DOI: 10.1016/j.orgel.2016.03.019. Optimization of graphene-MoS2 barristor by 3-aminopropyltriethoxysilane (APTES)

Optimization of graphene-MoS2 barristor by 3-aminopropyltriethoxysilane (APTES)

10.1016/j.orgel.2016.03.019

Crossref journal-article

Elsevier BV

Organic Electronics (78)

Bibliography

Shim, J., & Park, J.-H. (2016). Optimization of graphene-MoS2 barristor by 3-aminopropyltriethoxysilane (APTES). Organic Electronics, 33, 172â177.

Authors 2

Jaewoo Shim (first)
Jin-Hong Park (additional)

References 21 Referenced 16

10.1103/PhysRevLett.101.096802 / Phys. Rev. Lett. / Temperature-dependent transport in suspended graphene by Bolotin (2008)
10.1021/nl0731872 / Nano Lett. / Superior thermal conductivity of single-layer graphene by Balandin (2007)
10.1038/nnano.2010.132 / Nat. Nanotechnol. / Roll-to-roll production of 30-inch graphene films for transparent electrodes by Bae (2010)
10.1103/PhysRevB.80.193411 / Phys. Rev. B / Optical transparency of graphene as determined by the fine-structure constant by Sheehy (2009)
10.1126/science.1218461 / Science / Field-effect tunneling transistor based on vertical graphene heterostructures by Britnell (2012)
10.1038/nmat3518 / Nat. Mater / Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters by Yu (2013)
10.1063/1.4926973 / Appl. Phys. Lett. / Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface by Sata (2015)
10.1038/nnano.2012.224 / Nat. Nanotechol. by Georgiou (2013)
10.1038/nchem.1421 / Nat. Chem. / Understanding and controlling the substrate effect on graphene electron-transfer chemistry via reactivity imprint lithography by Wang (2012)
10.1021/jp202273a / J. Phys. Chem. C / Effect of charge puddles and ripples on the chemical reactivity of single layer graphene supported by SiO2/Si substrate by Fan (2011)
10.1038/nphys781 / Nat. Phys. / Observation of electron-hole puddles in graphene using a scanning single-electron transistor by Martin (2008)
10.1021/nl203733r / Nano Lett. / Graphene annealing: how clean can it be? by Lin (2012)
10.1038/nnano.2010.172 / Nat. Nanotechol. / Boron nitride substrates for high-quality graphene electronics by Dean (2010)
10.3109/10242422.2010.531712 / Biocatal. Biotrans. / Formation, topography and reactivity of Candida antarctica lipase B immobilized on silicon surface by Miletic (2010)
10.1039/C5RA08136J / RSC Adv. / Stable and reversible doping of graphene by using KNO3 solution and photo-desorption current response by Khan (2015)
10.1021/nl901572a / Nano Lett. / Tuning the graphene work function by electric field effect by Yu (2009)
10.1063/1.4852615 / Appl. Phys. Lett. / Doping mechanisms in graphene-MoS2 hybrids by Sachs (2013)
{'key': '10.1016/j.orgel.2016.03.019_bib18', 'first-page': '100', 'article-title': 'High performance multilayer MoS2 transistors with scandium contacts', 'volume': '13', 'author': 'Das', 'year': '2013'} / High performance multilayer MoS2 transistors with scandium contacts by Das (2013)
10.1021/nl403142v / Nano Lett. / Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics by Heo (2013)
10.1021/acsnano.5b02616 / ACS Nano / Graphene/pentacene barristor with ion-gel gate dielectric: flexible ambipolar transistor with high mobility and On/Off ratio by Oh (2015)
10.1038/nchem.1421 / Nat. Chem. / Understanding and controlling the substrate effect on graphene lectron-transfer chemistry via reactivity imprint lithography by Wang (2012)

Dates

Type	When
Created	9 years, 5 months ago (March 24, 2016, 5:18 a.m.)
Deposited	3 years, 1 month ago (July 13, 2022, 6:21 p.m.)
Indexed	2 months, 2 weeks ago (June 10, 2025, 3:48 a.m.)
Issued	9 years, 2 months ago (June 1, 2016)
Published	9 years, 2 months ago (June 1, 2016)
Published Print	9 years, 2 months ago (June 1, 2016)

Funders 4

Korea Institute of Energy Technology Evaluation and Planning 10.13039/501100007053
Region: Asia
gov (National government)
Labels1
1. KETEP
Ministry of Trade, Industry and Energy 10.13039/501100003052
Region: Asia
gov (National government)
Labels2
1. Ministry of Trade, Industry and Energy, Korea
2. MOTIE
National Research Foundation of Korea 10.13039/501100003725
Region: Asia
pri (Trusts, charities, foundations (both public and private))
Labels3
1. 한국연구재단이 창의적 연구와
2. National Research Foundation (South Korea)
3. NRF
Ministry of Education, Science and Technology 10.13039/501100004085
Region: Asia
gov (National government)
Labels2
1. Korean Ministry of Education, Science and Technology
2. MEST
Awards2
1. 2015M3A7B7045496
2. 20144030200580

BibTeX

@article{Shim_2016, title={Optimization of graphene-MoS2 barristor by 3-aminopropyltriethoxysilane (APTES)}, volume={33}, ISSN={1566-1199}, url={http://dx.doi.org/10.1016/j.orgel.2016.03.019}, DOI={10.1016/j.orgel.2016.03.019}, journal={Organic Electronics}, publisher={Elsevier BV}, author={Shim, Jaewoo and Park, Jin-Hong}, year={2016}, month=jun, pages={172–177} }

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