DOI: 10.1016/s0921-5107(02)00629-3. ‘3-Dimensional’ TEM silicon-device analysis by combining plan-view and FIB sample preparation

‘3-Dimensional’ TEM silicon-device analysis by combining plan-view and FIB sample preparation

10.1016/s0921-5107(02)00629-3

Crossref journal-article

Elsevier BV

Materials Science and Engineering: B (78)

Bibliography

De Veirman, A. E. M. (2003). â3-Dimensionalâ TEM silicon-device analysis by combining plan-view and FIB sample preparation. Materials Science and Engineering: B, 102(1â3), 63â69.

Authors 1

A.E.M. De Veirman (first)

References 10 Referenced 9

{'key': '10.1016/S0921-5107(02)00629-3_BIB1', 'series-title': 'Handbook of Microscopy, Applications', 'first-page': '145', 'article-title': 'Semiconductors and semiconductor devices', 'author': 'Kolbesen', 'year': '1997'} / Handbook of Microscopy, Applications / Semiconductors and semiconductor devices by Kolbesen (1997)
10.1147/rd.362.0158 / IBM J. Res. Develop. / Stress-induced dislocations in silicon integrated circuits by Fahey (1992)
S. Morris, S. Tatti, E. Black, N. Dickson, H. Mendez, B. Schwiesow, R. Pyle, A Technique for Preparing TEM Cross-sections to a Specific Area Using the FIB, Proceedings of ISTFA, 1991, pp. 417–427.
{'key': '10.1016/S0921-5107(02)00629-3_BIB4', 'first-page': '491', 'article-title': 'Recent developments in the preparation of semiconductor device materials for the transmission electron microscopy', 'volume': '100', 'author': 'Anderson', 'year': '1989', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. / Recent developments in the preparation of semiconductor device materials for the transmission electron microscopy by Anderson (1989)
10.1557/PROC-480-19 / Mater. Res. Soc. Symp. Proc. / Focused ion beam milling and micromanipulation lift-out for site specific cross-section TEM specimen preparation by Gianuzzi (1997)
T. Ohnishi, H. Koike, T. Ishitani, S. Tomimatsu, K. Umemura, T. Kamino, A New Focused-Ion-Beam Microsampling Technique for TEM Observation of Site-specific Area's, Proceedings ISTFA, 1999, pp. 449–453. (10.31399/asm.cp.istfa1999p0449)
H. Roberts, B. Otterloo, FIB-TEM Sample preparation by In-situ Lift Out Technique, presented at EFUG 2001, www.imec.be/efug
10.1016/S0968-4328(99)00084-0 / Micron / TEM/CBED determination of strain in silicon-based submicrometric electronic devices by Armigliato (2000)
10.1149/1.2056158 / J. Electrochem. Soc. / Implantation defects below mask edges in silicon by Cerva (1993)
10.1109/16.40887 / Trans. Electron Dev. / Heterojunction bipolar transistors using Si–Ge Alloys by Iyer (1989)

Dates

Type	When
Created	22 years, 4 months ago (April 4, 2003, 9:09 p.m.)
Deposited	4 years, 2 months ago (June 5, 2021, 11:28 p.m.)
Indexed	1 year, 2 months ago (June 6, 2024, 3:16 a.m.)
Issued	21 years, 11 months ago (Sept. 1, 2003)
Published	21 years, 11 months ago (Sept. 1, 2003)
Published Print	21 years, 11 months ago (Sept. 1, 2003)

Funders 0

None

BibTeX

@article{De_Veirman_2003, title={‘3-Dimensional’ TEM silicon-device analysis by combining plan-view and FIB sample preparation}, volume={102}, ISSN={0921-5107}, url={http://dx.doi.org/10.1016/s0921-5107(02)00629-3}, DOI={10.1016/s0921-5107(02)00629-3}, number={1–3}, journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={De Veirman, A.E.M.}, year={2003}, month=sep, pages={63–69} }

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