DOI: 10.1016/s0169-4332(96)00503-x. Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistry

Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistry

10.1016/s0169-4332(96)00503-x

Crossref journal-article

Elsevier BV

Applied Surface Science (78)

Bibliography

Ott, A. W., McCarley, K. C., Klaus, J. W., Way, J. D., & George, S. M. (1996). Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistry. Applied Surface Science, 107, 128â136.

Authors 5

A.W. Ott (first)
K.C. McCarley (additional)
J.W. Klaus (additional)
J.D. Way (additional)
S.M. George (additional)

References 39 Referenced 122

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Dates

Type	When
Created	22 years, 4 months ago (April 30, 2003, 5:18 p.m.)
Deposited	6 years, 4 months ago (April 12, 2019, 1:51 a.m.)
Indexed	1 year ago (Aug. 22, 2024, 8:44 a.m.)
Issued	28 years, 10 months ago (Nov. 1, 1996)
Published	28 years, 10 months ago (Nov. 1, 1996)
Published Print	28 years, 10 months ago (Nov. 1, 1996)

Funders 0

None

BibTeX

@article{Ott_1996, title={Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistry}, volume={107}, ISSN={0169-4332}, url={http://dx.doi.org/10.1016/s0169-4332(96)00503-x}, DOI={10.1016/s0169-4332(96)00503-x}, journal={Applied Surface Science}, publisher={Elsevier BV}, author={Ott, A.W. and McCarley, K.C. and Klaus, J.W. and Way, J.D. and George, S.M.}, year={1996}, month=nov, pages={128–136} }

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