Crossref
journal-article
Elsevier BV
Micron (78)
References
19
Referenced
28
10.1063/1.93643
/ Appl. Phys. Lett. / Characterisation of damage in ion implanted Ge by Appleton (1982)- FIB Workstation User's Guide, 1996.
10.1063/1.332385
/ J. Appl. Phys. / Ion implantation damage and annealing in germanium by Holland (1983){'key': '10.1016/j.micron.2004.03.004_BIB4', 'first-page': '501', 'article-title': 'Cross-sectional transmission electron microscopy of precisely selected regions from semiconductor devices', 'volume': '100', 'author': 'Kirk', 'year': '1989', 'journal-title': 'Inst. Phys. Conf. Ser.'}
/ Inst. Phys. Conf. Ser. / Cross-sectional transmission electron microscopy of precisely selected regions from semiconductor devices by Kirk (1989)10.1557/PROC-523-03
/ Mater. Res. Soc. Symp. Proc. / Transmission electron microscopy of semiconductor based products by Mardinly (1998)10.1557/PROC-199-271
/ Mater. Res. Soc. Proc. / Cross-sectional TEM specimen preparation of semiconductor devices by focused ion beam etching by Park (1990)- Rubanov S. 2002, PhD Thesis, University of New South Wales.
10.1023/A:1010950201525
/ J. Mater. Sci. Lett. / Investigation of the structure of damage layers in TEM samples prepared using a FIB by Rubanov (2001)10.1016/S0167-577X(02)01202-8
/ Mater. Lett. / The effect of the Au sputter coating films in minimising damage in FIB-produced TEM specimens by Rubanov (2003)10.1111/j.0022-2720.2004.01327.x
/ J Micros / FIB-induced damage in dilicon by Rubanov (2004){'key': '10.1016/j.micron.2004.03.004_BIB11', 'article-title': 'Damage in III–V compounds during focused ion beam milling', 'author': 'Rubanov', 'year': '2004', 'journal-title': 'Ultramicroscopy'}
/ Ultramicroscopy / Damage in III–V compounds during focused ion beam milling by Rubanov (2004)10.1116/1.588033
/ J. Vaccine Sci. Technol. B / Focused ion-beam line profiles: a study of some factors affecting beam broadening by Templeton (1995)10.1016/S0968-4328(99)00008-6
/ Micron / Microfabrication techniques using focused ion beams and emergent applications by Vasile (1999){'key': '10.1016/j.micron.2004.03.004_BIB15', 'first-page': '667', 'volume': 'CP449', 'author': 'Venables', 'year': '1998', 'journal-title': 'AIP Conf. Proc.'}
/ AIP Conf. Proc. by Venables (1998)10.1063/1.331636
/ J. Appl. Phys. / The effects of self-ion bombardment (30–500 keV) on the surface topography of single-crystal germanium by Wilson (1982)10.1063/1.102009
/ Appl. Phys. Lett. / Radiation-induced formation of cavities in amorphous germanium by Wang (1989)10.1557/PROC-199-205
/ Mater. Res. Soc. Proc. / Fabrication of planar and cross-sectional TEM specimens using a focused ion beam by Young (1990){'key': '10.1016/j.micron.2004.03.004_BIB19', 'article-title': 'Formation of self-organized nanostructures on Ge during focused ion beam sputtering', 'volume': '13', 'author': 'Zhou', 'year': '2004', 'journal-title': 'Proc. Micros. Semiconducting Mater.'}
/ Proc. Micros. Semiconducting Mater. / Formation of self-organized nanostructures on Ge during focused ion beam sputtering by Zhou (2004)- Ziegler J.; 2000, see: www.SRIM.org.
Dates
Type | When |
---|---|
Created | 21 years, 4 months ago (April 21, 2004, 8:59 a.m.) |
Deposited | 6 years, 6 months ago (Feb. 10, 2019, 7:27 a.m.) |
Indexed | 5 months ago (March 19, 2025, 11:35 a.m.) |
Issued | 20 years, 10 months ago (Oct. 1, 2004) |
Published | 20 years, 10 months ago (Oct. 1, 2004) |
Published Print | 20 years, 10 months ago (Oct. 1, 2004) |
@article{Rubanov_2004, title={The application of FIB milling for specimen preparation from crystalline germanium}, volume={35}, ISSN={0968-4328}, url={http://dx.doi.org/10.1016/j.micron.2004.03.004}, DOI={10.1016/j.micron.2004.03.004}, number={7}, journal={Micron}, publisher={Elsevier BV}, author={Rubanov, S and Munroe, P.R}, year={2004}, month=oct, pages={549–556} }