10.1016/s1359-0286(98)80080-6
Crossref journal-article
Elsevier BV
Current Opinion in Solid State and Materials Science (78)
Bibliography

Niinistö, L. (1998). Atomic layer epitaxy. Current Opinion in Solid State and Materials Science, 3(2), 147–152.

Authors 1
  1. Lauri Niinistö (first)
References 62 Referenced 63
  1. {'key': '10.1016/S1359-0286(98)80080-6_BIB1', 'first-page': '601', 'article-title': 'Atomic layer epitaxy', 'volume': '3', 'author': 'Suntola', 'year': '1994'} / Atomic layer epitaxy by Suntola (1994)
  2. {'key': '10.1016/S1359-0286(98)80080-6_BIB2', 'first-page': '1', 'article-title': 'Atomic layer epitaxy', 'author': 'Suntola', 'year': '1995'} / Atomic layer epitaxy by Suntola (1995)
  3. 10.1016/S0921-5107(96)01617-0 / Mater Sci Eng B / Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applications by Niinistö (1996)
  4. {'key': '10.1016/S1359-0286(98)80080-6_BIB4_1', 'year': '1997'} (1997)
  5. {'key': '10.1016/S1359-0286(98)80080-6_BIB5', 'article-title': 'The successive ionic layer adsorption and reaction (SILAR) growth and characterization of ZnS and ZnS:Mn thin films', 'author': 'Lindroos', 'year': '1997'} / The successive ionic layer adsorption and reaction (SILAR) growth and characterization of ZnS and ZnS:Mn thin films by Lindroos (1997)
  6. 10.1016/S0169-4332(96)00488-6 / Appl Surf Sci / Formation of the first monolayer of CdSe on Au (111) by electrochemical ALE by Lister (1996)
  7. 10.1002/cvde.19970030404 / Chem Vap Deposition / Volatile metal β-diketonates. ALE and CVD precursors for electroluminescent device thin films by Tiitta (1997)
  8. 10.1002/(SICI)1099-0712(199607)6:4<169::AID-AMO234>3.0.CO;2-7 / Adv Mater Opt Electron / Potential cerium precursors for blue color in thin film electroluminescent devices growth by atomic layer epitaxy by Leskelä (1996)
  9. 10.1021/cm9606078 / Chem Mater / [Ca(thd)2 (tetraen): a monomeric precursor for deposition of CaS thin films by Hänninen (1997)
  10. {'key': '10.1016/S1359-0286(98)80080-6_BIB10', 'first-page': '127', 'volume': '9', 'author': 'Fritsch', 'year': '1997', 'journal-title': 'Benzoylpivaloylmethanide precursors for the chemical beam epitaxy by oxide thin films. 1. Synthesis, characterization and use of yttrium benzoylpivaloylmethanide'} / Benzoylpivaloylmethanide precursors for the chemical beam epitaxy by oxide thin films. 1. Synthesis, characterization and use of yttrium benzoylpivaloylmethanide by Fritsch (1997)
  11. 10.1002/cvde.19960020208 / Chem Vap Deposition / Atomic layer epitaxy of strontium sulfide thin films using in situ synthesized strontium precursors by Soininen (1996)
  12. 10.1016/0169-4332(94)90274-7 / Appl Surf Sci / The effect of growth parameters on the deposition of CaS thin films by atomic layer epitaxy by Rautanen (1994)
  13. 10.1016/0040-6031(93)80031-5 / Thermochim Acta / Evolved gas analysis of inorganic compounds with a quadrupole mass spectrometer coupled to a thermogravimetric analyzer by Leskelä (1993)
  14. {'key': '10.1016/S1359-0286(98)80080-6_BIB14_1', 'first-page': '131', 'article-title': 'A study of surface chemical reactions in GaAs atomic layer epitaxy by in situ monitoring methods', 'author': 'Koukitu', 'year': '1997'} / A study of surface chemical reactions in GaAs atomic layer epitaxy by in situ monitoring methods by Koukitu (1997)
  15. 10.1016/S0169-4332(96)00989-0 / Appl Surf Sci / In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O by Kukli (1997)
  16. {'key': '10.1016/S1359-0286(98)80080-6_BIB16', 'first-page': '217', 'article-title': 'Surface dynamics studied using reflectance anisotropy', 'author': 'Pemble', 'year': '1997'} / Surface dynamics studied using reflectance anisotropy by Pemble (1997)
  17. 10.1016/0040-6090(93)90122-6 / Thin Solid Films / In situ monitoring and control of atomic layer epitaxy by surface photo-absorption by Kobayashi (1993)
  18. 10.1016/S0169-4332(96)00988-9 / Appl Surf Sci / In situ monitoring of hydrogen adsorption on (001) Ga surface in GaAs atomic layer epitaxy by Koukitu (1997)
  19. 10.1016/S0169-4332(96)00483-7 / Appl Surf Sci / Monitoring of atomic layer deposition by incremental dielectric reflection by Rosental (1996)
  20. 10.1016/S0169-4332(96)01003-3 / Appl Surf Sci / Atomic layer deposition in traveling-wave reactor: in situ diagnostic by optical reflection by Rosental (1997)
  21. 10.1116/1.580422 / J Vac Sci Technol A / Optical approaches to determine near-surface compositions during epitaxy by Aspnes (1996)
  22. 10.1139/p96-838 / Can J Phys (Suppl) / Determination of growth parameters for atomic layer epitaxy using reflectance difference spectroscopy by Arès (1996)
  23. 10.1016/S0169-4332(96)00975-0 / Appl Surf Sci / Molecular layer epitaxy by real-time optical process monitoring by Bachmann (1997)
  24. {'key': '10.1016/S1359-0286(98)80080-6_BIB24', 'series-title': 'Atomic Layer Epitaxy', 'year': '1994'} / Atomic Layer Epitaxy (1994)
  25. 10.1143/JJAP.36.1609 / Jpn J Appl Phys / A proposed atomic-layer deposition of germanium on Si surface by Sugahara (1997)
  26. 10.1016/S0022-0248(96)01042-1 / J Cryst Growth / Evolution of thin Si films growth on Ge(100) by synchrotron-radiation-excited atomic layer epitaxy and chemical vapor deposition from Si2H6 by Akazawa (1997)
  27. 10.1016/S0169-4332(96)01027-6 / Appl Surf Sci / Modelling of germanium atomic-layer-epitaxy by Sugahara (1997)
  28. 10.1002/cvde.19970030107 / Chem Vap Deposition / Atomic layer epitaxy of copper on tantalum by Mårtensson (1997)
  29. 10.1021/jp9536763 / J Phys Chem / Surface chemistry for atomic layer growth by George (1996)
  30. 10.1016/S0169-4332(96)00503-X / Appl Surf Sci / Atomic layer deposition of Al2O3 films using binary reaction sequence chemistry by Ott (1996)
  31. {'key': '10.1016/S1359-0286(98)80080-6_BIB31', 'first-page': '48', 'article-title': 'Soft X-ray mirrors using GeO2/TiO2 multi-layer crystals', 'volume': '28', 'author': 'Kobayshi', 'year': '1996', 'journal-title': 'Reza Kagaku Kenkyo'} / Reza Kagaku Kenkyo / Soft X-ray mirrors using GeO2/TiO2 multi-layer crystals by Kobayshi (1996)
  32. 10.1006/jcat.1996.0276 / J Catal / Surface characteristics and activity of chromia/alumina catalysts prepared by atomic layer epitaxy by Kytökivi (1996)
  33. 10.1557/PROC-426-513 / Mater Res Soc Symp Proc / ALE growth of transparent conductors by Ritala (1996)
  34. 10.1016/S0169-4332(96)01022-7 / Appl Surf Sci / Atomic layer deposition of ZnO transparent conducting oxides by Yamada (1997)
  35. 10.1143/JJAP.35.L602 / Jpn J Appl Phys Part 2 / Growth of transparent conductive oxide ZnO films by atomic layer deposition by Sang (1996)
  36. {'key': '10.1016/S1359-0286(98)80080-6_BIB36', 'first-page': '33', 'article-title': 'Comparison of ZnO films deposited by spray pyrolysis and atomic layer epitaxy', 'volume': '26', 'author': 'van Heerden', 'year': '1996', 'journal-title': 'Proc-Microsc Soc South Afr'} / Proc-Microsc Soc South Afr / Comparison of ZnO films deposited by spray pyrolysis and atomic layer epitaxy by van Heerden (1996)
  37. 10.1080/095008396180911 / Phil Mag Lett / Atomic layer growth of TiO2-II thin films by Aarik (1996)
  38. 10.1016/S0022-0248(97)00279-0 / J Cryst Growth / Effect of growth conditions on formation of TiO2-II thin films in atomic layer deposition process by Aarik (1997)
  39. 10.1016/S0169-4332(96)01004-5 / Appl Surf Sci / Advanced ALE processes of amorphous and polycrystalline films by Ritala (1997)
  40. 10.1016/S0169-4332(97)00387-5 / Appl Surf Sci / Effects of intermediate zinc pulses on properties of TiN and NbN films deposited by atomic layer epitaxy by Ritala (1997)
  41. 10.3891/acta.chem.scand.50-0862 / Acta Chem Scand / Surface models for the adsorption of a calcium β-diketonate complex on calcium sulfide by Calhorda (1996)
  42. 10.1039/a606316k / J Mater Chem / Deposition of LaNiO3 thin films in an atomic layer epitaxy reactor by Seim (1997)
  43. 10.1016/S0169-4332(96)01001-X / Appl Surf Sci / Growth of LaCoO3 thin films from β-diketonate percursors by Seim (1997)
  44. 10.1088/0953-2048/6/9/001 / Supercond Sci Technol / Chemical vapour deposition of high-Tc superconducting thin films by Leskelä (1993)
  45. 10.1016/S0169-4332(96)01005-7 / Appl Surf Sci / Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD by Yamamoto (1997)
  46. {'key': '10.1016/S1359-0286(98)80080-6_BIB46', 'first-page': '273', 'article-title': 'Present status of inorganic full-colour EL displays', 'author': 'Ono', 'year': '1996'} / Present status of inorganic full-colour EL displays by Ono (1996)
  47. {'key': '10.1016/S1359-0286(98)80080-6_BIB47', 'first-page': '278', 'article-title': 'Colour-by-white EL displays', 'author': 'Törnqvist', 'year': '1996'} / Colour-by-white EL displays by Törnqvist (1996)
  48. 10.1007/s0021663550129 / Fresenius J Anal Chem / Quantification of antimony depth profiles in Sb-doped tin dioxide thin films by Lehto (1996)
  49. 10.1016/S0169-4332(96)00984-1 / Appl Surf Sci / ALE growth of ZnS1−xSex thin films by substituting surface sulfur with elemental selenium by Ihanus (1997)
  50. 10.1016/S0167-2991(06)81839-2 / Studies Surf Sci Catal / The utilization of saturated gas-solid reactions in the preparation of heterogeneous catalysts by Haukka (1995)
  51. 10.1021/la960198u / Langmuir / Controlled formation of ZrO2 in the reaction of ZrCl4 vapor with porous silica and γ-alumina surfaces by Kytökivi (1996)
  52. 10.1021/cm960377x / Chem Mater / Modification of porous alumina membranes using Al2O3 atomic layer controlled deposition by Ott (1997)
  53. 10.1149/1.1836500 / J Electrochem Soc / Deposition of tin oxide into porous silicon by atomic layer epitaxy by Dücsö (1996)
  54. 10.1016/S0040-6090(96)09428-X / Thin Solid Films / Porous silicon host matrix for deposition by atomic layer apitaxy by Utriainen (1997)
  55. {'key': '10.1016/S1359-0286(98)80080-6_BIB55_1', 'first-page': '663', 'article-title': 'Metalorganic molecular beam epitaxy and atomic layer epitaxy of GaAs', 'volume': '16', 'author': 'Abernathy', 'year': '1996', 'journal-title': 'EMIS Datarev Ser'} / EMIS Datarev Ser / Metalorganic molecular beam epitaxy and atomic layer epitaxy of GaAs by Abernathy (1996)
  56. 10.1016/S0169-4332(96)00992-0 / Appl Surf Sci / Epitaxial deposition of GalnN and InN using the rotating susceptor ALE system by McIntosh (1997)
  57. 10.1016/S0169-4332(96)00987-7 / Appl Surf Sci / Quantum wire structures incorporating (GaAs)m (GaP)n short-period superlattice fabricated by atomic layer epitaxy by Isshiki (1997)
  58. {'key': '10.1016/S1359-0286(98)80080-6_BIB58', 'first-page': '141', 'article-title': 'Atomic layer epitaxy', 'volume': '1', 'author': 'Bedair', 'year': '1994'} / Atomic layer epitaxy by Bedair (1994)
  59. 10.1016/0169-4332(96)00306-6 / Appl Surf Sci / Surface chemistry of materials deposition at atomic layer level by Suntola (1996)
  60. 10.1016/S0022-0248(97)00198-X / J Cryst Growth / Atomic layer epitaxy of AIP and its application to X-ray multilayer mirror by Ishii (1997)
  61. 10.1016/S0040-6090(96)08890-6 / Thin Solid Films / Introducing atomic layer epitaxy for the deposition of optical thin films by Riihelä (1996)
  62. 10.1063/1.118898 / Appl Phys Lett / Titanium oxide/aluminum oxide multilayer reflectors for “water-window” wavelengths by Kumagai (1997)
Dates
Type When
Created 23 years, 1 month ago (July 25, 2002, 12:47 p.m.)
Deposited 2 years, 4 months ago (April 10, 2023, 7:59 a.m.)
Indexed 1 month, 3 weeks ago (July 8, 2025, 6:06 a.m.)
Issued 27 years, 5 months ago (April 1, 1998)
Published 27 years, 5 months ago (April 1, 1998)
Published Print 27 years, 5 months ago (April 1, 1998)
Funders 0

None

@article{Niinist__1998, title={Atomic layer epitaxy}, volume={3}, ISSN={1359-0286}, url={http://dx.doi.org/10.1016/s1359-0286(98)80080-6}, DOI={10.1016/s1359-0286(98)80080-6}, number={2}, journal={Current Opinion in Solid State and Materials Science}, publisher={Elsevier BV}, author={Niinistö, Lauri}, year={1998}, month=apr, pages={147–152} }