DOI: 10.1016/j.micron.2012.03.008. Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM

Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM

10.1016/j.micron.2012.03.008

Crossref journal-article

Elsevier BV

Micron (78)

Bibliography

Mehrtens, T., Bley, S., Venkata Satyam, P., & Rosenauer, A. (2012). Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM. Micron, 43(8), 902â909.

Authors 4

Thorsten Mehrtens (first)
Stephanie Bley (additional)
Parlapalli Venkata Satyam (additional)
Andreas Rosenauer (additional)

References 18 Referenced 25

{'key': '10.1016/j.micron.2012.03.008_bib0005', 'series-title': 'Proceedings of the 13th European Microscopy Congress', 'article-title': 'The use of low energy Ar ion milling to reduce surface damage silicon resulting from focused ion beam milling', 'author': 'Barna', 'year': '2004'} / Proceedings of the 13th European Microscopy Congress / The use of low energy Ar ion milling to reduce surface damage silicon resulting from focused ion beam milling by Barna (2004)
10.1016/S0304-3991(97)00120-4 / Ultramicroscopy / Amorphisation and surface morphology development at low-energy ion milling by Barna (1998)
10.1016/S0968-4328(99)00011-6 / Micron / TEM sample preparation by ion milling/amorphization by Barna (1999)
{'key': '10.1016/j.micron.2012.03.008_bib0020', 'series-title': 'Materials Research Society Symposium Proceedings, vol. 199', 'first-page': '189', 'article-title': 'A procedure for cross sectioning specific semiconductor devices for both SEM and TEM analysis', 'author': 'Benedict', 'year': '1990'} / Materials Research Society Symposium Proceedings, vol. 199 / A procedure for cross sectioning specific semiconductor devices for both SEM and TEM analysis by Benedict (1990)
10.1016/S0968-4328(99)00005-0 / Micron / A review of focused ion beam milling techniques for TEM specimen preparation by Giannuzzi (1999)
{'key': '10.1016/j.micron.2012.03.008_bib0030', 'first-page': '1', 'article-title': 'Fabrication of a TEM sample of ion-irradiated material using focused ion beam microprocessing and low-energy Ar ion milling', 'author': 'Jin', 'year': '2010', 'journal-title': 'Journal of Electron Microscopy'} / Journal of Electron Microscopy / Fabrication of a TEM sample of ion-irradiated material using focused ion beam microprocessing and low-energy Ar ion milling by Jin (2010)
10.1016/j.physb.2005.12.136 / Physica B / Time, energy, and spatially resolved TEM investigations of defects in InGaN by Jinschek (2006)
10.1016/j.ultramic.2006.09.004 / Ultramicroscopy / Effective removal of Ga residue from focused ion beam using a plasma cleaner by Ko (2007)
10.1016/j.ultramic.2008.07.001 / Ultramicroscopy / Experimental quantification of annular dark-field images in scanning transmission electron microscopy by LeBeau (2008)
10.1016/j.matchar.2005.12.007 / Materials Characterization / Recent advances in FIB-TEM specimen preparation techniques by Li (2006)
Nebiker, P.W., 1997. Strukturierung von Silizium mit niederenergetischen fokussierten Ionenstrahlen. Ph.D. thesis. Eidgenössische Technische Hochschule Zürich.
10.1093/jmicro/dfm034 / Journal of Electron Microscopy / Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis by Okuno (2008)
10.1016/j.ultramic.2009.05.003 / Ultramicroscopy / Measurement of specimen thickness and composition in AlxGa1−xN/GaN using high-angle annular dark field images by Rosenauer (2009)
10.1016/j.ultramic.2011.04.009 / Ultramicroscopy / Composition mapping in InGaN by scanning transmission electron microscopy by Rosenauer (2011)
10.1088/1742-6596/26/1/053 / Journal of Physics: Conference Series / Sample preparation for nanoanalytical electron microscopy using the FIB lift-out method and low energy ion milling by Scott (2006)
10.1016/j.sna.2003.11.036 / Sensors and Actuators A: Physical / Fast etching of silicon with a smooth surface in high temperature ranges near the boiling point of KOH solution by Tanaka (2004)
10.1016/j.ultramic.2003.12.001 / Ultramicroscopy / Role of surface amorphous film in high-resolution high-angle annular dark field STEM imaging by Yamazaki (2004)
{'key': '10.1016/j.micron.2012.03.008_bib0090', 'series-title': 'The Stopping and Range of Ions in Solids', 'author': 'Ziegler', 'year': '1985'} / The Stopping and Range of Ions in Solids by Ziegler (1985)

Dates

Type	When
Created	13 years, 5 months ago (March 20, 2012, 4:45 a.m.)
Deposited	6 years, 9 months ago (Nov. 24, 2018, 5:24 p.m.)
Indexed	1 month, 1 week ago (July 26, 2025, 5:07 a.m.)
Issued	13 years, 1 month ago (Aug. 1, 2012)
Published	13 years, 1 month ago (Aug. 1, 2012)
Published Print	13 years, 1 month ago (Aug. 1, 2012)

Funders 0

None

BibTeX

@article{Mehrtens_2012, title={Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM}, volume={43}, ISSN={0968-4328}, url={http://dx.doi.org/10.1016/j.micron.2012.03.008}, DOI={10.1016/j.micron.2012.03.008}, number={8}, journal={Micron}, publisher={Elsevier BV}, author={Mehrtens, Thorsten and Bley, Stephanie and Venkata Satyam, Parlapalli and Rosenauer, Andreas}, year={2012}, month=aug, pages={902–909} }

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