DOI: 10.1016/s1369-8001(03)00068-4. Modeling the impact of stress on silicon processes and devices

Modeling the impact of stress on silicon processes and devices

10.1016/s1369-8001(03)00068-4

Crossref journal-article

Elsevier BV

Materials Science in Semiconductor Processing (78)

Bibliography

Moroz, V., Strecker, N., Xu, X., Smith, L., & Bork, I. (2003). Modeling the impact of stress on silicon processes and devices. Materials Science in Semiconductor Processing, 6(1â3), 27â36.

Authors 5

Victor Moroz (first)
Norbert Strecker (additional)
Xiaopeng Xu (additional)
Lee Smith (additional)
Ingo Bork (additional)

References 16 Referenced 42

{'key': '10.1016/S1369-8001(03)00068-4_BIB1', 'first-page': '783', 'volume': '61', 'author': 'Hu', 'year': '1992', 'journal-title': 'Appl Phys'} / Appl Phys by Hu (1992)
Taurus Users Manual. Synopsys Inc, 2002.
10.1063/1.1713945 / J Appl Phys by Deal (1965)
Massoud HZ. Thermal oxidation of silicon in dry oxygen—growth kinetics and charge characterization in the thin regime. Technical Report, Stanford Electronics Laboratories, Stanford University, Stanford, CA, June 1983.
10.1109/16.491248 / IEEE Trans Electron Dev by Senez (1996)
{'key': '10.1016/S1369-8001(03)00068-4_BIB6', 'first-page': '65', 'volume': '1', 'author': 'Garikipati', 'year': '2000', 'journal-title': 'Comput Model Eng Sci'} / Comput Model Eng Sci by Garikipati (2000)
{'key': '10.1016/S1369-8001(03)00068-4_BIB7', 'first-page': 'W851', 'volume': '731', 'author': 'Xu', 'year': '2001', 'journal-title': 'Mater Res Soc Symp Proc'} / Mater Res Soc Symp Proc by Xu (2001)
{'key': '10.1016/S1369-8001(03)00068-4_BIB8', 'series-title': 'Level set methods', 'author': 'Sethian', 'year': '1996'} / Level set methods by Sethian (1996)
Moroz V, et al. In: Proceedings of the 31st European Solid State Device Research Conference, 2001. p. 371–4. (10.1109/ESSDERC.2001.195278)
10.1103/PhysRevLett.72.2585 / Phys Rev Lett by Cowern (1994)
10.1103/PhysRevLett.71.883 / Phys Rev Lett by Moriya (1993)
10.1063/1.1332803 / J Appl Phys by Rajendran (2001)
10.1063/1.363052 / J Appl Phys by Fischetti (1996)
{'key': '10.1016/S1369-8001(03)00068-4_BIB14', 'series-title': 'Symmetry and strain-induced effects in semiconductors', 'author': 'Bir', 'year': '1974'} / Symmetry and strain-induced effects in semiconductors by Bir (1974)
10.1016/0038-1101(93)90210-H / Solid-State Electron by Egley (1993)
Oldiges P, et al. SISPAD 2001 Proceedings, 2001. p. 292. (10.1007/978-3-7091-6244-6_65)

Dates

Type	When
Created	22 years, 1 month ago (July 16, 2003, 12:19 p.m.)
Deposited	5 years, 5 months ago (March 24, 2020, 2:25 p.m.)
Indexed	1 month, 4 weeks ago (July 1, 2025, 9:31 a.m.)
Issued	22 years, 6 months ago (Feb. 1, 2003)
Published	22 years, 6 months ago (Feb. 1, 2003)
Published Print	22 years, 6 months ago (Feb. 1, 2003)

Funders 0

None

BibTeX

@article{Moroz_2003, title={Modeling the impact of stress on silicon processes and devices}, volume={6}, ISSN={1369-8001}, url={http://dx.doi.org/10.1016/s1369-8001(03)00068-4}, DOI={10.1016/s1369-8001(03)00068-4}, number={1–3}, journal={Materials Science in Semiconductor Processing}, publisher={Elsevier BV}, author={Moroz, Victor and Strecker, Norbert and Xu, Xiaopeng and Smith, Lee and Bork, Ingo}, year={2003}, month=feb, pages={27–36} }

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