DOI: 10.1016/j.ceramint.2015.10.033. Impurity-induced ferromagnetism and metallicity of WS2 monolayer

Impurity-induced ferromagnetism and metallicity of WS2 monolayer

10.1016/j.ceramint.2015.10.033

Crossref journal-article

Elsevier BV

Ceramics International (78)

Bibliography

Li, H., Liu, S., Huang, S., Yin, D., Li, C., & Wang, Z. (2016). Impurity-induced ferromagnetism and metallicity of WS2 monolayer. Ceramics International, 42(2), 2364â2369.

Authors 6

Hongping Li (first)
Shuai Liu (additional)
Songlei Huang (additional)
Deqiang Yin (additional)
Changsheng Li (additional)
Zhongchang Wang (additional)

References 25 Referenced 29

10.1103/PhysRevLett.105.136805 / Phys. Rev. Lett. / Atomically thin MoS2: a new direct-gap semiconductor by Mak (2010)
10.1021/nl903868w / Nano Lett. / Emerging photoluminescence in monolayer MoS2 by Splendiani (2010)
10.1021/nn305275h / ACS Nano / Evolution of electronic structure in atomically thin sheets of WS2 and WSe2 by Zhao (2013)
10.1021/nl301702r / Nano Lett. / High-performance single layered WSe2 p-FETs with chemically doped contacts by Fang (2012)
10.1021/nl3026357 / Nano Lett. / Extraordinary room-temperature photoluminescence in triangular WS2 monolayers by Gutiérrez (2013)
10.1038/nnano.2014.26 / Nat. Nanotech. / Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions by Ross (2014)
10.1021/nn5004327 / ACS Nano / Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange by Ma (2014)
10.1021/nn401420h / ACS Nano / Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys by Chen (2013)
10.1063/1.4908256 / Appl. Phys. Lett. / Monolayers of WxMo1−xS2 alloy heterostructure with in-plane composition variations by Zheng (2015)
10.1063/1.4834358 / Appl. Phys. Lett. / Two-dimensional semiconductor alloys: monolayer Mo1−xWxSe2 by Tongay (2014)
10.1063/1.4891495 / J. Appl. Phys. / Charge and magnetic states of Mn-, Fe-, and Co-doped monolayer MoS2 by Lin (2014)
10.1103/PhysRevB.87.195201 / Phys. Rev. B / Mn-doped monolayer MoS2: an atomically thin dilute magnetic semiconductor by Ramasubramaniam (2013)
10.1039/C4CP00247D / Phys. Chem. Chem. Phys. / Unexpected strong magnetism of Cu doped single-layer MoS2 and its origin by Yun (2014)
10.1103/PhysRevB.87.100401 / Phys. Rev. B / Prediction of two-dimensional diluted magnetic semiconductors: doped monolayer MoS2 systems by Cheng (2013)
10.1103/PhysRevB.88.075420 / Phys. Rev. B / Possible doping strategies for MoS2 monolayers: an ab initio study by Dolui (2013)
10.1016/j.commatsci.2015.05.021 / Comput. Mater. Sci. / Electronic structures and magnetic properties in nonmetallic element substituted MoS2 monolayer by Hu (2015)
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10.1103/PhysRevB.50.17953 / Phys. Rev. B / Projector augmented-wave method by Blöchl (1994)
10.1103/PhysRevB.59.1758 / Phys. Rev. B / From ultrasoft pseudopotentials to the projector augmented-wave method by Kresse (1999)
10.1103/PhysRevB.54.11169 / Phys. Rev. B / Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set by Kresse (1996)
10.1016/0927-0256(96)00008-0 / Comput. Mater. Sci. / Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set by Kresse (1996)
10.1103/PhysRevLett.77.3865 / Phys. Rev. Lett. / Generalized gradient approximation made simple by Perdew (1996)
10.1103/PhysRevB.13.5188 / Phys. Rev. B / Special points for Brillouin-zone integrations by Monkhorst (1976)
10.1039/c1cp21159e / Phys. Chem. Chem. Phys. / Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers by Ma (2011)
10.1063/1.4774090 / Appl. Phys. Lett. / Band offsets and heterostructures of two-dimensional semiconductors by Kang (2013)

Dates

Type	When
Created	9 years, 9 months ago (Oct. 24, 2015, 10:32 p.m.)
Deposited	5 years, 3 months ago (May 15, 2020, 9:06 p.m.)
Indexed	2 hours, 2 minutes ago (Aug. 23, 2025, 9:38 p.m.)
Issued	9 years, 6 months ago (Feb. 1, 2016)
Published	9 years, 6 months ago (Feb. 1, 2016)
Published Print	9 years, 6 months ago (Feb. 1, 2016)

Funders 10

National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
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1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards2
1. 21301075
2. 11332013
Scientific Research (B)
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JSPS 10.13039/501100000646 Japan Society for the Promotion of Science London
Region: Europe
pri (Universities (academic only))
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2. JSPS
CAS 10.13039/100006296 Center for Advanced Study, University of Illinois at Urbana-Champaign
Region: Americas
gov (Universities (academic only))
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2. The Center for Advanced Study at Illinois
3. University of Illinois at Urbana-Champaign Center for Advanced Study
4. CAS
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Shorai Foundation for Science and Technology 10.13039/501100008668
Specialized Research Fund for Doctoral Program of Higher Education
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1. 20133227120003
Open Project of State Key Laboratory of Rare Earth Resources Utilization
Changchun Institute of Applied Chemistry 10.13039/501100002838 Changchun Institute of Applied Chemistry, Chinese Academy of Sciences
Region: Asia
gov (Research institutes and centers)
Labels3
1. Changchun Institute of Applied Chemistry
2. 中国科学院长春应用化学研究所
3. CIAC
Research Foundation for Advanced Talents of Jiangsu University
Awards1
1. 12JDG096

BibTeX

@article{Li_2016, title={Impurity-induced ferromagnetism and metallicity of WS2 monolayer}, volume={42}, ISSN={0272-8842}, url={http://dx.doi.org/10.1016/j.ceramint.2015.10.033}, DOI={10.1016/j.ceramint.2015.10.033}, number={2}, journal={Ceramics International}, publisher={Elsevier BV}, author={Li, Hongping and Liu, Shuai and Huang, Songlei and Yin, Deqiang and Li, Changsheng and Wang, Zhongchang}, year={2016}, month=feb, pages={2364–2369} }

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  "ISSN": [
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  "container-title-short": "Ceramics International",
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        2016,
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