DOI: 10.1016/s0920-2307(05)80001-5. Ion implantation for isolation of III-V semiconductors

Ion implantation for isolation of III-V semiconductors

10.1016/s0920-2307(05)80001-5

Crossref journal-article

Elsevier BV

Materials Science Reports (78)

Bibliography

Pearton, S. J. (1990). Ion implantation for isolation of III-V semiconductors. Materials Science Reports, 4(6), 313â363.

Authors 1

S.J. Pearton (first)

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Dates

Type	When
Created	20 years ago (Aug. 25, 2005, 7:29 a.m.)
Deposited	8 months ago (Jan. 3, 2025, 3:26 p.m.)
Indexed	5 months ago (April 3, 2025, 7:44 a.m.)
Issued	35 years, 8 months ago (Jan. 1, 1990)
Published	35 years, 8 months ago (Jan. 1, 1990)
Published Print	35 years, 8 months ago (Jan. 1, 1990)

Funders 0

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BibTeX

@article{Pearton_1990, title={Ion implantation for isolation of III-V semiconductors}, volume={4}, ISSN={0920-2307}, url={http://dx.doi.org/10.1016/s0920-2307(05)80001-5}, DOI={10.1016/s0920-2307(05)80001-5}, number={6}, journal={Materials Science Reports}, publisher={Elsevier BV}, author={Pearton, S.J.}, year={1990}, month=jan, pages={313–363} }

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