DOI: 10.1016/s0924-4247(97)80291-9. Writing FIB implantation and subsequent anisotropic wet chemical etching for fabrication of 3D structures in silicon

Writing FIB implantation and subsequent anisotropic wet chemical etching for fabrication of 3D structures in silicon

10.1016/s0924-4247(97)80291-9

Crossref journal-article

Elsevier BV

Sensors and Actuators A: Physical (78)

Bibliography

Schmidt, B., Bischoff, L., & Teichert, J. (1997). Writing FIB implantation and subsequent anisotropic wet chemical etching for fabrication of 3D structures in silicon. Sensors and Actuators A: Physical, 61(1â3), 369â373.

Authors 3

B. Schmidt (first)
L. Bischoff (additional)
J. Teichert (additional)

References 15 Referenced 57

{'key': '10.1016/S0924-4247(97)80291-9_bib1', 'first-page': '420', 'article-title': 'Silicon as a mechanical material', 'volume': '79', 'author': 'Peterson', 'year': '1982'} / Silicon as a mechanical material by Peterson (1982)
10.1116/1.583089 / J. Vac. Sci. Technol. / Micromachining of silicon mechanical structure by Kaminsky (1985)
{'key': '10.1016/S0924-4247(97)80291-9_bib3', 'series-title': 'Semiconductor Silicon 1973', 'first-page': '339', 'author': 'Price', 'year': '1973'} / Semiconductor Silicon 1973 by Price (1973)
10.1116/1.582675 / J. Vac. Sci. Technol. / Focused ion beam microlithography using an etch-stop process in gallium doped solicon by La Marche (1983)
10.1116/1.586708 / J. Vac. Sci. Technol. / Characteristics of gas-assisted focused ion beam etching by Young (1993)
10.1116/1.582676 / J. Vac. Sci. Technol. / High resolution patterning of silicon by selective gallium doping by Berry (1983)
10.1063/1.107179 / Appl. Phys. Lett. / Localized fabrication of Si nanostructures by focused ion beam implantation by Steckl (1992)
{'key': '10.1016/S0924-4247(97)80291-9_bib8', 'first-page': '599', 'article-title': 'Creation of 3D pattern in Si by focused Ga-ion beam and anisotropic wet chemical etching', 'volume': '279', 'author': 'Chen', 'year': '1993'} / Creation of 3D pattern in Si by focused Ga-ion beam and anisotropic wet chemical etching by Chen (1993)
10.1116/1.587473 / J. Vac. Sci. Technol. / Force probe characterization using silicon 3-D structures formed by FIB lithography by Edenfeld (1994)
{'key': '10.1016/S0924-4247(97)80291-9_bib10', 'first-page': '41', 'article-title': 'Writing FIB implantation and subsequent anisotropic wet chemical etching for fabrication of 3D structures in silicon', 'author': 'Bischoff', 'year': '1996'} / Writing FIB implantation and subsequent anisotropic wet chemical etching for fabrication of 3D structures in silicon by Bischoff (1996)
10.1116/1.587463 / J. Vac. Sci. Technol. / CoSi2 microstructures by means of a high current focused ion beam by Bischoff (1994)
{'key': '10.1016/S0924-4247(97)80291-9_bib12', 'series-title': 'Mikromechanik', 'first-page': '141', 'year': '1989'} / Mikromechanik (1989)
{'key': '10.1016/S0924-4247(97)80291-9_bib13', 'series-title': 'Radiation Effects in Semiconductors', 'first-page': '398', 'author': 'Eriksson', 'year': '1968'} / Radiation Effects in Semiconductors by Eriksson (1968)
{'key': '10.1016/S0924-4247(97)80291-9_bib14', 'first-page': '239', 'year': '1985'} (1985)
10.1116/1.584291 / J. Vac. Sci. Technol. / Thin layer p-n junction fabrication using Ga and In focused ion beam implantation by Lin (1988)

Dates

Type	When
Created	23 years ago (July 25, 2002, 8:18 p.m.)
Deposited	6 years, 4 months ago (April 16, 2019, 10:55 p.m.)
Indexed	1 year, 3 months ago (May 23, 2024, 6:34 a.m.)
Issued	28 years, 2 months ago (June 1, 1997)
Published	28 years, 2 months ago (June 1, 1997)
Published Print	28 years, 2 months ago (June 1, 1997)

Funders 0

None

BibTeX

@article{Schmidt_1997, title={Writing FIB implantation and subsequent anisotropic wet chemical etching for fabrication of 3D structures in silicon}, volume={61}, ISSN={0924-4247}, url={http://dx.doi.org/10.1016/s0924-4247(97)80291-9}, DOI={10.1016/s0924-4247(97)80291-9}, number={1–3}, journal={Sensors and Actuators A: Physical}, publisher={Elsevier BV}, author={Schmidt, B. and Bischoff, L. and Teichert, J.}, year={1997}, month=jun, pages={369–373} }

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