DOI: 10.1016/j.nimb.2009.06.094. Surface amorphization, sputter rate, and intrinsic stresses of silicon during low energy Ga+ focused-ion beam milling

Surface amorphization, sputter rate, and intrinsic stresses of silicon during low energy Ga+ focused-ion beam milling

10.1016/j.nimb.2009.06.094

Crossref journal-article

Elsevier BV

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (78)

Bibliography

Pastewka, L., Salzer, R., Graff, A., Altmann, F., & Moseler, M. (2009). Surface amorphization, sputter rate, and intrinsic stresses of silicon during low energy Ga+ focused-ion beam milling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267(18), 3072â3075.

Authors 5

Lars Pastewka (first)
Roland Salzer (additional)
Andreas Graff (additional)
Frank Altmann (additional)
Michael Moseler (additional)

References 32 Referenced 50

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{'key': '10.1016/j.nimb.2009.06.094_bib22', 'series-title': 'The Stopping and Range of Ions in Matter', 'author': 'Ziegler', 'year': '1985'} / The Stopping and Range of Ions in Matter by Ziegler (1985)
10.1063/1.432526 / J. Chem. Phys. by Adelman (1976)
B.J. Thijsse, Private communication, A simplified version of this method is described in: P.J. Steinhardt, D.R. Nelson, M. Ronchetti, Phys. Rev. B 28 (1983) 784.
{'key': '10.1016/j.nimb.2009.06.094_bib25', 'series-title': 'Computer Simulation of Liquids', 'author': 'Allen', 'year': '1989'} / Computer Simulation of Liquids by Allen (1989)
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10.1038/nmat1241 / Nat. Mater. by Hedler (2004)

Dates

Type	When
Created	16 years, 2 months ago (June 19, 2009, 12:33 a.m.)
Deposited	6 years, 8 months ago (Dec. 18, 2018, 1:27 p.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 10:48 a.m.)
Issued	15 years, 11 months ago (Sept. 1, 2009)
Published	15 years, 11 months ago (Sept. 1, 2009)
Published Print	15 years, 11 months ago (Sept. 1, 2009)

Funders 0

None

BibTeX

@article{Pastewka_2009, title={Surface amorphization, sputter rate, and intrinsic stresses of silicon during low energy Ga+ focused-ion beam milling}, volume={267}, ISSN={0168-583X}, url={http://dx.doi.org/10.1016/j.nimb.2009.06.094}, DOI={10.1016/j.nimb.2009.06.094}, number={18}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Pastewka, Lars and Salzer, Roland and Graff, Andreas and Altmann, Frank and Moseler, Michael}, year={2009}, month=sep, pages={3072–3075} }

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