DOI: 10.1016/j.physrep.2015.10.003. Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

10.1016/j.physrep.2015.10.003

Crossref journal-article

Elsevier BV

Physics Reports (78)

Bibliography

Di Bartolomeo, A. (2016). Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction. Physics Reports, 606, 1â58.

Authors 1

Antonio Di Bartolomeo (first)

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Dates

Type	When
Created	9 years, 10 months ago (Nov. 3, 2015, 8:44 p.m.)
Deposited	1 year, 2 months ago (June 12, 2024, 2:12 a.m.)
Indexed	9 hours ago (Sept. 4, 2025, 9:19 a.m.)
Issued	9 years, 8 months ago (Jan. 1, 2016)
Published	9 years, 8 months ago (Jan. 1, 2016)
Published Print	9 years, 8 months ago (Jan. 1, 2016)

Funders 0

None

BibTeX

@article{Di_Bartolomeo_2016, title={Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction}, volume={606}, ISSN={0370-1573}, url={http://dx.doi.org/10.1016/j.physrep.2015.10.003}, DOI={10.1016/j.physrep.2015.10.003}, journal={Physics Reports}, publisher={Elsevier BV}, author={Di Bartolomeo, Antonio}, year={2016}, month=jan, pages={1–58} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        9,
        4
      ]
    ],
    "date-time": "2025-09-04T13:19:01Z",
    "timestamp": 1756991941035,
    "version": "3.40.5"
  },
  "reference-count": 270,
  "publisher": "Elsevier BV",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2016,
            1,
            1
          ]
        ],
        "date-time": "2016-01-01T00:00:00Z",
        "timestamp": 1451606400000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://www.elsevier.com/tdm/userlicense/1.0/"
    }
  ],
  "content-domain": {
    "domain": [
      "elsevier.com",
      "sciencedirect.com"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2016,
        1
      ]
    ]
  },
  "DOI": "10.1016/j.physrep.2015.10.003",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2015,
        11,
        4
      ]
    ],
    "date-time": "2015-11-04T01:44:01Z",
    "timestamp": 1446601441000
  },
  "page": "1-58",
  "update-policy": "https://doi.org/10.1016/elsevier_cm_policy",
  "source": "Crossref",
  "is-referenced-by-count": 513,
  "special_numbering": "C",
  "title": "Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction",
  "prefix": "10.1016",
  "volume": "606",
  "author": [
    {
      "ORCID": "https://orcid.org/0000-0002-3629-726X",
      "authenticated-orcid": false,
      "given": "Antonio",
      "family": "Di Bartolomeo",
      "sequence": "first",
      "affiliation": []
    }
  ],
  "member": "78",
  "reference": [
    {
      "key": "10.1016/j.physrep.2015.10.003_br000005",
      "doi-asserted-by": "crossref",
      "first-page": "666",
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    {
      "key": "10.1016/j.physrep.2015.10.003_br001290",
      "doi-asserted-by": "crossref",
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      "key": "10.1016/j.physrep.2015.10.003_br001350",
      "doi-asserted-by": "crossref",
      "first-page": "2300",
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      "journal-title": "Small"
    }
  ],
  "container-title": "Physics Reports",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.elsevier.com/content/article/PII:S0370157315004354?httpAccept=text/xml",
      "content-type": "text/xml",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://api.elsevier.com/content/article/PII:S0370157315004354?httpAccept=text/plain",
      "content-type": "text/plain",
      "content-version": "vor",
      "intended-application": "text-mining"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        6,
        12
      ]
    ],
    "date-time": "2024-06-12T06:12:46Z",
    "timestamp": 1718172766000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://linkinghub.elsevier.com/retrieve/pii/S0370157315004354"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2016,
        1
      ]
    ]
  },
  "references-count": 270,
  "alternative-id": [
    "S0370157315004354"
  ],
  "URL": "http://dx.doi.org/10.1016/j.physrep.2015.10.003",
  "relation": {},
  "ISSN": [
    "0370-1573"
  ],
  "subject": [],
  "container-title-short": "Physics Reports",
  "published": {
    "date-parts": [
      [
        2016,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Elsevier",
      "name": "publisher",
      "label": "This article is maintained by"
    },
    {
      "value": "Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction",
      "name": "articletitle",
      "label": "Article Title"
    },
    {
      "value": "Physics Reports",
      "name": "journaltitle",
      "label": "Journal Title"
    },
    {
      "value": "https://doi.org/10.1016/j.physrep.2015.10.003",
      "name": "articlelink",
      "label": "CrossRef DOI link to publisher maintained version"
    },
    {
      "value": "article",
      "name": "content_type",
      "label": "Content Type"
    },
    {
      "value": "Copyright \u00a9 2015 Elsevier B.V. All rights reserved.",
      "name": "copyright",
      "label": "Copyright"
    }
  ]
}