: different stackings and heterostructures by Terrones (2014)10.1126/science.1237240
/ Science / Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure by Hunt (2013)10.1007/s11249-011-9774-x
/ Tribol. Lett. / A Raman spectroscopic study of MoS2 and MoO3: applications to tribological systems by Windom (2011)10.1063/1.4767458
/ J. Appl. Phys. / Inertness and degradation of (0001) surface of Bi2Se3 topological insulator by Golyashov (2012)10.1038/nmat3386
/ Nat. Mater. / Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices by Haigh (2012)10.1021/jz2015555
/ J. Phys. Chem. Lett. / Domain structure and boundary in single-layer graphene grown on Cu (111) and Cu (100) films by Ogawa (2012)10.1021/nl9037714
/ Nano Lett. / Direct chemical vapor deposition of graphene on dielectric surfaces by Ismach (2010)10.1021/nl400815w
/ Nano Lett. / Chemical vapor deposition and characterization of aligned and incommensurate graphene/hexagonal boron nitride heterostack on Cu(111) by Roth (2013)10.1002/adma.201204904
/ Adv. Mater. / A platform for large-scale graphene electronics – CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride by Wang (2013)10.1016/j.carbon.2011.07.062
/ Carbon / Nucleation and growth of single crystal graphene on hexagonal boron nitride by Tang (2012)10.1038/nmat3695
/ Nat. Mater. / Epitaxial growth of single-domain graphene on hexagonal boron nitride by Yang (2013)10.1038/srep02666
/ Sci. Rep. / Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition by Tang (2013)10.1038/nmat2711
/ Nat. Mater. / Atomic layers of hybridized boron nitride and graphene domain by Ci (2010)10.1038/nnano.2012.256
/ Nat. Nanotechnol. / In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes by Liu (2013)10.1021/nl200464j
/ Nano Lett. / Direct growth of graphene/hexagonal boron nitride stacked layers by Liu (2011)10.1021/nl304080y
/ Nano Lett. / Scalable synthesis of uniform few-layer hexagonal boron nitride dielectric films by Sutter (2013)10.1109/JPROC.2013.2257634
/ Proc. IEEE / Graphene field-effect transistors based on boron-nitride dielectrics by Meric (2013)10.1038/nnano.2014.60
/ Nat. Nanotechnol. / Photoinduced doping in heterostructures of graphene and boron nitride by Ju (2014)10.1038/nphys2272
/ Nat. Phys. / Emergence of superlattice Dirac points in graphene on hexagonal boron nitride by Yankowitz (2012)10.1038/nature12186
/ Nature / Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices by Dean (2013)10.1038/ncomms5461
/ Nat. Commun. / Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures by Chen (2014)10.1038/nphys2954
/ Nat. Phys. / Commensurate–incommensurate transition in graphene on hexagonal boron nitride by Woods (2014)10.1038/nature12187
/ Nature / Cloning of Dirac fermions in graphene superlattices by Ponomarenko (2013)10.1103/PhysRevB.81.241412
/ Phys. Rev. B / Gap opening in graphene by shear strain by Cocco (2010)10.1088/0034-4885/69/2/R02
/ Rep. Prog. Phys. / High dielectric constant gate oxides for metal oxide Si transistors by Robertson (2006)10.1021/nl902788u
/ Nano Lett. / Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors by Farmer (2009)10.1038/nnano.2012.217
/ Nat. Nanotechnol. / Growth of a two-dimensional dielectric monolayer on quasi-freestanding graphene by Addou (2013)10.1063/1.4805042
/ J. Appl. Phys. / Preparation and characterization of Ni(111)/graphene/Y2O3(111) heterostructures by Dahal (2013)10.1063/1.4774090
/ Appl. Phys. Lett. / Band offsets and heterostructures of two-dimensional semiconductors by Kang (2013)10.1038/nmat3263
/ Nat. Mater. / Photonic design principles for ultrahigh-efficiency photovoltaics by Polman (2012)10.1021/nn405938z
/ ACS Nano / Few-layer MoS2: a promising layered semiconductor by Ganatra (2014)10.1038/srep01549
/ Sci. Rep. / Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides by Terrones (2013)10.1039/c4nr00783b
/ Nanoscale / Van der Waals trilayers and superlattices: modification of electronic structures of MoS2 by intercalation by Lu (2014)10.1021/nl4030648
/ Nano Lett. / Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures by Kang (2013)10.1073/pnas.1405435111
/ Proc. Natl. Acad. Sci. USA / Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides by Fang (2014)10.1021/nl4033704
/ Nano Lett. / Role of the seeding promoter in MoS2 growth by chemical vapor deposition by Ling (2014)10.1021/nl4032296
/ Nano Lett. / Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide by Gong (2014)10.1021/nn501175k
/ ACS Nano / Chemical vapor deposition growth of crystalline monolayer MoSe2 by Wang (2014)10.1021/nl501000k
/ Nano Lett. / Vertical heterostructures of layered metal chalcogenides by van der Waals epitaxy by Zhang (2014)-
Editorial, Nat. Mater. 11 (2012) 9.
(
10.1038/nmat3199
) 10.1038/srep03841
/ Sci. Rep. / Engineering topological surface states and Giant Rashba spin splitting in BiTeI/Bi2Te3 heterostructures by Zhou (2014)10.1103/PhysRevLett.112.096802
/ Phys. Rev. Lett. / Proximity effect in graphene–topological-insulator heterostructures by Zhang (2014)10.1038/nnano.2014.167
/ Nat. Nanotechnol. / Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures by Hong (2014)10.1021/nl501962c
/ Nano Lett. / Photovoltaic effect in an electrically tunable van der Waals heterojunction by Furchi (2014)10.1021/nn501723y
/ ACS Nano / Field-effect transistors built from all two-dimensional material components by Roy (2014)10.1021/nn405685j
/ ACS Nano / Large-area single-layer MoSe2 and its van der Waals heterostructures by Shim (2014)10.1126/science.1244358
/ Science / One-dimensional electrical contact to a two-dimensional material by Wang (2013)
Dates
Type | When |
---|---|
Created | 10 years, 9 months ago (Nov. 27, 2014, 1:17 p.m.) |
Deposited | 1 year, 2 months ago (June 5, 2024, 7:02 a.m.) |
Indexed | 3 weeks ago (Aug. 7, 2025, 5:02 a.m.) |
Issued | 10 years, 6 months ago (Feb. 1, 2015) |
Published | 10 years, 6 months ago (Feb. 1, 2015) |
Published Print | 10 years, 6 months ago (Feb. 1, 2015) |
Funders
2
NSFC
10.13039/501100001809
National Natural Science Foundation of ChinaRegion: Asia
gov (National government)
Labels
11
- Chinese National Science Foundation
- Natural Science Foundation of China
- National Science Foundation of China
- NNSF of China
- NSF of China
- 国家自然科学基金委员会
- National Nature Science Foundation of China
- Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
- NSFC
- NNSF
- NNSFC
Awards
1
- 11227902
CAS
10.13039/501100002367
Chinese Academy of SciencesRegion: Asia
gov (Universities (academic only))
Labels
3
- 中国科学院
- Academia Sinica
- CAS
Awards
1
- XDB04040300
@article{Niu_2015, title={From two-dimensional materials to heterostructures}, volume={90}, ISSN={0079-6816}, url={http://dx.doi.org/10.1016/j.progsurf.2014.11.001}, DOI={10.1016/j.progsurf.2014.11.001}, number={1}, journal={Progress in Surface Science}, publisher={Elsevier BV}, author={Niu, Tianchao and Li, Ang}, year={2015}, month=feb, pages={21–45} }