DOI: 10.1016/j.mee.2009.03.085. Unified mechanisms for structural relaxation and crystallization in phase-change memory devices

Unified mechanisms for structural relaxation and crystallization in phase-change memory devices

10.1016/j.mee.2009.03.085

Crossref journal-article

Elsevier BV

Microelectronic Engineering (78)

Bibliography

Ielmini, D., Boniardi, M., Lacaita, A. L., Redaelli, A., & Pirovano, A. (2009). Unified mechanisms for structural relaxation and crystallization in phase-change memory devices. Microelectronic Engineering, 86(7â9), 1942â1945.

Authors 5

D. Ielmini (first)
M. Boniardi (additional)
A.L. Lacaita (additional)
A. Redaelli (additional)
A. Pirovano (additional)

References 22 Referenced 36

10.1063/1.1351868 / J. Appl. Phys. by Weidenhof (2001)
10.1063/1.1503166 / J. Appl. Phys. by Ruitenberg (2002)
10.1109/TED.2006.885527 / IEEE Trans. Electron Dev. by Russo (2006)
10.1109/TED.2007.904976 / IEEE Trans. Electron Dev. by Russo (2007)
10.1103/PhysRevB.43.4057 / Phys. Rev. B by Crandall (1991)
10.1103/PhysRevB.44.3702 / Phys. Rev. B by Roorda (1991)
{'key': '10.1016/j.mee.2009.03.085_bib7', 'first-page': '939', 'author': 'Ielmini', 'year': '2007', 'journal-title': 'IEDM Tech. Dig.'} / IEDM Tech. Dig. by Ielmini (2007)
10.1109/TED.2004.825805 / IEEE Trans. Electron Dev. by Pirovano (2004)
10.1109/TED.2009.2016397 / IEEE Trans. Electron Dev. by Ielmini (2009)
{'key': '10.1016/j.mee.2009.03.085_bib10', 'first-page': '102', 'author': 'Karpov', 'year': '2007', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. by Karpov (2007)
10.1109/TED.2006.885525 / IEEE Trans. Electron Dev. by Redaelli (2006)
10.1063/1.2930680 / Appl. Phys. Lett. by Ielmini (2008)
{'key': '10.1016/j.mee.2009.03.085_bib13', 'first-page': '588', 'volume': '12', 'author': 'Meyer', 'year': '1937', 'journal-title': 'Z. Tech. Phys.'} / Z. Tech. Phys. by Meyer (1937)
{'key': '10.1016/j.mee.2009.03.085_bib14', 'first-page': '46', 'author': 'Yelon', 'year': '1992', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B by Yelon (1992)
10.1103/PhysRevB.43.4057 / Phys. Rev. B by Crandall (1991)
10.1007/s10853-006-1065-9 / J. Mater. Sci. by Mehta (2007)
10.1016/j.cap.2008.07.013 / Curr. Appl. Phy. by Kumar Singh (2009)
10.1103/PhysRevB.38.3595 / Phys. Rev. B by Jackson (1988)
10.1063/1.1469666 / J. Appl. Phys. by Widenhorn (2002)
{'key': '10.1016/j.mee.2009.03.085_bib20', 'volume': '1072', 'author': 'Savranski', 'year': '2008', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. by Savranski (2008)
10.1109/TDMR.2004.836724 / IEEE Trans. Dev. Mat. Reliability by Pirovano (2004)
10.1038/nnano.2007.291 / Nat. Nanotechnol. by Lee (2007)

Dates

Type	When
Created	16 years, 5 months ago (March 19, 2009, 7:45 a.m.)
Deposited	6 years, 3 months ago (May 18, 2019, 7:30 p.m.)
Indexed	3 months ago (May 21, 2025, 2:11 a.m.)
Issued	16 years, 1 month ago (July 1, 2009)
Published	16 years, 1 month ago (July 1, 2009)
Published Print	16 years, 1 month ago (July 1, 2009)

Funders 0

None

BibTeX

@article{Ielmini_2009, title={Unified mechanisms for structural relaxation and crystallization in phase-change memory devices}, volume={86}, ISSN={0167-9317}, url={http://dx.doi.org/10.1016/j.mee.2009.03.085}, DOI={10.1016/j.mee.2009.03.085}, number={7–9}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Ielmini, D. and Boniardi, M. and Lacaita, A.L. and Redaelli, A. and Pirovano, A.}, year={2009}, month=jul, pages={1942–1945} }

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