Crossref
journal-article
Elsevier BV
Micron (78)
References
29
Referenced
105
10.1063/1.1590741
/ Applied Physics Letters / Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface by Baikalov (2003)10.1063/1.126902
/ Applied Physics Letters / Reproducible switching effect in thin oxide films for memory applications by Beck (2000)10.1016/0022-1902(64)80038-5
/ Journal of Inorganic & Nuclear Chemistry / Mixed oxides of the type MO2 (fluorite)–M2O3. 1. Oxygen dissociation pressures and phase relationships in the system CeO2–Ce2O3 at high temperatures by Bevan (1964)10.1016/j.ultramic.2008.05.015
/ Ultramicroscopy / In situ environmental TEM studies of dynamic changes in cerium-based oxides nanoparticles during redox processes by Crozier (2008)10.1103/PhysRevB.71.045305
/ Physical Review B / Giant resistance switching in metal–insulator–manganite junctions: evidence for Mott transition by Fors (2005)10.1063/1.1845598
/ Applied Physics Letters / Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 by Fujii (2005)10.1016/S0022-3697(99)00218-8
/ Journal of Physics and Chemistry of Solids / Determination of Ce4+/Ce3+ in electron-beam-damaged CeO2 by electron energy-loss spectroscopy by Garvie (1999)10.1063/1.2193328
/ Applied Physics Letters / Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films by Hamaguchi (2006)10.1002/adma.200602915
/ Advanced Materials / Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory by Janousch (2007)10.1073/pnas.0702748104
/ Proceedings of the National Academy of Sciences of the United States of America / Polaron melting and ordering as key mechanisms for colossal resistance effects in manganites by Jooss (2007)10.1016/0038-1098(83)90550-1
/ Solid State Commun. / The electronic-structure of CeO2 and PrO2 by Koelling (1983)10.1063/1.126464
/ Applied Physics Letters / Electric-pulse-induced reversible resistance change effect in magnetoresistive films by Liu (2000)10.1103/PhysRevLett.98.146403
/ Physical Review Letters / Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides by Nian (2007)10.1103/PhysRevLett.95.266403
/ Physical Review Letters / Interfaces of correlated electron systems: proposed mechanism for colossal electroresistance by Oka (2005)10.1016/0925-8388(96)02293-1
/ Journal of Alloys and Compounds / Periodicity in the band gap variation of Ln(2)X(3) (X=O, S, Se) in the lanthanide series by Prokofiev (1996)10.1103/PhysRevLett.98.116601
/ Physical Review Letters / Mechanism of electric-pulse-induced resistance switching in manganites by Quintero (2007)10.1103/PhysRevLett.92.178302
/ Physical Review Letters / Nonvolatile memory with multilevel switching: a basic model by Rozenberg (2004)10.1063/1.1812580
/ Applied Physics Letters / Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface by Sawa (2004)10.1088/0022-3727/40/17/054
/ Journal of Physics D: Applied Physics / Asymmetric fatigue and its endurance improvement in resistance switching of Ag–La0.7Ca0.3MnO3–Pt heterostructures by Shang (2007)10.1080/14786430410001671467
/ Philosophical Magazine / Observation of dynamic nanostructural and nanochemical changes in ceria-based catalysts during in-situ reduction by Sharma (2004)10.1103/PhysRevLett.89.166601
/ Physical Review Letters / Quantum origin of the oxygen storage capability of ceria by Skorodumova (2002)10.1038/nmat1614
/ Nature Materials / Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 by Szot (2006)10.1080/01614949608006464
/ Catalysis Reviews: Science and Engineering / Catalytic properties of ceria and CeO2-containing materials by Trovarelli (1996)10.1063/1.2349312
/ Applied Physics Letters / Mechanism and scalability in resistive switching of metal–Pr0.7Ca0.3MnO3 interface by Tsui (2006){'key': '10.1016/j.micron.2009.11.010_bib25', 'series-title': 'Functional and Smart Materials: Structural Evolution and Structure Analysis', 'author': 'Wang', 'year': '1998'}
/ Functional and Smart Materials: Structural Evolution and Structure Analysis by Wang (1998)10.1038/nmat2023
/ Nature Materials / Nanoionics-based resistive switching memories by Waser (2007)10.1038/nnano.2008.160
/ Nature Nanotechnology / Memristive switching mechanism for metal/oxide/metal nanodevices by Yang (2008)10.1088/0957-4484/20/21/215201
/ Nanotechnology / The mechanism of electroforming of metal oxide memristive switches by Yang (2009)10.1063/1.2966141
/ Applied Physics Letters / Direct observation of oxygen movement during resistance switching in NiO/Pt film by Yoshida (2008)
Dates
Type | When |
---|---|
Created | 15 years, 8 months ago (Dec. 7, 2009, 9:44 a.m.) |
Deposited | 6 years, 8 months ago (Dec. 14, 2018, 2:50 p.m.) |
Indexed | 4 months, 2 weeks ago (April 10, 2025, 4:27 p.m.) |
Issued | 15 years, 2 months ago (June 1, 2010) |
Published | 15 years, 2 months ago (June 1, 2010) |
Published Print | 15 years, 2 months ago (June 1, 2010) |
@article{Gao_2010, title={In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides}, volume={41}, ISSN={0968-4328}, url={http://dx.doi.org/10.1016/j.micron.2009.11.010}, DOI={10.1016/j.micron.2009.11.010}, number={4}, journal={Micron}, publisher={Elsevier BV}, author={Gao, Peng and Wang, Zhenzhong and Fu, Wangyang and Liao, Zhaoliang and Liu, Kaihui and Wang, Wenlong and Bai, Xuedong and Wang, Enge}, year={2010}, month=jun, pages={301–305} }