DOI: 10.1016/j.physe.2007.09.171. Comparative study of memory-switching phenomena in phase change GeTe and Ge2Sb2Te5 nanowire devices

Comparative study of memory-switching phenomena in phase change GeTe and Ge2Sb2Te5 nanowire devices

10.1016/j.physe.2007.09.171

Crossref journal-article

Elsevier BV

Physica E: Low-dimensional Systems and Nanostructures (78)

Bibliography

Lee, S.-H., Jung, Y., Chung, H.-S., Jennings, A. T., & Agarwal, R. (2008). Comparative study of memory-switching phenomena in phase change GeTe and Ge2Sb2Te5 nanowire devices. Physica E: Low-Dimensional Systems and Nanostructures, 40(7), 2474â2480.

Authors 5

Se-Ho Lee (first)
Yeonwoong Jung (additional)
Hee-Suk Chung (additional)
Andrew T. Jennings (additional)
Ritesh Agarwal (additional)

References 21 Referenced 34

10.1103/PhysRevLett.21.1450 / Phys. Rev. Lett. by Ovshinsky (1968)
10.1063/1.370973 / J. Appl. Phys. by Volkert (1999)
10.1063/1.359779 / J. Appl. Phys. by Coombs (1995)
10.1038/nmat1350 / Nat. Mater. by Lankhorst (2005)
{'key': '10.1016/j.physe.2007.09.171_bib5', 'first-page': '20', 'author': 'Lee', 'year': '2004', 'journal-title': 'VLSI Tech. Dig.'} / VLSI Tech. Dig. by Lee (2004)
{'key': '10.1016/j.physe.2007.09.171_bib6', 'first-page': '803', 'author': 'Lai', 'year': '2001', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. by Lai (2001)
{'key': '10.1016/j.physe.2007.09.171_bib7', 'first-page': '699', 'author': 'Pirovano', 'year': '2003', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. by Pirovano (2003)
10.1557/mrs2003.144 / MRS Bull. by Lieber (2003)
10.1021/ja0625071 / J. Am. Chem. Soc. by Yu (2006)
10.1063/1.2397558 / Appl. Phys. Lett. by Lee (2006)
10.1021/ja065938s / J. Am. Chem. Soc. by Jung (2006)
10.1021/nl061102b / Nano Lett. by Meister (2006)
10.1063/1.1753975 / Appl. Phys. Lett. by Wagner (1964)
10.1063/1.1659189 / J. Appl. Phys. by Bahl (1970)
10.1103/PhysRevB.36.1595 / Phys. Rev. B by Huber (1987)
10.1557/mrs2004.236 / MRS Bull. by Hudgens (2004)
10.1063/1.348620 / J. Appl. Phys. by Yamada (1991)
10.1021/jp0658804 / J. Phys. Chem. C by Sun (2007)
10.1038/nnano.2007.291 / Nat. Nanotech. by Lee (2007)
10.1038/269481a0 / Nature by Couchman (1977)
10.1126/science.256.5062.1425 / Science by Goldstein (1992)

Dates

Type	When
Created	17 years, 9 months ago (Nov. 14, 2007, 12:59 p.m.)
Deposited	6 years, 7 months ago (Jan. 2, 2019, 7:57 p.m.)
Indexed	1 year, 10 months ago (Oct. 23, 2023, noon)
Issued	17 years, 3 months ago (May 1, 2008)
Published	17 years, 3 months ago (May 1, 2008)
Published Print	17 years, 3 months ago (May 1, 2008)

Funders 0

None

BibTeX

@article{Lee_2008, title={Comparative study of memory-switching phenomena in phase change GeTe and Ge2Sb2Te5 nanowire devices}, volume={40}, ISSN={1386-9477}, url={http://dx.doi.org/10.1016/j.physe.2007.09.171}, DOI={10.1016/j.physe.2007.09.171}, number={7}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Lee, Se-Ho and Jung, Yeonwoong and Chung, Hee-Suk and Jennings, Andrew T. and Agarwal, Ritesh}, year={2008}, month=may, pages={2474–2480} }

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