DOI: 10.1016/j.mssp.2004.09.011. Application of Ru-based gate materials for CMOS technology

Application of Ru-based gate materials for CMOS technology

10.1016/j.mssp.2004.09.011

Crossref journal-article

Elsevier BV

Materials Science in Semiconductor Processing (78)

Bibliography

TËapajna, M., PÃsecËny, P., LuptÃ¡k, R., HusËekovÃ¡, K., FrÃ¶hlich, K., Harmatha, L., Hooker, J. C., Roozeboom, F., & Jergel, J. (2004). Application of Ru-based gate materials for CMOS technology. Materials Science in Semiconductor Processing, 7(4â6), 271â276.

Authors 9

M. T˘apajna (first)
P. Písec˘ny (additional)
R. Lupták (additional)
K. Hus˘eková (additional)
K. Fröhlich (additional)
L. Harmatha (additional)
J.C. Hooker (additional)
F. Roozeboom (additional)
J. Jergel (additional)

References 9 Referenced 33

International Technology Roadmap for Semiconductors, http://public.itrs.net; 2003 update.
10.1147/rd.433.0245 / IBM J Res Dev by Buchanan (1999)
10.1016/S0168-583X(01)00908-9 / Nucl Instr Meth Phys Res B by Wyon (2002)
10.1149/1.2220877 / J Electrochem Soc by Vijay (1993)
10.1116/1.1415517 / J Vac Sci Technol B by Nakahara (2000)
10.1149/1.2095391 / J Electrochem Soc by Elbaum (1988)
10.1016/S0167-9317(01)00667-0 / Microelectron Eng by Gusev (2001)
Nicollian EH, Brews JR. MOS (metal oxide semiconductor) physics and technology. New York: Wiley; 1982. p. 319.
10.1016/S0167-9317(02)00820-1 / Microelectron Eng by Ganesan (2002)

Dates

Type	When
Created	20 years, 10 months ago (Oct. 13, 2004, 9:53 a.m.)
Deposited	6 years, 6 months ago (Feb. 2, 2019, 6:28 p.m.)
Indexed	1 year, 10 months ago (Oct. 7, 2023, 11:16 a.m.)
Issued	21 years, 7 months ago (Jan. 1, 2004)
Published	21 years, 7 months ago (Jan. 1, 2004)
Published Print	21 years, 7 months ago (Jan. 1, 2004)

Funders 0

None

BibTeX

@article{T_apajna_2004, title={Application of Ru-based gate materials for CMOS technology}, volume={7}, ISSN={1369-8001}, url={http://dx.doi.org/10.1016/j.mssp.2004.09.011}, DOI={10.1016/j.mssp.2004.09.011}, number={4вҖ“6}, journal={Materials Science in Semiconductor Processing}, publisher={Elsevier BV}, author={TЛҳapajna, M. and PГӯsecЛҳny, P. and LuptГЎk, R. and HusЛҳekovГЎ, K. and FrГ¶hlich, K. and Harmatha, L. and Hooker, J.C. and Roozeboom, F. and Jergel, J.}, year={2004}, month=jan, pages={271вҖ“276} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2023,
        10,
        7
      ]
    ],
    "date-time": "2023-10-07T15:16:56Z",
    "timestamp": 1696691816825
  },
  "reference-count": 9,
  "publisher": "Elsevier BV",
  "issue": "4-6",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2004,
            1,
            1
          ]
        ],
        "date-time": "2004-01-01T00:00:00Z",
        "timestamp": 1072915200000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://www.elsevier.com/tdm/userlicense/1.0/"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        1
      ]
    ]
  },
  "DOI": "10.1016/j.mssp.2004.09.011",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        10,
        13
      ]
    ],
    "date-time": "2004-10-13T13:53:41Z",
    "timestamp": 1097675621000
  },
  "page": "271-276",
  "source": "Crossref",
  "is-referenced-by-count": 33,
  "title": "Application of Ru-based gate materials for CMOS technology",
  "prefix": "10.1016",
  "volume": "7",
  "author": [
    {
      "given": "M.",
      "family": "T\u02d8apajna",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "P.",
      "family": "P\u00edsec\u02d8ny",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "R.",
      "family": "Lupt\u00e1k",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "K.",
      "family": "Hus\u02d8ekov\u00e1",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "K.",
      "family": "Fr\u00f6hlich",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "L.",
      "family": "Harmatha",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.C.",
      "family": "Hooker",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "F.",
      "family": "Roozeboom",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.",
      "family": "Jergel",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "78",
  "reference": [
    {
      "key": "10.1016/j.mssp.2004.09.011_bib1",
      "unstructured": "International Technology Roadmap for Semiconductors, http://public.itrs.net; 2003 update."
    },
    {
      "key": "10.1016/j.mssp.2004.09.011_bib2",
      "doi-asserted-by": "crossref",
      "first-page": "245",
      "DOI": "10.1147/rd.433.0245",
      "volume": "43",
      "author": "Buchanan",
      "year": "1999",
      "journal-title": "IBM J Res Dev"
    },
    {
      "key": "10.1016/j.mssp.2004.09.011_bib3",
      "doi-asserted-by": "crossref",
      "first-page": "380",
      "DOI": "10.1016/S0168-583X(01)00908-9",
      "volume": "186",
      "author": "Wyon",
      "year": "2002",
      "journal-title": "Nucl Instr Meth Phys Res B"
    },
    {
      "key": "10.1016/j.mssp.2004.09.011_bib4",
      "doi-asserted-by": "crossref",
      "first-page": "2640",
      "DOI": "10.1149/1.2220877",
      "volume": "140",
      "author": "Vijay",
      "year": "1993",
      "journal-title": "J Electrochem Soc"
    },
    {
      "key": "10.1016/j.mssp.2004.09.011_bib5",
      "doi-asserted-by": "crossref",
      "first-page": "2133",
      "DOI": "10.1116/1.1415517",
      "volume": "19",
      "author": "Nakahara",
      "year": "2000",
      "journal-title": "J Vac Sci Technol B"
    },
    {
      "key": "10.1016/j.mssp.2004.09.011_bib6",
      "doi-asserted-by": "crossref",
      "first-page": "2610",
      "DOI": "10.1149/1.2095391",
      "volume": "135",
      "author": "Elbaum",
      "year": "1988",
      "journal-title": "J Electrochem Soc"
    },
    {
      "key": "10.1016/j.mssp.2004.09.011_bib7",
      "doi-asserted-by": "crossref",
      "first-page": "341",
      "DOI": "10.1016/S0167-9317(01)00667-0",
      "volume": "59",
      "author": "Gusev",
      "year": "2001",
      "journal-title": "Microelectron Eng"
    },
    {
      "key": "10.1016/j.mssp.2004.09.011_bib8",
      "unstructured": "Nicollian EH, Brews JR. MOS (metal oxide semiconductor) physics and technology. New York: Wiley; 1982. p. 319."
    },
    {
      "key": "10.1016/j.mssp.2004.09.011_bib9",
      "doi-asserted-by": "crossref",
      "first-page": "449",
      "DOI": "10.1016/S0167-9317(02)00820-1",
      "volume": "64",
      "author": "Ganesan",
      "year": "2002",
      "journal-title": "Microelectron Eng"
    }
  ],
  "container-title": "Materials Science in Semiconductor Processing",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.elsevier.com/content/article/PII:S1369800104000782?httpAccept=text/xml",
      "content-type": "text/xml",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://api.elsevier.com/content/article/PII:S1369800104000782?httpAccept=text/plain",
      "content-type": "text/plain",
      "content-version": "vor",
      "intended-application": "text-mining"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2019,
        2,
        2
      ]
    ],
    "date-time": "2019-02-02T23:28:35Z",
    "timestamp": 1549150115000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://linkinghub.elsevier.com/retrieve/pii/S1369800104000782"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        1
      ]
    ]
  },
  "references-count": 9,
  "journal-issue": {
    "issue": "4-6",
    "published-print": {
      "date-parts": [
        [
          2004,
          1
        ]
      ]
    }
  },
  "alternative-id": [
    "S1369800104000782"
  ],
  "URL": "http://dx.doi.org/10.1016/j.mssp.2004.09.011",
  "relation": {},
  "ISSN": [
    "1369-8001"
  ],
  "subject": [],
  "container-title-short": "Materials Science in Semiconductor Processing",
  "published": {
    "date-parts": [
      [
        2004,
        1
      ]
    ]
  }
}