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Elsevier BV
Applied Surface Science (78)
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Kratzer, P., Penev, E., & Scheffler, M. (2003). Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations. Applied Surface Science, 216(1–4), 436–446.

Authors 3
  1. P Kratzer (first)
  2. E Penev (additional)
  3. M Scheffler (additional)
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Dates
Type When
Created 22 years, 3 months ago (May 27, 2003, 2:47 p.m.)
Deposited 6 years, 5 months ago (March 21, 2019, 12:30 a.m.)
Indexed 2 weeks ago (Aug. 20, 2025, 8:43 a.m.)
Issued 22 years, 3 months ago (June 1, 2003)
Published 22 years, 3 months ago (June 1, 2003)
Published Print 22 years, 3 months ago (June 1, 2003)
Funders 0

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@article{Kratzer_2003, title={Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations}, volume={216}, ISSN={0169-4332}, url={http://dx.doi.org/10.1016/s0169-4332(03)00392-1}, DOI={10.1016/s0169-4332(03)00392-1}, number={1–4}, journal={Applied Surface Science}, publisher={Elsevier BV}, author={Kratzer, P and Penev, E and Scheffler, M}, year={2003}, month=jun, pages={436–446} }