DOI: 10.1016/j.mseb.2006.08.014. High performance germanium MOSFETs

10.1016/j.mseb.2006.08.014

Crossref journal-article

Elsevier BV

Materials Science and Engineering: B (78)

Bibliography

Saraswat, K., Chui, C. O., Krishnamohan, T., Kim, D., Nayfeh, A., & Pethe, A. (2006). High performance germanium MOSFETs. Materials Science and Engineering: B, 135(3), 242â249.

Authors 6

Krishna Saraswat (first)
Chi On Chui (additional)
Tejas Krishnamohan (additional)
Donghyun Kim (additional)
Ammar Nayfeh (additional)
Abhijit Pethe (additional)

References 21 Referenced 135

10.1063/1.357263 / J. Appl. Phys. by Natori (1994)
10.1109/55.596937 / IEEE Electron Device Lett. by Lundstrom (1997)
10.1109/16.974760 / IEEE Trans. Electron Devices by Lundstrom (2002)
10.1109/55.974587 / IEEE Electron Device Lett. by Lochtefeld (2001)
10.1109/55.924846 / IEEE Electron Device Lett. by Lundstrom (2001)
{'key': '10.1016/j.mseb.2006.08.014_bib6', 'first-page': '437', 'author': 'Chui', 'year': '2003', 'journal-title': 'Proc. IEEE Int. Electron Devices Meeting Tech. Digest'} / Proc. IEEE Int. Electron Devices Meeting Tech. Digest by Chui (2003)
10.1063/1.1802381 / Appl. Phys. Lett. by Nayfeh (2004)
A. Nayfeh, C. O. Chui, K. C. Saraswat and T. Yonehara, Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si, IEEE Electron Device Lett., in press.
10.1109/TED.2006.875808 / IEEE Trans. Electron Dev. by Chui (2006)
{'key': '10.1016/j.mseb.2006.08.014_bib10', 'series-title': 'Proceedings of the IEEE International Electron Development Meeting 2002 Technical Digest', 'first-page': '437', 'author': 'Chui', 'year': '2002'} / Proceedings of the IEEE International Electron Development Meeting 2002 Technical Digest by Chui (2002)
10.1109/TED.2006.875812 / IEEE Trans. Electron Dev. by Chui (2006)
10.1109/LED.2004.827285 / IEEE Electron Dev. Lett. by Chui (2004)
{'key': '10.1016/j.mseb.2006.08.014_bib13', 'series-title': 'Proceedings of the IEEE International Electron Devices Meeting (IEDM) 2003 Technical Digest', 'first-page': '687', 'author': 'Krishnamohan', 'year': '2003'} / Proceedings of the IEEE International Electron Devices Meeting (IEDM) 2003 Technical Digest by Krishnamohan (2003)
{'key': '10.1016/j.mseb.2006.08.014_bib14', 'author': 'Krishnamohan', 'year': '2005', 'journal-title': 'VLSI Technol. Symp. Kyoto'} / VLSI Technol. Symp. Kyoto by Krishnamohan (2005)
10.1109/TED.2006.872367 / IEEE Trans. Electron Dev. by Krishnamohan (2006)
10.1109/TED.2006.872362 / IEEE Trans. Electron Dev. by Krishnamohan (2006)
10.1063/1.2037861 / Appl. Phys. Lett. by Chui (2005)
10.1109/LED.2006.873767 / IEEE Electron Dev. Lett. by Martens (2006)
{'key': '10.1016/j.mseb.2006.08.014_bib19', 'series-title': 'Proceedings of the VLSI Symposium', 'author': 'Krishnamohan', 'year': '2006'} / Proceedings of the VLSI Symposium by Krishnamohan (2006)
{'key': '10.1016/j.mseb.2006.08.014_bib20', 'series-title': 'Proceedings of the IEEE International Electron Devices Meeting (IEDM) 2005 Technical Digest', 'first-page': '619', 'author': 'Pethe', 'year': '2005'} / Proceedings of the IEEE International Electron Devices Meeting (IEDM) 2005 Technical Digest by Pethe (2005)
{'key': '10.1016/j.mseb.2006.08.014_bib21', 'series-title': 'SISPAD', 'author': 'Kim', 'year': '2006'} / SISPAD by Kim (2006)

Dates

Type	When
Created	18 years, 9 months ago (Oct. 31, 2006, 3:31 p.m.)
Deposited	6 years, 7 months ago (Jan. 11, 2019, 10:28 a.m.)
Indexed	1 month, 1 week ago (July 11, 2025, 9:02 p.m.)
Issued	18 years, 8 months ago (Dec. 1, 2006)
Published	18 years, 8 months ago (Dec. 1, 2006)
Published Print	18 years, 8 months ago (Dec. 1, 2006)

Funders 0

None

BibTeX

@article{Saraswat_2006, title={High performance germanium MOSFETs}, volume={135}, ISSN={0921-5107}, url={http://dx.doi.org/10.1016/j.mseb.2006.08.014}, DOI={10.1016/j.mseb.2006.08.014}, number={3}, journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={Saraswat, Krishna and Chui, Chi On and Krishnamohan, Tejas and Kim, Donghyun and Nayfeh, Ammar and Pethe, Abhijit}, year={2006}, month=dec, pages={242–249} }

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