DOI: 10.1016/s0167-9317(96)00034-2. Approaches for patterning of aluminum

Approaches for patterning of aluminum

10.1016/s0167-9317(96)00034-2

Crossref journal-article

Elsevier BV

Microelectronic Engineering (78)

Bibliography

Frank, W. E. (1997). Approaches for patterning of aluminum. Microelectronic Engineering, 33(1â4), 85â100.

Authors 1

Wolfgan E. Frank (first)

References 67 Referenced 25

{'issue': '1', 'key': '10.1016/S0167-9317(96)00034-2_BIB1_1', 'first-page': '127', 'article-title': 'VLSI metallization using aluminum and its alloys', 'volume': '26', 'author': 'Pramanik', 'year': '1983', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / VLSI metallization using aluminum and its alloys by Pramanik (1983)
{'issue': '3', 'key': '10.1016/S0167-9317(96)00034-2_BIB1_2', 'first-page': '127', 'article-title': 'VLSI metallization using aluminum and its alloys', 'volume': '26', 'author': 'Pramanik', 'year': '1983', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / VLSI metallization using aluminum and its alloys by Pramanik (1983)
{'key': '10.1016/S0167-9317(96)00034-2_BIB2', 'series-title': 'Handbook of Multilevel Metallization for Integrated Circuits', 'year': '1993'} / Handbook of Multilevel Metallization for Integrated Circuits (1993)
10.1149/1.2221589 / J. Electrochem. Soc. / Plasma etching of aluminum metallizations for ultralarge scale integrated circuit by Riley (1993)
{'issue': '2', 'key': '10.1016/S0167-9317(96)00034-2_BIB4', 'first-page': '47', 'article-title': 'Plasma etching of aluminum for ULSI circuits', 'volume': '36', 'author': 'Riley', 'year': '1993', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Plasma etching of aluminum for ULSI circuits by Riley (1993)
{'key': '10.1016/S0167-9317(96)00034-2_BIB5', 'series-title': 'Proc. 5th Symp. on Plasma Processing (PV85-1)', 'first-page': '26', 'article-title': 'Reactive plasma-assisted etching of aluminum and aluminum alloys', 'author': 'Schwartz', 'year': '1985'} / Proc. 5th Symp. on Plasma Processing (PV85-1) / Reactive plasma-assisted etching of aluminum and aluminum alloys by Schwartz (1985)
{'issue': '1–2', 'key': '10.1016/S0167-9317(96)00034-2_BIB6', 'first-page': '145', 'article-title': 'Plasmachemisches Ätzen von Al', 'volume': '33', 'author': 'Tiller', 'year': '1984', 'journal-title': 'Wiss. Z. Friedrich-Schiller-Univ.'} / Wiss. Z. Friedrich-Schiller-Univ. / Plasmachemisches Ätzen von Al by Tiller (1984)
{'issue': '11', 'key': '10.1016/S0167-9317(96)00034-2_BIB7', 'first-page': '69', 'article-title': 'Plasma etching of aluminum: Review of process and equipment technology', 'volume': '5', 'author': 'Weiss', 'year': '1982', 'journal-title': 'Semicond. Int.'} / Semicond. Int. / Plasma etching of aluminum: Review of process and equipment technology by Weiss (1982)
{'issue': '4', 'key': '10.1016/S0167-9317(96)00034-2_BIB8', 'first-page': '160', 'article-title': 'Single wafer plasma etching: 1. Al and alloys', 'volume': '25', 'author': 'Reichelderfer', 'year': '1982', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Single wafer plasma etching: 1. Al and alloys by Reichelderfer (1982)
{'key': '10.1016/S0167-9317(96)00034-2_BIB9', 'first-page': '141', 'article-title': 'Plasma etch chemistries of aluminum and aluminum alloy films', 'volume': '2', 'author': 'Hess', 'year': '1982'} / Plasma etch chemistries of aluminum and aluminum alloy films by Hess (1982)
{'issue': '10', 'key': '10.1016/S0167-9317(96)00034-2_BIB10', 'first-page': '79', 'article-title': 'Aluminum plasma etch considerations for VLSI production', 'volume': '24', 'author': 'Kammerdiner', 'year': '1981', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Aluminum plasma etch considerations for VLSI production by Kammerdiner (1981)
{'issue': '4', 'key': '10.1016/S0167-9317(96)00034-2_BIB11', 'first-page': '189', 'article-title': 'Plasma etching of aluminum', 'volume': '24', 'author': 'Hess', 'year': '1981', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Plasma etching of aluminum by Hess (1981)
10.1016/0040-6090(92)90539-N / Thin Solid Films / Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing by Landis (1992)
10.1016/0169-4332(95)00147-6 / Appl. Surf. Sci. / Advanced metallization technology for 256 M DRAM by Kücher (1995)
{'key': '10.1016/S0167-9317(96)00034-2_BIB14', 'series-title': 'Proc. VMIC', 'first-page': '596', 'article-title': 'Dual Damascene Al wiring for 256 M DRAM', 'author': 'Licata', 'year': '1995'} / Proc. VMIC / Dual Damascene Al wiring for 256 M DRAM by Licata (1995)
10.1002/crat.2170210315 / Cryst. Res. Technol. / Dry patterning of Al and Al alloys by Sameith (1986)
10.1149/1.2123599 / J. Electrochem. Soc. / Chemical properties of polymer films formed during the etching of aluminum in CCl4 plasmas by Nagy (1982)
10.1149/1.2123597 / J. Electrochem. Soc. / The effects of mixing N2 in CCl4 on aluminum reactive ion etching by Sato (1982)
{'key': '10.1016/S0167-9317(96)00034-2_BIB18', 'series-title': 'Colloquium on Dry Etching Related to Silicon', 'first-page': '1', 'article-title': 'Plasma etching of silicon aluminum', 'author': 'Cox', 'year': '1982'} / Colloquium on Dry Etching Related to Silicon / Plasma etching of silicon aluminum by Cox (1982)
10.1149/1.2127330 / J. Electrochem. Soc. / Some problems in plasma etching of Al and AlSi alloy films by Hirobe (1981)
{'key': '10.1016/S0167-9317(96)00034-2_BIB20', 'series-title': 'Plasma Processing: Proc. Symp. on Plasma Etching and Deposition', 'first-page': '243', 'article-title': 'Frequency dependence of CCl4 etching', 'author': 'Bruce', 'year': '1981'} / Plasma Processing: Proc. Symp. on Plasma Etching and Deposition / Frequency dependence of CCl4 etching by Bruce (1981)
{'key': '10.1016/S0167-9317(96)00034-2_BIB21', 'series-title': 'Plasma Processing: Proc. Symp. on Plasma Etching and Deposition', 'first-page': '236', 'article-title': 'Aluminum plasma etching using carbon tetrachloride', 'author': 'Ranadive', 'year': '1981'} / Plasma Processing: Proc. Symp. on Plasma Etching and Deposition / Aluminum plasma etching using carbon tetrachloride by Ranadive (1981)
10.1149/1.2129789 / J. Electrochem. Soc. / Aluminum etching in carbon tetrachloride plasmas by Tokunaga (1980)
{'issue': '4', 'key': '10.1016/S0167-9317(96)00034-2_BIB23', 'first-page': '1391', 'article-title': 'Etchant for the reactive ion etch of metals', 'volume': '20', 'author': 'Hansen', 'year': '1977', 'journal-title': 'IBM Techn. Discl. Bul.'} / IBM Techn. Discl. Bul. / Etchant for the reactive ion etch of metals by Hansen (1977)
{'key': '10.1016/S0167-9317(96)00034-2_BIB24', 'first-page': '513', 'article-title': 'Plasma-assisted etching of aluminum in CCl4\ue5f8Cl2 mixtures', 'volume': '9', 'author': "d'Agostino", 'year': '1989'} / Plasma-assisted etching of aluminum in CCl4Cl2 mixtures by d'Agostino (1989)
{'issue': '1', 'key': '10.1016/S0167-9317(96)00034-2_BIB25', 'first-page': '83', 'article-title': 'The application of reactive ion etching to the definition of patterns in Al\ue5f8Si\ue5f8Cu alloy conductor layers and thick silicon oxide films', 'volume': '26', 'author': 'Chambers', 'year': '1983', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / The application of reactive ion etching to the definition of patterns in AlSiCu alloy conductor layers and thick silicon oxide films by Chambers (1983)
10.1143/JJAP.21.1412 / Jap. J. Appl. Phys. / Aluminum reactive ion etching employing CCl4 + Cl2 Mixture by Horiike (1982)
{'issue': '8', 'key': '10.1016/S0167-9317(96)00034-2_BIB27', 'first-page': '93', 'article-title': 'The reactive ion etching of Al\ue5f8Si\ue5f8Cu alloy films', 'volume': '25', 'author': 'Chambers', 'year': '1982', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / The reactive ion etching of AlSiCu alloy films by Chambers (1982)
10.1016/0167-9317(83)90009-6 / Microelectron. Eng. / Reactive sputter etching of Al in BCl3 by Lehmann (1983)
{'key': '10.1016/S0167-9317(96)00034-2_BIB29', 'series-title': 'Proc. 4th Biennial University/Government/Industry Microelectronics Symp.', 'first-page': 'X/2', 'article-title': 'Plasma etching of aluminum', 'author': 'Herndon', 'year': '1981'} / Proc. 4th Biennial University/Government/Industry Microelectronics Symp. / Plasma etching of aluminum by Herndon (1981)
{'key': '10.1016/S0167-9317(96)00034-2_BIB30', 'first-page': '385', 'article-title': 'Magnetron-enhanced reactive ion etching of Al\ue5f8(1%)Si\ue5f8(2%)Cu alloy', 'volume': '223', 'author': 'Fu', 'year': '1991'} / Magnetron-enhanced reactive ion etching of Al(1%)Si(2%)Cu alloy by Fu (1991)
10.1143/JJAP.26.1568 / Jap. J. Appl. Phys. / Radical generation mechanism and radical effect on aluminum anisotropic etching in SiCl4 reactive ion etching by Sato (1987)
{'key': '10.1016/S0167-9317(96)00034-2_BIB32', 'series-title': "ISIAT '83 and IPAT '83", 'first-page': '1521', 'article-title': 'The SiCl4 plasma analysis in reactive ion etching', 'author': 'Sato', 'year': '1983'} / ISIAT '83 and IPAT '83 / The SiCl4 plasma analysis in reactive ion etching by Sato (1983)
10.1149/1.2124045 / J. Electrochem. Soc. / Aluminum sputter etching using SiCl4 by Degenkolb (1982)
10.1116/1.571354 / J. Vac. Sci. Technol. / Reactive ion etching of aluminum using SiCl4 by Sato (1982)
{'key': '10.1016/S0167-9317(96)00034-2_BIB35', 'series-title': 'ULSI Science and Technology 1989', 'first-page': '445', 'article-title': 'Plasma etch of aluminum alloy', 'author': 'Lin', 'year': '1989'} / ULSI Science and Technology 1989 / Plasma etch of aluminum alloy by Lin (1989)
V. Grewal and B. Spuler, personal communications.
10.1063/1.104469 / Appl. Phys. Lett. / Low radio-frequency-biased electron cyclotron resonance plasma etching by Samukawa (1991)
10.1063/1.336567 / J. Appl. Phys. / Reaction of atomic and molecular chlorine with aluminum by Danner (1986)
10.1149/1.2114271 / J. Electrochem. Soc. / Ion beam-assisted etching of aluminum with chlorine by Tsou (1985)
10.1116/1.583301 / J. Vac. Sci. Technol. / Etch products from the reaction of Cl2 with Al(100) and Cu(100) and XeF2 with W(111) and Nb by Winters (1985)
{'issue': '7', 'key': '10.1016/S0167-9317(96)00034-2_BIB41', 'first-page': '93', 'article-title': 'High-rate anisotropic etching of aluminum on a single-wafer reactive ion etcher', 'volume': '36', 'author': 'Clayton', 'year': '1993', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / High-rate anisotropic etching of aluminum on a single-wafer reactive ion etcher by Clayton (1993)
{'key': '10.1016/S0167-9317(96)00034-2_BIB42', 'series-title': 'Proc. 8th Int. IEEE VLSI Multilevel Conf.', 'first-page': '298', 'article-title': 'High-density plasma etching of aluminum alloys', 'author': 'Bradley', 'year': '1991'} / Proc. 8th Int. IEEE VLSI Multilevel Conf. / High-density plasma etching of aluminum alloys by Bradley (1991)
{'key': '10.1016/S0167-9317(96)00034-2_BIB43', 'first-page': '40', 'article-title': 'Aluminum alloy interconnect etching by ECR plasma', 'volume': '47', 'author': 'Tanaka', 'year': '1991', 'journal-title': 'The Sumitomo Search'} / The Sumitomo Search / Aluminum alloy interconnect etching by ECR plasma by Tanaka (1991)
{'issue': '5', 'key': '10.1016/S0167-9317(96)00034-2_BIB44', 'first-page': '107', 'article-title': 'Electron cyclotron resonance etching of Al\ue5f8Si\ue5f8Cu', 'volume': '34', 'author': 'Hall', 'year': '1991', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Electron cyclotron resonance etching of AlSiCu by Hall (1991)
{'issue': '11', 'key': '10.1016/S0167-9317(96)00034-2_BIB45', 'first-page': '11', 'article-title': 'Plasma etching of aluminum alloys in plasmas', 'volume': '11', 'author': 'Chen', 'year': '1988', 'journal-title': 'Microelectron. Manuf. Test.'} / Microelectron. Manuf. Test. / Plasma etching of aluminum alloys in plasmas by Chen (1988)
10.1016/0167-9317(89)90025-7 / Microelectron. Eng. / Fabrication of sub-half μm patterns for MOS devices by means of X-ray lithography and plasma etching by Windbracke (1989)
{'key': '10.1016/S0167-9317(96)00034-2_BIB47', 'first-page': '55', 'article-title': 'Fabrication of 0.5 μm poly-Si and aluminum interconnections by means of X-ray lithography and plasma etching', 'volume': '923', 'author': 'Zwicker', 'year': '1988'} / Fabrication of 0.5 μm poly-Si and aluminum interconnections by means of X-ray lithography and plasma etching by Zwicker (1988)
10.1116/1.576864 / J. Vac. Sci. Technol. / Dry etching of TiN/Al(Cu)/Si for very large scale intergrated local interconnections by Hu (1990)
{'issue': '2', 'key': '10.1016/S0167-9317(96)00034-2_BIB49', 'first-page': '95', 'article-title': 'Plasma etching of aluminum alloys for submicron technologies', 'volume': '33', 'author': 'Colombo', 'year': '1990', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Plasma etching of aluminum alloys for submicron technologies by Colombo (1990)
10.1149/1.2119953 / J. Electrochem. Soc. / High rate anisotropic aluminum etching by Bruce (1983)
10.1149/1.2086376 / J. Electrochem. Soc. / Anisotropic reactive ion etching of aluminum using Cl2, BCl3 and CH4 gases by Lutze (1990)
10.1116/1.583800 / J. Vac. Sci. Technol. / Surface passivation by adding fluorocarbons and chlorofluorocarbons into an Al dry etch reactor by Maa (1987)
10.1063/1.340083 / J. Appl. Phys. / Reaction of atomic and molecular bromine with aluminum by Landauer-Keaton (1988)
10.1149/1.2221268 / J. Electrochem. Soc. / Dry etching of Al alloy films using HBr mixed gases by Fujino (1992)
10.1116/1.573361 / J. Vac. Sci. Technol. / Aluminum etching in boron tribromide plasmas by Landauer-Keaton (1985)
10.1116/1.584055 / J. Vac. Sci. Technol. / Temperature and flow effects in aluminum etching using bromine-containing plasmas by Landauer-Keaton (1988)
{'key': '10.1016/S0167-9317(96)00034-2_BIB57', 'series-title': 'Semicond. Int.', 'article-title': 'Bromine-based aluminum etching', 'author': 'Korgh', 'year': '1988'} / Semicond. Int. / Bromine-based aluminum etching by Korgh (1988)
{'key': '10.1016/S0167-9317(96)00034-2_BIB58', 'series-title': 'Proc. 1st Tegal Europe Seminar', 'first-page': '1', 'article-title': 'Al-etching in a tri-electrode, dual frequency reactor with a carbon-free gas chemistry', 'author': 'Tilenschi', 'year': '1989'} / Proc. 1st Tegal Europe Seminar / Al-etching in a tri-electrode, dual frequency reactor with a carbon-free gas chemistry by Tilenschi (1989)
10.1149/1.2095919 / J. Electrochem. Soc. / Reactive ion etching of aluminum/silicon in and mixtures by Bell (1988)
{'key': '10.1016/S0167-9317(96)00034-2_BIB60', 'series-title': 'Proc. 5th LAM European Plasma Seminar', 'article-title': 'Metal etch with hydrogen iodine chemistry', 'author': 'Frank', 'year': '1993'} / Proc. 5th LAM European Plasma Seminar / Metal etch with hydrogen iodine chemistry by Frank (1993)
{'key': '10.1016/S0167-9317(96)00034-2_BIB61', 'series-title': 'Proc. VLSI Technol. Symp.', 'first-page': '91', 'article-title': 'Metal each with HI-addition to conventional chemistry', 'author': 'Frank', 'year': '1995'} / Proc. VLSI Technol. Symp. / Metal each with HI-addition to conventional chemistry by Frank (1995)
W.E. Frank, unpublished results.
{'issue': '4', 'key': '10.1016/S0167-9317(96)00034-2_BIB63', 'first-page': '47', 'article-title': 'Emerging developments in CMP for semiconductor planarization', 'volume': '38', 'author': 'Fury', 'year': '1995', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Emerging developments in CMP for semiconductor planarization by Fury (1995)
{'issue': '10', 'key': '10.1016/S0167-9317(96)00034-2_BIB64', 'first-page': '63', 'article-title': 'Chemical-mechanical polishing of interlayer dielectric: A review', 'volume': '37', 'author': 'Ali', 'year': '1994', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Chemical-mechanical polishing of interlayer dielectric: A review by Ali (1994)
{'issue': '6', 'key': '10.1016/S0167-9317(96)00034-2_BIB65', 'first-page': '112', 'article-title': 'Chemical-mechanical wafer polishing and planarization in batch system', 'volume': '35', 'author': 'Kolenkow', 'year': '1992', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Chemical-mechanical wafer polishing and planarization in batch system by Kolenkow (1992)
{'issue': '5', 'key': '10.1016/S0167-9317(96)00034-2_BIB66', 'first-page': '87', 'article-title': 'Planarizing interlevel dielectrics by chemical-mechanical polishing', 'volume': '35', 'author': 'Sivaram', 'year': '1992', 'journal-title': 'Solid State Technol.'} / Solid State Technol. / Planarizing interlevel dielectrics by chemical-mechanical polishing by Sivaram (1992)

Dates

Type	When
Created	23 years, 1 month ago (July 25, 2002, 7:55 p.m.)
Deposited	6 years, 4 months ago (April 17, 2019, 9:30 a.m.)
Indexed	2 months, 1 week ago (June 26, 2025, 4:28 a.m.)
Issued	28 years, 8 months ago (Jan. 1, 1997)
Published	28 years, 8 months ago (Jan. 1, 1997)
Published Print	28 years, 8 months ago (Jan. 1, 1997)

Funders 0

None

BibTeX

@article{Frank_1997, title={Approaches for patterning of aluminum}, volume={33}, ISSN={0167-9317}, url={http://dx.doi.org/10.1016/s0167-9317(96)00034-2}, DOI={10.1016/s0167-9317(96)00034-2}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Frank, Wolfgan E.}, year={1997}, month=jan, pages={85–100} }

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      "author": "K\u00fccher",
      "year": "1995",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB14",
      "series-title": "Proc. VMIC",
      "first-page": "596",
      "article-title": "Dual Damascene Al wiring for 256 M DRAM",
      "author": "Licata",
      "year": "1995"
    },
    {
      "issue": "3",
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      "doi-asserted-by": "crossref",
      "first-page": "407",
      "DOI": "10.1002/crat.2170210315",
      "article-title": "Dry patterning of Al and Al alloys",
      "volume": "21",
      "author": "Sameith",
      "year": "1986",
      "journal-title": "Cryst. Res. Technol."
    },
    {
      "issue": "11",
      "key": "10.1016/S0167-9317(96)00034-2_BIB16",
      "doi-asserted-by": "crossref",
      "first-page": "2530",
      "DOI": "10.1149/1.2123599",
      "article-title": "Chemical properties of polymer films formed during the etching of aluminum in CCl4 plasmas",
      "volume": "129",
      "author": "Nagy",
      "year": "1982",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "issue": "11",
      "key": "10.1016/S0167-9317(96)00034-2_BIB17",
      "doi-asserted-by": "crossref",
      "first-page": "2522",
      "DOI": "10.1149/1.2123597",
      "article-title": "The effects of mixing N2 in CCl4 on aluminum reactive ion etching",
      "volume": "129",
      "author": "Sato",
      "year": "1982",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB18",
      "series-title": "Colloquium on Dry Etching Related to Silicon",
      "first-page": "1",
      "article-title": "Plasma etching of silicon aluminum",
      "author": "Cox",
      "year": "1982"
    },
    {
      "issue": "12",
      "key": "10.1016/S0167-9317(96)00034-2_BIB19",
      "doi-asserted-by": "crossref",
      "first-page": "2686",
      "DOI": "10.1149/1.2127330",
      "article-title": "Some problems in plasma etching of Al and Al\ue5f8Si alloy films",
      "volume": "128",
      "author": "Hirobe",
      "year": "1981",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB20",
      "series-title": "Plasma Processing: Proc. Symp. on Plasma Etching and Deposition",
      "first-page": "243",
      "article-title": "Frequency dependence of CCl4 etching",
      "author": "Bruce",
      "year": "1981"
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB21",
      "series-title": "Plasma Processing: Proc. Symp. on Plasma Etching and Deposition",
      "first-page": "236",
      "article-title": "Aluminum plasma etching using carbon tetrachloride",
      "author": "Ranadive",
      "year": "1981"
    },
    {
      "issue": "4",
      "key": "10.1016/S0167-9317(96)00034-2_BIB22",
      "doi-asserted-by": "crossref",
      "first-page": "928",
      "DOI": "10.1149/1.2129789",
      "article-title": "Aluminum etching in carbon tetrachloride plasmas",
      "volume": "127",
      "author": "Tokunaga",
      "year": "1980",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "issue": "4",
      "key": "10.1016/S0167-9317(96)00034-2_BIB23",
      "first-page": "1391",
      "article-title": "Etchant for the reactive ion etch of metals",
      "volume": "20",
      "author": "Hansen",
      "year": "1977",
      "journal-title": "IBM Techn. Discl. Bul."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB24",
      "first-page": "513",
      "article-title": "Plasma-assisted etching of aluminum in CCl4\ue5f8Cl2 mixtures",
      "volume": "9",
      "author": "d'Agostino",
      "year": "1989"
    },
    {
      "issue": "1",
      "key": "10.1016/S0167-9317(96)00034-2_BIB25",
      "first-page": "83",
      "article-title": "The application of reactive ion etching to the definition of patterns in Al\ue5f8Si\ue5f8Cu alloy conductor layers and thick silicon oxide films",
      "volume": "26",
      "author": "Chambers",
      "year": "1983",
      "journal-title": "Solid State Technol."
    },
    {
      "issue": "10",
      "key": "10.1016/S0167-9317(96)00034-2_BIB26",
      "doi-asserted-by": "crossref",
      "first-page": "1412",
      "DOI": "10.1143/JJAP.21.1412",
      "article-title": "Aluminum reactive ion etching employing CCl4 + Cl2 Mixture",
      "volume": "21",
      "author": "Horiike",
      "year": "1982",
      "journal-title": "Jap. J. Appl. Phys."
    },
    {
      "issue": "8",
      "key": "10.1016/S0167-9317(96)00034-2_BIB27",
      "first-page": "93",
      "article-title": "The reactive ion etching of Al\ue5f8Si\ue5f8Cu alloy films",
      "volume": "25",
      "author": "Chambers",
      "year": "1982",
      "journal-title": "Solid State Technol."
    },
    {
      "issue": "1",
      "key": "10.1016/S0167-9317(96)00034-2_BIB28",
      "doi-asserted-by": "crossref",
      "first-page": "3",
      "DOI": "10.1016/0167-9317(83)90009-6",
      "article-title": "Reactive sputter etching of Al in BCl3",
      "volume": "1",
      "author": "Lehmann",
      "year": "1983",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB29",
      "series-title": "Proc. 4th Biennial University/Government/Industry Microelectronics Symp.",
      "first-page": "X/2",
      "article-title": "Plasma etching of aluminum",
      "author": "Herndon",
      "year": "1981"
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB30",
      "first-page": "385",
      "article-title": "Magnetron-enhanced reactive ion etching of Al\ue5f8(1%)Si\ue5f8(2%)Cu alloy",
      "volume": "223",
      "author": "Fu",
      "year": "1991"
    },
    {
      "issue": "9",
      "key": "10.1016/S0167-9317(96)00034-2_BIB31",
      "doi-asserted-by": "crossref",
      "first-page": "1568",
      "DOI": "10.1143/JJAP.26.1568",
      "article-title": "Radical generation mechanism and radical effect on aluminum anisotropic etching in SiCl4 reactive ion etching",
      "volume": "26",
      "author": "Sato",
      "year": "1987",
      "journal-title": "Jap. J. Appl. Phys."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB32",
      "series-title": "ISIAT '83 and IPAT '83",
      "first-page": "1521",
      "article-title": "The SiCl4 plasma analysis in reactive ion etching",
      "author": "Sato",
      "year": "1983"
    },
    {
      "issue": "5",
      "key": "10.1016/S0167-9317(96)00034-2_BIB33",
      "doi-asserted-by": "crossref",
      "first-page": "1150",
      "DOI": "10.1149/1.2124045",
      "article-title": "Aluminum sputter etching using SiCl4",
      "volume": "129",
      "author": "Degenkolb",
      "year": "1982",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "issue": "2",
      "key": "10.1016/S0167-9317(96)00034-2_BIB34",
      "doi-asserted-by": "crossref",
      "first-page": "186",
      "DOI": "10.1116/1.571354",
      "article-title": "Reactive ion etching of aluminum using SiCl4",
      "volume": "20",
      "author": "Sato",
      "year": "1982",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB35",
      "series-title": "ULSI Science and Technology 1989",
      "first-page": "445",
      "article-title": "Plasma etch of aluminum alloy",
      "author": "Lin",
      "year": "1989"
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB36",
      "unstructured": "V. Grewal and B. Spuler, personal communications."
    },
    {
      "issue": "9",
      "key": "10.1016/S0167-9317(96)00034-2_BIB37",
      "doi-asserted-by": "crossref",
      "first-page": "896",
      "DOI": "10.1063/1.104469",
      "article-title": "Low radio-frequency-biased electron cyclotron resonance plasma etching",
      "volume": "58",
      "author": "Samukawa",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "issue": "3",
      "key": "10.1016/S0167-9317(96)00034-2_BIB38",
      "doi-asserted-by": "crossref",
      "first-page": "940",
      "DOI": "10.1063/1.336567",
      "article-title": "Reaction of atomic and molecular chlorine with aluminum",
      "volume": "59",
      "author": "Danner",
      "year": "1986",
      "journal-title": "J. Appl. Phys."
    },
    {
      "issue": "8",
      "key": "10.1016/S0167-9317(96)00034-2_BIB39",
      "doi-asserted-by": "crossref",
      "first-page": "2011",
      "DOI": "10.1149/1.2114271",
      "article-title": "Ion beam-assisted etching of aluminum with chlorine",
      "volume": "132",
      "author": "Tsou",
      "year": "1985",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "issue": "1",
      "key": "10.1016/S0167-9317(96)00034-2_BIB40",
      "doi-asserted-by": "crossref",
      "first-page": "9",
      "DOI": "10.1116/1.583301",
      "article-title": "Etch products from the reaction of Cl2 with Al(100) and Cu(100) and XeF2 with W(111) and Nb",
      "volume": "B3",
      "author": "Winters",
      "year": "1985",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "issue": "7",
      "key": "10.1016/S0167-9317(96)00034-2_BIB41",
      "first-page": "93",
      "article-title": "High-rate anisotropic etching of aluminum on a single-wafer reactive ion etcher",
      "volume": "36",
      "author": "Clayton",
      "year": "1993",
      "journal-title": "Solid State Technol."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB42",
      "series-title": "Proc. 8th Int. IEEE VLSI Multilevel Conf.",
      "first-page": "298",
      "article-title": "High-density plasma etching of aluminum alloys",
      "author": "Bradley",
      "year": "1991"
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB43",
      "first-page": "40",
      "article-title": "Aluminum alloy interconnect etching by ECR plasma",
      "volume": "47",
      "author": "Tanaka",
      "year": "1991",
      "journal-title": "The Sumitomo Search"
    },
    {
      "issue": "5",
      "key": "10.1016/S0167-9317(96)00034-2_BIB44",
      "first-page": "107",
      "article-title": "Electron cyclotron resonance etching of Al\ue5f8Si\ue5f8Cu",
      "volume": "34",
      "author": "Hall",
      "year": "1991",
      "journal-title": "Solid State Technol."
    },
    {
      "issue": "11",
      "key": "10.1016/S0167-9317(96)00034-2_BIB45",
      "first-page": "11",
      "article-title": "Plasma etching of aluminum alloys in plasmas",
      "volume": "11",
      "author": "Chen",
      "year": "1988",
      "journal-title": "Microelectron. Manuf. Test."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB46",
      "doi-asserted-by": "crossref",
      "first-page": "109",
      "DOI": "10.1016/0167-9317(89)90025-7",
      "article-title": "Fabrication of sub-half \u03bcm patterns for MOS devices by means of X-ray lithography and plasma etching",
      "volume": "9",
      "author": "Windbracke",
      "year": "1989",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB47",
      "first-page": "55",
      "article-title": "Fabrication of 0.5 \u03bcm poly-Si and aluminum interconnections by means of X-ray lithography and plasma etching",
      "volume": "923",
      "author": "Zwicker",
      "year": "1988"
    },
    {
      "issue": "3",
      "key": "10.1016/S0167-9317(96)00034-2_BIB48",
      "doi-asserted-by": "crossref",
      "first-page": "1498",
      "DOI": "10.1116/1.576864",
      "article-title": "Dry etching of TiN/Al(Cu)/Si for very large scale intergrated local interconnections",
      "volume": "A8",
      "author": "Hu",
      "year": "1990",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "issue": "2",
      "key": "10.1016/S0167-9317(96)00034-2_BIB49",
      "first-page": "95",
      "article-title": "Plasma etching of aluminum alloys for submicron technologies",
      "volume": "33",
      "author": "Colombo",
      "year": "1990",
      "journal-title": "Solid State Technol."
    },
    {
      "issue": "6",
      "key": "10.1016/S0167-9317(96)00034-2_BIB50",
      "doi-asserted-by": "crossref",
      "first-page": "1369",
      "DOI": "10.1149/1.2119953",
      "article-title": "High rate anisotropic aluminum etching",
      "volume": "130",
      "author": "Bruce",
      "year": "1983",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "issue": "1",
      "key": "10.1016/S0167-9317(96)00034-2_BIB51",
      "doi-asserted-by": "crossref",
      "first-page": "249",
      "DOI": "10.1149/1.2086376",
      "article-title": "Anisotropic reactive ion etching of aluminum using Cl2, BCl3 and CH4 gases",
      "volume": "137",
      "author": "Lutze",
      "year": "1990",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "issue": "3",
      "key": "10.1016/S0167-9317(96)00034-2_BIB52",
      "doi-asserted-by": "crossref",
      "first-page": "652",
      "DOI": "10.1116/1.583800",
      "article-title": "Surface passivation by adding fluorocarbons and chlorofluorocarbons into an Al dry etch reactor",
      "volume": "B5",
      "author": "Maa",
      "year": "1987",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "issue": "2",
      "key": "10.1016/S0167-9317(96)00034-2_BIB53",
      "doi-asserted-by": "crossref",
      "first-page": "533",
      "DOI": "10.1063/1.340083",
      "article-title": "Reaction of atomic and molecular bromine with aluminum",
      "volume": "63",
      "author": "Landauer-Keaton",
      "year": "1988",
      "journal-title": "J. Appl. Phys."
    },
    {
      "issue": "9",
      "key": "10.1016/S0167-9317(96)00034-2_BIB54",
      "doi-asserted-by": "crossref",
      "first-page": "2585",
      "DOI": "10.1149/1.2221268",
      "article-title": "Dry etching of Al alloy films using HBr mixed gases",
      "volume": "139",
      "author": "Fujino",
      "year": "1992",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "issue": "3",
      "key": "10.1016/S0167-9317(96)00034-2_BIB55",
      "doi-asserted-by": "crossref",
      "first-page": "962",
      "DOI": "10.1116/1.573361",
      "article-title": "Aluminum etching in boron tribromide plasmas",
      "volume": "A3",
      "author": "Landauer-Keaton",
      "year": "1985",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "issue": "1",
      "key": "10.1016/S0167-9317(96)00034-2_BIB56",
      "doi-asserted-by": "crossref",
      "first-page": "72",
      "DOI": "10.1116/1.584055",
      "article-title": "Temperature and flow effects in aluminum etching using bromine-containing plasmas",
      "volume": "B6",
      "author": "Landauer-Keaton",
      "year": "1988",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB57",
      "series-title": "Semicond. Int.",
      "article-title": "Bromine-based aluminum etching",
      "author": "Korgh",
      "year": "1988"
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB58",
      "series-title": "Proc. 1st Tegal Europe Seminar",
      "first-page": "1",
      "article-title": "Al-etching in a tri-electrode, dual frequency reactor with a carbon-free gas chemistry",
      "author": "Tilenschi",
      "year": "1989"
    },
    {
      "issue": "5",
      "key": "10.1016/S0167-9317(96)00034-2_BIB59",
      "doi-asserted-by": "crossref",
      "first-page": "1184",
      "DOI": "10.1149/1.2095919",
      "article-title": "Reactive ion etching of aluminum/silicon in and mixtures",
      "volume": "135",
      "author": "Bell",
      "year": "1988",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB60",
      "series-title": "Proc. 5th LAM European Plasma Seminar",
      "article-title": "Metal etch with hydrogen iodine chemistry",
      "author": "Frank",
      "year": "1993"
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB61",
      "series-title": "Proc. VLSI Technol. Symp.",
      "first-page": "91",
      "article-title": "Metal each with HI-addition to conventional chemistry",
      "author": "Frank",
      "year": "1995"
    },
    {
      "key": "10.1016/S0167-9317(96)00034-2_BIB62",
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    {
      "issue": "4",
      "key": "10.1016/S0167-9317(96)00034-2_BIB63",
      "first-page": "47",
      "article-title": "Emerging developments in CMP for semiconductor planarization",
      "volume": "38",
      "author": "Fury",
      "year": "1995",
      "journal-title": "Solid State Technol."
    },
    {
      "issue": "10",
      "key": "10.1016/S0167-9317(96)00034-2_BIB64",
      "first-page": "63",
      "article-title": "Chemical-mechanical polishing of interlayer dielectric: A review",
      "volume": "37",
      "author": "Ali",
      "year": "1994",
      "journal-title": "Solid State Technol."
    },
    {
      "issue": "6",
      "key": "10.1016/S0167-9317(96)00034-2_BIB65",
      "first-page": "112",
      "article-title": "Chemical-mechanical wafer polishing and planarization in batch system",
      "volume": "35",
      "author": "Kolenkow",
      "year": "1992",
      "journal-title": "Solid State Technol."
    },
    {
      "issue": "5",
      "key": "10.1016/S0167-9317(96)00034-2_BIB66",
      "first-page": "87",
      "article-title": "Planarizing interlevel dielectrics by chemical-mechanical polishing",
      "volume": "35",
      "author": "Sivaram",
      "year": "1992",
      "journal-title": "Solid State Technol."
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