DOI: 10.1016/j.infrared.2009.05.009. Characterization of LWIR diodes on InAs/GaSb Type-II superlattice material

Characterization of LWIR diodes on InAs/GaSb Type-II superlattice material

10.1016/j.infrared.2009.05.009

Crossref journal-article

Elsevier BV

Infrared Physics & Technology (78)

Bibliography

Rhiger, D. R., Kvaas, R. E., Harris, S. F., & Hill, C. J. (2009). Characterization of LWIR diodes on InAs/GaSb Type-II superlattice material. Infrared Physics & Technology, 52(6), 304â309.

Authors 4

David R. Rhiger (first)
Robert E. Kvaas (additional)
Sean F. Harris (additional)
Cory J. Hill (additional)

References 13 Referenced 23

10.1117/12.606621 / Proc. SPIE / Type-II InAs/GaInSb superlattices for infrared detection: an overview by Brown (2005)
10.1109/JQE.2008.2002667 / IEEE J. Quant. Electron. / Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs–GaSb superlattices by Delaunay (2009)
10.1063/1.2356697 / Appl. Phys. Lett. / Graded bandgap for dark current suppression in long-wave infrared W-structured type-II superlattice photodiodes by Vurgaftman (2006)
{'key': '10.1016/j.infrared.2009.05.009_bib4', 'first-page': '654201', 'article-title': 'Progress with type-II superlattice IR detector arrays', 'volume': '6542', 'author': 'Rhiger', 'year': '2007', 'journal-title': 'Proc. SPIE'} / Proc. SPIE / Progress with type-II superlattice IR detector arrays by Rhiger (2007)
10.1117/12.640084 / Proc. SPIE / Development of device fabrication process for strained layer superlattice IR detectors by Rhiger (2006)
10.1063/1.2977589 / Appl. Phys. Lett. / Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall by Herrera (2008)
D.R. Rhiger, A. Gerrish, C.J. Hill, Analysis of dark current mechanisms in LWIR InAs/GaSb superlattice diodes with comparison to HgCdTe, Presented at the 2007 US Workshop on the Physics and Chemistry of II–VI Materials, in press.
10.1149/1.2129900 / J. Electrochem. Soc. / GaAs oxidation and the Ga–As–O equilibrium phase diagram by Thurmond (1980)
10.1116/1.570694 / J. Vac. Sci. Technol. / XPS study of chemically etched GaAs and InP by Bertrand (1981)
10.1109/JRPROC.1957.278528 / Proc. IRE / Carrier generation and recombination in P–N junctions and P–N junction characteristics by Sah (1957)
10.1117/12.479548 / Proc. SPIE / Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors by Yang (2003)
10.1063/1.111325 / Appl. Phys. Lett. / Auger lifetime enhancement in InAs–Ga1−x InxSb superlattices by Youngdale (1994)
J. Pellegrino, R. DeWames, Minority carrier lifetime characteristics in Type-II InAs/GaSb LWIR superlattice n+–pi–p+ photodiodes, Proc. SPIE 7298 (2009) 72981U.

Dates

Type	When
Created	16 years, 2 months ago (June 10, 2009, 5:18 a.m.)
Deposited	6 years, 8 months ago (Dec. 18, 2018, 4:57 p.m.)
Indexed	1 month ago (July 30, 2025, 9:58 a.m.)
Issued	15 years, 10 months ago (Nov. 1, 2009)
Published	15 years, 10 months ago (Nov. 1, 2009)
Published Print	15 years, 10 months ago (Nov. 1, 2009)

Funders 0

None

BibTeX

@article{Rhiger_2009, title={Characterization of LWIR diodes on InAs/GaSb Type-II superlattice material}, volume={52}, ISSN={1350-4495}, url={http://dx.doi.org/10.1016/j.infrared.2009.05.009}, DOI={10.1016/j.infrared.2009.05.009}, number={6}, journal={Infrared Physics & Technology}, publisher={Elsevier BV}, author={Rhiger, David R. and Kvaas, Robert E. and Harris, Sean F. and Hill, Cory J.}, year={2009}, month=nov, pages={304–309} }

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