Crossref
journal-article
Elsevier BV
Applied Surface Science (78)
References
48
Referenced
74
10.1016/S0039-6028(99)00089-8
/ Surf. Sci. by Bell (1999)10.1016/0039-6028(75)90035-7
/ Surf. Sci. by Foxon (1975)10.1063/1.106510
/ Appl. Phys. Lett. by Banse (1992)10.1063/1.109410
/ Appl. Phys. Lett. by Sasaoka (1993)10.1103/PhysRevB.54.8844
/ Phys. Rev. B by Moll (1996)10.1103/PhysRevB.62.8087
/ Phys. Rev. B by Schmidt (2000)10.1103/PhysRevLett.85.3890
/ Phys. Rev. Lett. by Lee (2000)10.1007/s003390101058
/ Appl. Phys. A by Schmidt (2002)- E.S. Penev, Ph.D. thesis, TU Berlin, 2002.
10.1103/PhysRevB.64.075307
/ Phys. Rev. B by Kumpf (2001)10.1016/S0010-4655(97)00117-3
/ Comput. Phys. Commun. by Bockstedte (1997)10.1103/PhysRevLett.77.3865
/ Phys. Rev. Lett. by Perdew (1996){'key': '10.1016/S0169-4332(03)00392-1_BIB13', 'first-page': '292', 'volume': '1', 'author': 'Foxon', 'year': '1993', 'journal-title': 'J. Vac. Sci. Technol. B'}
/ J. Vac. Sci. Technol. B by Foxon (1993)10.1103/PhysRevB.54.17638
/ Phys. Rev. B by Garreau (1996)10.1016/S0039-6028(98)00723-7
/ Surf. Sci. by McCoy (1998)10.1103/PhysRevLett.83.2989
/ Phys. Rev. Lett. by LaBella (1999)10.1016/S0039-6028(99)00608-1
/ Surf. Sci. by Ishii (1999)10.1016/0039-6028(77)90273-4
/ Surf. Sci. by Foxon (1977)10.1103/PhysRevLett.82.4886
/ Phys. Rev. Lett. by Morgan (1999)10.1103/PhysRevLett.88.036102
/ Phys. Rev. Lett. by Kratzer (2002)10.1103/PhysRevB.59.15246
/ Phys. Rev. B by Kratzer (1999)10.1103/PhysRevLett.81.633
/ Phys. Rev. Lett. by Itoh (1998)10.1016/S0022-0248(98)01280-9
/ J. Cryst. Growth by Vvedensky (1999)10.1016/S0039-6028(00)00667-1
/ Surf. Sci. by Itoh (2000)10.1007/s003390101057
/ Appl. Phys. A by Kratzer (2002)10.1103/PhysRevB.61.R10551
/ Phys. Rev. B by Bell (2000)10.1016/S0039-6028(00)01073-6
/ Surf. Sci. by Krzyzewski (2001)10.1016/S0039-6028(97)00355-5
/ Surf. Sci. by Belk (1997)10.1016/S0169-4332(97)00525-4
/ Appl. Surf. Sci. by Westwood (1998)10.1016/S1386-9477(00)00083-7
/ Physica E by Kita (2000)10.1103/PhysRevLett.58.2555
/ Phys. Rev. Lett. by Moison (1987)10.1103/PhysRevB.45.8443
/ Phys. Rev. B by Brandt (1992)10.1103/PhysRevLett.75.3485
/ Phys. Rev. Lett. by Sauvage-Simkin (1995)10.1016/S0169-4332(96)00218-8
/ Appl. Surf. Sci. by Sauvage-Simkin (1996)10.1103/PhysRevB.58.16177
/ Phys. Rev. B by Garreau (1998)10.1016/S0169-4332(98)00099-3
/ Appl. Surf. Sci. by Ohkouchi (1998)- T. Nakayama, M. Murayama, in: Proceedings of the Fourth Symposium on Atomic-Scale Surface and Interface Dynamics, Tsukuba, 2000, p. 239.
10.1103/PhysRevB.66.195312
/ Phys. Rev. B by Kita (2002)10.1103/PhysRevLett.82.4042
/ Phys. Rev. Lett. by Wang (1999)10.1103/PhysRevB.62.1897
/ Phys. Rev. B by Wang (2000)10.1103/PhysRevB.40.10481
/ Phys. Rev. B by Pashley (1989)10.1143/JJAP.39.4298
/ Jpn. J. Appl. Phys. by Wang (2000)10.1103/PhysRevLett.86.3815
/ Phys. Rev. Lett. by Geelhaar (2001){'key': '10.1016/S0169-4332(03)00392-1_BIB44', 'first-page': '129', 'volume': '52', 'author': 'Marchenko', 'year': '1980', 'journal-title': 'Sov. Phys. JETP'}
/ Sov. Phys. JETP by Marchenko (1980)-
G.-M. Rignanese, et al., Phys. Rev. B 52 (1995) 8160, Corrections to γf taking into account the change in the plane-wave basis set associated with the supercell volume change due to straining are introduced according to the scaling hypothesis.
(
10.1103/PhysRevB.52.8160
) -
B.A. Joyce, D.D. Vvedensky, in: M. Kotrla, N.I. Papanicolaou, D.D. Vvendensky, L. Wille (Eds.), Atomistic Aspects of Epitaxial Growth, Kluwer Academic Publishers, Dordrecht, 2002, p. 301.
(
10.1007/978-94-010-0391-9_24
) 10.1143/JJAP.34.L724
/ Jpn. J. Appl. Phys. by Ikoma (1995)10.1103/PhysRevB.55.R10189
/ Phys. Rev. B by Grandjean (1997)
Dates
Type | When |
---|---|
Created | 22 years, 3 months ago (May 27, 2003, 2:47 p.m.) |
Deposited | 6 years, 5 months ago (March 21, 2019, 12:30 a.m.) |
Indexed | 2 weeks ago (Aug. 20, 2025, 8:43 a.m.) |
Issued | 22 years, 3 months ago (June 1, 2003) |
Published | 22 years, 3 months ago (June 1, 2003) |
Published Print | 22 years, 3 months ago (June 1, 2003) |
@article{Kratzer_2003, title={Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations}, volume={216}, ISSN={0169-4332}, url={http://dx.doi.org/10.1016/s0169-4332(03)00392-1}, DOI={10.1016/s0169-4332(03)00392-1}, number={1–4}, journal={Applied Surface Science}, publisher={Elsevier BV}, author={Kratzer, P and Penev, E and Scheffler, M}, year={2003}, month=jun, pages={436–446} }