Crossref
journal-article
Elsevier BV
Journal of Luminescence (78)
References
29
Referenced
32
10.1063/1.1787164
/ Appl. Phys. Lett. by Bhattacharya (2004){'key': '10.1016/j.jlumin.2005.10.007_bib2', 'first-page': '260', 'volume': '40', 'author': 'Iyer', 'year': '1993', 'journal-title': 'Science'}
/ Science by Iyer (1993)10.1007/s003390101019
/ Appl. Phys. A by Frannò (2002)10.1103/PhysRevB.48.4883
/ Phys. Rev. B by Kanemitsu (1993)10.1016/S0040-6090(98)00609-9
/ Thin Solid Films by Seifarth (1998)10.1016/S0040-6090(98)00512-4
/ Thin Solid Films by Koshizaki (1998)10.1016/S0965-9773(99)00281-0
/ Nanostruct. Mater. by Koshizaki (1999)10.1016/j.mseb.2004.06.008
/ Mater. Sci. Eng. B-Solid by Pal (2004)10.1063/1.1699471
/ Appl. Phys. Lett. by Park (2004)10.1063/1.1534909
/ J. Appl. Phys. by Manisha (2003)- L.G. Gosset, et al., Alternatives to SiO2 as gate dielectrics for future Si-based microelectronics, in: J. Morais, I.J.R. Baumvol (Eds.), Materials Research Society Workshop Series, Materials Research Society. Warrendale, 2002, p. 5.
10.1016/S0167-5729(02)00113-9
/ Surf. Sci. Rep. by Almeida (2003)10.1063/1.1781733
/ Appl. Phys. Lett. by Khriachtchev (2004)10.1063/1.1341227
/ Appl. Phys. Lett. by Khriachtchev (2001)10.1016/0038-1098(86)90513-2
/ Solid State Commun. by Campbell (1986)10.1063/1.1829789
/ J. Appl. Phys. by Chen (2005)10.1103/PhysRevB.46.15578
/ Phys. Rev. B by Takagahara (1992)10.1007/BF02385660
/ J. Mater. Sci. by Colomban (1989)10.1016/0022-3093(82)90086-2
/ J. Non-Cryst. Solids by McMillan (1982)10.1111/j.1151-2916.1992.tb07219.x
/ J. Am. Ceram. Soc. by Daniele (1992)10.1021/jp971822u
/ J. Phys. Chem. B by Kytokivi (1997){'key': '10.1016/j.jlumin.2005.10.007_bib22', 'series-title': 'Advances in Quantum Electronics', 'author': 'Schawlow', 'year': '1961'}
/ Advances in Quantum Electronics by Schawlow (1961)10.1103/PhysRev.130.2193
/ Phys. Rev. by Berreman (1963)10.1103/PhysRevLett.82.197
/ Phys. Rev. Lett. by Wolkin (1999)10.1116/1.1490389
/ J. Vac. Sci. Technol. B by Wu (2002)10.1103/PhysRevB.65.121302
/ Phys. Rev. B by Vasiliev (2002)10.1016/S0040-6090(02)01113-6
/ Thin Solid Films by Wu (2003)10.1103/PhysRevB.58.9652
/ Phys. Rev. B by Kanemitsu (1998)10.1103/PhysRevB.56.R1696
/ Phys. Rev. B by Kanemitsu (1997)
Dates
Type | When |
---|---|
Created | 19 years, 8 months ago (Dec. 6, 2005, 2:20 a.m.) |
Deposited | 6 years, 7 months ago (Jan. 20, 2019, 2:22 a.m.) |
Indexed | 1 year, 10 months ago (Oct. 16, 2023, 10:43 a.m.) |
Issued | 18 years, 10 months ago (Nov. 1, 2006) |
Published | 18 years, 10 months ago (Nov. 1, 2006) |
Published Print | 18 years, 10 months ago (Nov. 1, 2006) |
@article{Bi_2006, title={Nanocrystal and interface defects related photoluminescence in silicon-rich Al2O3 films}, volume={121}, ISSN={0022-2313}, url={http://dx.doi.org/10.1016/j.jlumin.2005.10.007}, DOI={10.1016/j.jlumin.2005.10.007}, number={1}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Bi, L. and Feng, J.Y.}, year={2006}, month=nov, pages={95–101} }