DOI: 10.1016/s0921-5107(96)01797-7. Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors

Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors

10.1016/s0921-5107(96)01797-7

Crossref journal-article

Elsevier BV

Materials Science and Engineering: B (78)

Bibliography

Kopanski, J. J., Marchiando, J. F., & Lowney, J. R. (1997). Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors. Materials Science and Engineering: B, 44(1â3), 46â51.

Authors 3

Joseph J. Kopanski (first)
Jay F. Marchiando (additional)
Jeremiah R. Lowney (additional)

References 14 Referenced 37

{'key': '10.1016/S0921-5107(96)01797-7_bib1', 'series-title': 'Semiconductor Characterization: Present Status and Future Needs', 'first-page': '295', 'author': 'Feenstra', 'year': '1996'} / Semiconductor Characterization: Present Status and Future Needs by Feenstra (1996)
10.1063/1.102096 / Appl. Phys. Lett. by Williams (1989)
10.1116/1.587127 / J. Vac. Sci. Technol. by Huang (1994)
10.1116/1.588455 / J. Vac. Sci. Technol. by Kopanski (1996)
10.1116/1.588487 / J. Vac. Sci. Technol. by Neubauer (1996)
The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 4300 Stevens Creek Boulevard, San Jose, CA.
{'key': '10.1016/S0921-5107(96)01797-7_bib7', 'first-page': '33', 'volume': '39', 'author': 'Clemens', 'year': '1978', 'journal-title': 'RCA Rev.'} / RCA Rev. by Clemens (1978)
{'key': '10.1016/S0921-5107(96)01797-7_bib8', 'first-page': '194', 'volume': '43', 'author': 'Palmer', 'year': '1982', 'journal-title': 'RCA Rev.'} / RCA Rev. by Palmer (1982)
10.1116/1.588489 / J. Vac. Sci. Technol. by Huang (1996)
10.1016/0038-1101(65)90046-8 / Solid State Electron. by Grove (1965)
10.1002/(SICI)1097-0207(19960330)39:6<1029::AID-NME893>3.0.CO;2-H / Intl. J. Num. Meth. Eng. by Marchiando (1996)
10.6028/jres.100.049 / J. Res. Inst. Stand. Technol. by Marchiando (1995)
{'key': '10.1016/S0921-5107(96)01797-7_bib12', 'series-title': 'Proc. Scanning Microscopy International 1996', 'author': 'Marchiando', 'year': '1996'} / Proc. Scanning Microscopy International 1996 by Marchiando (1996)
10.1116/1.587128 / J. Vac. Sci. Technol. by Tseng (1994)

Dates

Type	When
Created	23 years, 1 month ago (July 25, 2002, 4:35 p.m.)
Deposited	6 years, 4 months ago (April 21, 2019, 3:55 a.m.)
Indexed	3 months, 3 weeks ago (May 8, 2025, 5:23 a.m.)
Issued	28 years, 7 months ago (Feb. 1, 1997)
Published	28 years, 7 months ago (Feb. 1, 1997)
Published Print	28 years, 7 months ago (Feb. 1, 1997)

Funders 0

None

BibTeX

@article{Kopanski_1997, title={Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors}, volume={44}, ISSN={0921-5107}, url={http://dx.doi.org/10.1016/s0921-5107(96)01797-7}, DOI={10.1016/s0921-5107(96)01797-7}, number={1–3}, journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={Kopanski, Joseph J. and Marchiando, Jay F. and Lowney, Jeremiah R.}, year={1997}, month=feb, pages={46–51} }

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