DOI: 10.1016/j.mee.2008.08.004. Phase change materials and their application to random access memory technology

Phase change materials and their application to random access memory technology

10.1016/j.mee.2008.08.004

Crossref journal-article

Elsevier BV

Microelectronic Engineering (78)

Bibliography

Raoux, S., Shelby, R. M., Jordan-Sweet, J., Munoz, B., Salinga, M., Chen, Y.-C., Shih, Y.-H., Lai, E.-K., & Lee, M.-H. (2008). Phase change materials and their application to random access memory technology. Microelectronic Engineering, 85(12), 2330â2333.

Authors 9

Simone Raoux (first)
Robert M. Shelby (additional)
Jean Jordan-Sweet (additional)
Becky Munoz (additional)
Martin Salinga (additional)
Yi-Chou Chen (additional)
Yen-Hao Shih (additional)
Erh-Kun Lai (additional)
Ming-Hsiu Lee (additional)

References 28 Referenced 141

10.1063/1.373041 / J. Appl. Phys. by Friedrich (2000)
10.1143/JJAP.39.745 / Jpn. J. Appl. Phys. by Seo (2000)
10.1143/JJAP.39.2775 / Jpn. J. Appl. Phys. by Jeong (2000)
10.1063/1.2801000 / J. Appl. Phys. by Raoux (2007)
10.1038/nmat1350 / Nature Mater. by Lankhorst (2005)
{'key': '10.1016/j.mee.2008.08.004_bib6', 'first-page': '777', 'author': 'Chen', 'year': '2006', 'journal-title': 'IEDM Technical Digest'} / IEDM Technical Digest by Chen (2006)
10.1103/PhysRevLett.21.1450 / Phys. Rev. B by Ovshinsky (1968)
10.1063/1.348620 / J. Appl. Phys. by Yamada (1991)
B.-S. Lee, S. Raoux, R. Shelby, C.T. Rettner, G.W. Burr, S. Bogle, S.G. Bishop, J.R. Abelson, in: European Phase Change and Ovonics Science Symposium, Zermatt, Switzerland, September 2007.
10.1016/S0022-3093(01)01034-1 / J. Non-Cryst. Solids by Lankhorst (2002)
10.1016/S0925-8388(98)00839-1 / J. Alloy Compd. by Bahari (1999)
10.1143/JJAP.42.L404 / Jpn. J. Appl. Phys. by Kojima (2003)
10.1103/PhysRevB.8.4746 / Phys. Rev. B by Seager (1973)
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10.1007/BF02655632 / J. Electron. Mater. by Holmberg (1979)
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10.1021/jp0658804 / J. Phys. Chem. C by Sun (2007)
10.1063/1.2801000 / J. Appl. Phys. by Raoux (2007)
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10.1063/1.362548 / J. Appl. Phys. by Ohshima (1996)
10.1143/JJAP.46.2211 / Jpn. J. Appl. Phys. by Wei (2007)
10.1063/1.2938076 / J. Appl. Phys. by Raoux (2008)
D. Krebs, S. Raoux, C.T. Rettner, R.M. Shelby, G.W. Burr, M. Wutttig, in: MRS Spring Meeting, San Francisco, April 2008.
S. Lai, in: International Electron Devices Meeting, Washington, DC, December 2003.
10.1063/1.2784169 / Appl. Phys. Lett. by Reifenberg (2007)
10.1364/AO.39.002347 / Appl. Optics by Peng (2000)
10.1063/1.2359354 / Appl. Phys. Lett. by Lyeo (2006)

Dates

Type	When
Created	16 years, 11 months ago (Sept. 1, 2008, 5:27 a.m.)
Deposited	6 years, 3 months ago (May 13, 2019, 3:03 p.m.)
Indexed	1 month ago (July 16, 2025, 8:36 a.m.)
Issued	16 years, 8 months ago (Dec. 1, 2008)
Published	16 years, 8 months ago (Dec. 1, 2008)
Published Print	16 years, 8 months ago (Dec. 1, 2008)

Funders 0

None

BibTeX

@article{Raoux_2008, title={Phase change materials and their application to random access memory technology}, volume={85}, ISSN={0167-9317}, url={http://dx.doi.org/10.1016/j.mee.2008.08.004}, DOI={10.1016/j.mee.2008.08.004}, number={12}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Raoux, Simone and Shelby, Robert M. and Jordan-Sweet, Jean and Munoz, Becky and Salinga, Martin and Chen, Yi-Chou and Shih, Yen-Hao and Lai, Erh-Kun and Lee, Ming-Hsiu}, year={2008}, month=dec, pages={2330–2333} }

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