Crossref journal-article
Elsevier BV
Infrared Physics & Technology (78)
Bibliography

Rogalski, A., & Martyniuk, P. (2006). InAs/GaInSb superlattices as a promising material system for third generation infrared detectors. Infrared Physics & Technology, 48(1), 39–52.

Authors 2
  1. A. Rogalski (first)
  2. P. Martyniuk (additional)
References 35 Referenced 118
  1. 10.1117/12.354568 / Proc. SPIE / Infrared detectors in the next millennium by Norton (1999)
  2. 10.1117/12.409861 / Proc. SPIE / Third-generation infrared imagers by Norton (2000)
  3. {'key': '10.1016/j.infrared.2005.01.003_bib3', 'first-page': '283', 'article-title': 'Device physics and focal plane applications of QWIP and MCT', 'volume': '7', 'author': 'Tidrow', 'year': '1999', 'journal-title': 'Opto-Electron. Rev.'} / Opto-Electron. Rev. / Device physics and focal plane applications of QWIP and MCT by Tidrow (1999)
  4. {'key': '10.1016/j.infrared.2005.01.003_bib4', 'series-title': 'Handbook of Infrared Detection Technologies', 'first-page': '83', 'article-title': 'GaAs/AlGaAs based quantum well infrared photodetector focal plane arrays', 'author': 'Gunapala', 'year': '2002'} / Handbook of Infrared Detection Technologies / GaAs/AlGaAs based quantum well infrared photodetector focal plane arrays by Gunapala (2002)
  5. 10.1063/1.1558224 / J. Appl. Phys. / Quantum well photoconductors in infrared detectors technology by Rogalski (2003)
  6. R. Thom, High density infrared detector arrays, US Patent No. 4,039,833, 8/2/77.
  7. 10.1117/12.945014 / Proc. SPIE / Photovoltaic CdHgTe-silicon hybrid focal planes by Baker (1984)
  8. 10.1117/12.352991 / Proc. SPIE / Third generation imaging sensor system concepts by Reago (1999)
  9. {'key': '10.1016/j.infrared.2005.01.003_bib9', 'first-page': '159', 'article-title': 'HgCdTe infrared detectors', 'volume': '10', 'author': 'Norton', 'year': '2002', 'journal-title': 'Opto-Electron. Rev.'} / Opto-Electron. Rev. / HgCdTe infrared detectors by Norton (2002)
  10. {'key': '10.1016/j.infrared.2005.01.003_bib10', 'series-title': 'Handbook of Optics', 'article-title': 'Infrared detector arrays', 'author': 'Kozlowski', 'year': '1995'} / Handbook of Optics / Infrared detector arrays by Kozlowski (1995)
  11. 10.1117/12.354532 / Proc. SPIE / 2048×2048 HgCdTe focal plane arrays for astronomy applications by Vural (1999)
  12. 10.1063/1.354252 / J. Appl. Phys. / Quantum-well infrared photodetectors by Levine (1993)
  13. 10.1016/S1350-4495(03)00163-4 / Infrared Phys. Technol. / QWIP or other alternatives for third generation infrared systems by Sarusi (2003)
  14. 10.1117/12.501269 / Proc. SPIE / Challenges for third-generation cooled imagers by Horn (2003)
  15. {'key': '10.1016/j.infrared.2005.01.003_bib15', 'series-title': 'Handbook of Infrared Detection and Technologies', 'first-page': '159', 'article-title': 'InAs/(GaIn)Sb superlattices: a promising material system for infrared detection', 'author': 'Bürkle', 'year': '2002'} / Handbook of Infrared Detection and Technologies / InAs/(GaIn)Sb superlattices: a promising material system for infrared detection by Bürkle (2002)
  16. 10.1117/12.483916 / Proc. SPIE / Recent advances in InAs/GaSb superlattices for very long wavelength infrared detection by Brown (2003)
  17. 10.1063/1.339468 / J. Appl. Phys. / Proposal for strained type II superlattice infrared detectors by Smith (1987)
  18. 10.1116/1.576201 / J. Vac. Sci. Technol. / Long-wavelength infrared detectors based on strained InAs–GaInSb type-II superlattices by Mailhiot (1989)
  19. {'key': '10.1016/j.infrared.2005.01.003_bib19', 'series-title': 'Wave Mechanics Applied to Semiconductor Heterostructures', 'author': 'Bastard', 'year': '1988'} / Wave Mechanics Applied to Semiconductor Heterostructures by Bastard (1988)
  20. 10.1063/1.108219 / Appl. Phys. Lett. / Determination of band gap and effective masses in InAs/Ga1−xInxSb superlattices by Omaggio (1992)
  21. 10.1016/0038-1101(94)90389-1 / Solid State Electron. / Electron transport in InAs/Ga1−xInxSb superlattices by Hoffman (1994)
  22. 10.1063/1.108480 / Appl. Phys. Lett. / Minority carrier lifetimes in ideal InGaSb/InAs superlattice by Grein (1992)
  23. 10.1063/1.360422 / J. Appl. Phys. / Long wavelength InAs/InGaSb infrared detectors: optimization of carrier lifetimes by Grein (1995)
  24. 10.1063/1.111325 / Appl. Phys. Lett. / Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices by Youngdale (1994)
  25. 10.1117/12.479548 / Proc. SPIE / Trap centers and minority carrier lifetimes in InAs/GaInSb superlattice long wavelength photodetectors by Yang (2003)
  26. 10.1063/1.363043 / J. Appl. Phys. / Comment on “Temperature limits on infrared detectivities of InAs/InxGa1−xSb superlattices and bulk HgxCd1−xTe,” [J. Appl. Phys. 74, 4774 (1993)]” by Piotrowski (1996)
  27. 10.1016/S1350-4495(96)00030-8 / Infrared Phys. Technol. / Ultimate performance of infrared photodetectors and figure of merit of detector material by Piotrowski (1997)
  28. 10.1063/1.363044 / J. Appl. Phys. / Reply to “Comment on “Temperature limits on infrared detectivities of InAs/InxGa1−xSb superlattices and bulk HgxCd1−xTe,” [J. Appl. Phys. 80, 2542 (1996)]” by Ehrenreich (1996)
  29. 10.1063/1.112626 / Appl. Phys. Lett. / Theoretical performance of very long wavelength InAs/InxGa1−xSb superlattice based infrared detectors by Grein (1994)
  30. 10.1063/1.362849 / J. Appl. Phys. / Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb by Johnson (1996)
  31. 10.1117/12.382111 / Proc. SPIE / The InAs/GaInSb strained layer superlattice as an infrared detector material: an overview by Johnson (2000)
  32. 10.1016/j.tsf.2003.09.002 / Thin Solid Films / Passivation of type II InAsGaSb superlattice photodiodes by Gin (2004)
  33. 10.1117/12.429404 / Proc. SPIE / Optoelectronic properties of photodiodes for the mid- and far-infrared based on the InAs/GaSb/AlSb materials family by Fuchs (2001)
  34. 10.1016/S0169-4332(97)00490-X / Appl. Surf. Sci. / Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials by Young (1998)
  35. M. Münzberg, W. Cabanski, W. Rode, J. Wendler, J. Ziegler, K. Eberhardt, H. Schneider, M. Walther, 3rd gen focal plane array IR detection modules and applications, http://flexfiles.stimme.net/aim-ir.com/admin/_upl_/Datein_fuer_Archiv/irs2004_1.pdf. (10.1117/12.605818)
Dates
Type When
Created 20 years, 2 months ago (June 2, 2005, 7:35 a.m.)
Deposited 5 years, 4 months ago (April 7, 2020, 10:53 a.m.)
Indexed 4 weeks, 2 days ago (July 30, 2025, 11:38 a.m.)
Issued 19 years, 4 months ago (April 1, 2006)
Published 19 years, 4 months ago (April 1, 2006)
Published Print 19 years, 4 months ago (April 1, 2006)
Funders 0

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@article{Rogalski_2006, title={InAs/GaInSb superlattices as a promising material system for third generation infrared detectors}, volume={48}, ISSN={1350-4495}, url={http://dx.doi.org/10.1016/j.infrared.2005.01.003}, DOI={10.1016/j.infrared.2005.01.003}, number={1}, journal={Infrared Physics & Technology}, publisher={Elsevier BV}, author={Rogalski, A. and Martyniuk, P.}, year={2006}, month=apr, pages={39–52} }