DOI: 10.1016/j.elecom.2015.03.017. Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique has strong influence upon their capacitance

Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique has strong influence upon their capacitance

10.1016/j.elecom.2015.03.017

Crossref journal-article

Elsevier BV

Electrochemistry Communications (78)

Bibliography

Mayorga-Martinez, C. C., Ambrosi, A., Eng, A. Y. S., Sofer, Z., & Pumera, M. (2015). Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique has strong influence upon their capacitance. Electrochemistry Communications, 56, 24â28.

Authors 5

Carmen C. Mayorga-Martinez (first)
Adriano Ambrosi (additional)
Alex Yong Sheng Eng (additional)
Zdeněk Sofer (additional)
Martin Pumera (additional)

References 20 Referenced 146

10.1039/C4TA00652F / J. Mater. Chem. A / Layered transition metal dichalcogenides for electrochemical energy generation and storage by Pumera (2014)
10.1038/nchem.1589 / Nat. Chem. / The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets by Chhowalla (2013)
10.1038/nnano.2012.193 / Nat. Nanotechnol. / Electronics and optoelectronics of two-dimensional transition metal dichalcogenides by Wang (2012)
10.1021/nl400687n / Nano Lett. / Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces by Lee (2013)
10.1126/science.1194975 / Science / Two-dimensional nanosheets produced by liquid exfoliation of layered materials by Coleman (2011)
10.1021/am403663f / ACS Appl. Mater. Interfaces / Supercapacitor electrodes based on layered tungsten disulfide reduced graphene oxide hybrids synthesized by a facile hydrothermal method by Ratha Ch (2013)
10.1103/PhysRevB.71.184509 / Phys. Rev. B / Nodal liquid and s-wave superconductivity in transition metal dichalcogenides by Uchoa (2005)
10.1063/1.2407388 / J. Appl. Phys. / Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides by Ayari (2007)
10.1103/PhysRevB.85.033305 / Phys. Rev. B / Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te) by Yun (2012)
10.1021/nn503832j / ACS Nano / Electrochemistry of transition metal dichalcogenides: strong dependence on the metal-to-chalcogen composition and exfoliation method by Eng (2014)
10.1002/smll.201400401 / Small / Lithium intercalation compound dramatically influences the electrochemical properties of exfoliated MoS2 by Ambrosi (2015)
10.1021/ic50155a005 / Inorg. Chem. / Convenient preparation and physical properties of lithium intercalation compounds of group 4b and 5b layered transition metal dichalcogenides by Murphy (1976)
10.1016/0025-5408(86)90011-5 / Mater. Res. Bull. / Single-layer MoS2 by Joensen (1986)
10.1021/jz400507t / J. Phys. Chem. Lett. / Enhanced electrocatalytic properties of transition-metal dichalcogenides sheets by spontaneous gold nanoparticle decoration by Kim (2013)
10.1016/j.elecom.2014.10.018 / Electrochem. Commun. / Exfoliated transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2): an electrochemical impedance spectroscopic investigation by Loo (2015)
10.1021/ja207176c / J. Am. Chem. Soc. / Metallic few-layered vs2 ultrathin nanosheets: high two-dimensional conductivity for in-plane supercapacitors by Feng (2011)
10.1002/anie.201405325 / Angew. Chem. Int. Ed. / Fabrication of ultralong hybrid microfibers from nanosheets of reduced graphene oxide and transition-metal dichalcogenides and their application as supercapacitors by Sun (2014)
10.1016/j.elecom.2011.09.013 / Electrochem. Commun. / Graphene materials preparation methods have dramatic influence upon their capacitance by Buglione (2012)
10.1002/cplu.201100016 / ChemPlusChem / Gold nanospacers greatly enhance the capacitance of electrochemically reduced graphene by Buglione (2012)
10.1002/cssc.201400013 / ChemSusChem / Capacitance of p- and n-doped graphenes is dominated by structural defects regardless of the dopant type by Ambrosi (2014)

Dates

Type	When
Created	10 years, 4 months ago (April 5, 2015, 9:51 p.m.)
Deposited	1 year, 2 months ago (June 8, 2024, 2:30 a.m.)
Indexed	3 weeks ago (Aug. 6, 2025, 9:23 a.m.)
Issued	10 years, 1 month ago (July 1, 2015)
Published	10 years, 1 month ago (July 1, 2015)
Published Print	10 years, 1 month ago (July 1, 2015)

Funders 3

Ministry of Education, Singapore 10.13039/501100001459 Ministry of Education - Singapore
Region: Asia
gov (National government)
Labels5
1. Ministry of Education
2. Ministry of Education (Singapore)
3. MOE Singapore
4. Ministry of Education, Singapore
5. MOE
Awards1
1. MOE2013-T2-1-056
Czech Science Foundation 10.13039/501100001824 Grantová Agentura České Republiky
Region: Europe
pri (Trusts, charities, foundations (both public and private))
Labels9
1. Grant Agency of the Czech Republic
2. Czech Science Foundation
3. Grantová agentura ČR
4. Grantové agentury
5. GrantovaAgentura
6. GAČR
7. GACR
8. GA ČR
9. GA CR
Awards1
1. 15-09001S
Specific university research
Awards1
1. 20/20151

BibTeX

@article{Mayorga_Martinez_2015, title={Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique has strong influence upon their capacitance}, volume={56}, ISSN={1388-2481}, url={http://dx.doi.org/10.1016/j.elecom.2015.03.017}, DOI={10.1016/j.elecom.2015.03.017}, journal={Electrochemistry Communications}, publisher={Elsevier BV}, author={Mayorga-Martinez, Carmen C. and Ambrosi, Adriano and Eng, Alex Yong Sheng and Sofer, Zdeněk and Pumera, Martin}, year={2015}, month=jul, pages={24–28} }

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