DOI: 10.1016/s0168-583x(97)00731-3. High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances

High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances

10.1016/s0168-583x(97)00731-3

Crossref journal-article

Elsevier BV

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (78)

Bibliography

Gosset, L. G., Ganem, J.-J., Trimaille, I., Rigo, S., Rochet, F., Dufour, G., Jolly, F., Stedile, F. C., & Baumvol, I. J. R. (1998). High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 136â138, 521â527.

Authors 9

L.G. Gosset (first)
J.-J. Ganem (additional)
I. Trimaille (additional)
S. Rigo (additional)
F. Rochet (additional)
G. Dufour (additional)
F. Jolly (additional)
F.C. Stedile (additional)
I.J.R. Baumvol (additional)

References 16 Referenced 13

10.1016/0168-583X(90)90772-M / Nucl. Instr. and Meth. B by Vickridge (1990)
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10.1063/1.116135 / Appl. Phys. Lett. by Ganem (1996)
10.1063/1.360036 / J. Appl. Phys. by Yao (1995)
10.1063/1.118389 / Appl. Phys. Lett. by Kumar (1997)
10.1109/16.310113 / IEEE Trans. Electron. Dev. by Okada (1994)
10.1063/1.365858 / J. Appl. Phys. by Gusev (1997)
10.1016/0029-554X(71)90100-5 / Nucl. Instr. and Meth. by Amsel (1971)
10.1002/andp.19354160705 / Ann. Phys. (Leipzig) by Bruggeman (1935)
10.1116/1.568771 / J. Vac. Sci. Technol. by Flitsch (1975)
10.1116/1.582816 / J. Vac. Sci. Technol. B by Maillot (1984)
10.1063/1.119307 / Appl. Phys. Lett. by Kamath (1997)
10.1063/1.117687 / Appl. Phys. Lett. by Lu (1996)
10.1063/1.361481 / J. Appl. Phys. by Bouvet (1996)
10.1063/1.111701 / Appl. Phys. Lett. by Bath (1994)
10.1016/0168-583X(92)96133-J / Nucl. Instr. and Meth. B by Battistig (1992)

Dates

Type	When
Created	23 years, 1 month ago (July 25, 2002, 7:04 p.m.)
Deposited	6 years, 4 months ago (April 18, 2019, 8:56 a.m.)
Indexed	1 year, 1 month ago (July 3, 2024, 2:20 p.m.)
Issued	27 years, 5 months ago (March 1, 1998)
Published	27 years, 5 months ago (March 1, 1998)
Published Print	27 years, 5 months ago (March 1, 1998)

Funders 0

None

BibTeX

@article{Gosset_1998, title={High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances}, volume={136–138}, ISSN={0168-583X}, url={http://dx.doi.org/10.1016/s0168-583x(97)00731-3}, DOI={10.1016/s0168-583x(97)00731-3}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Gosset, L.G. and Ganem, J.-J. and Trimaille, I. and Rigo, S. and Rochet, F. and Dufour, G. and Jolly, F. and Stedile, F.C. and Baumvol, I.J.R.}, year={1998}, month=mar, pages={521–527} }

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