Crossref
journal-article
Elsevier BV
Microelectronic Engineering (78)
References
3
Referenced
85
{'key': '10.1016/S0167-9317(97)00007-5_BIB1', 'first-page': '593', 'author': 'Momose', 'year': '1994', 'journal-title': 'IEDM Tech. Dig.'}
/ IEDM Tech. Dig. by Momose (1994){'key': '10.1016/S0167-9317(97)00007-5_BIB2', 'first-page': '1233', 'volume': '43', 'author': 'Momose', 'year': '1995', 'journal-title': 'IEEE Trans. on Elect. Dev.'}
/ IEEE Trans. on Elect. Dev. by Momose (1995)10.1103/PhysRevB.5.4891
/ Phys. Rev B by Stern (1972)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 25, 2002, 7:25 a.m.) |
Deposited | 6 years, 4 months ago (April 26, 2019, 10:57 p.m.) |
Indexed | 1 day, 16 hours ago (Aug. 29, 2025, 6:41 a.m.) |
Issued | 28 years, 2 months ago (June 1, 1997) |
Published | 28 years, 2 months ago (June 1, 1997) |
Published Print | 28 years, 2 months ago (June 1, 1997) |
@article{Buchanan_1997, title={Reliability and integration of ultra-thin gate dielectrics for advanced CMOS}, volume={36}, ISSN={0167-9317}, url={http://dx.doi.org/10.1016/s0167-9317(97)00007-5}, DOI={10.1016/s0167-9317(97)00007-5}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Buchanan, D.A. and Lo, S.-H.}, year={1997}, month=jun, pages={13–20} }