DOI: 10.1016/s0167-9317(03)00291-0. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

10.1016/s0167-9317(03)00291-0

Crossref journal-article

Elsevier BV

Microelectronic Engineering (78)

Bibliography

Gusev, E. P., Cabral, C., Copel, M., DâEmic, C., & Gribelyuk, M. (2003). Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications. Microelectronic Engineering, 69(2â4), 145â151.

Authors 5

E.P. Gusev (first)
C. Cabral (additional)
M. Copel (additional)
C. D’Emic (additional)
M. Gribelyuk (additional)

References 34 Referenced 282

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{'key': '10.1016/S0167-9317(03)00291-0_BIB2', 'series-title': 'Defects in SiO2 and Related Dielectrics: Science and Technology', 'first-page': '557', 'article-title': 'Ultrathin oxide films for advanced gate dielectrics applications: recent progress and future challenges', 'author': 'Gusev', 'year': '2000'} / Defects in SiO2 and Related Dielectrics: Science and Technology / Ultrathin oxide films for advanced gate dielectrics applications: recent progress and future challenges by Gusev (2000)
10.1063/1.1385803 / J. Appl. Phys. Rev. by Green (2001)
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10.1109/55.830975 / IEEE Electron Device Lett. by Kang (2000)
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{'key': '10.1016/S0167-9317(03)00291-0_BIB11', 'series-title': 'Rapid Thermal and Other Short-Time Technologies III', 'first-page': '177', 'article-title': 'Nucleation and growth of ALD HfO2 and ZrO2 films and the effects of post-deposition annealing on electrical properties', 'author': 'Green', 'year': '2002'} / Rapid Thermal and Other Short-Time Technologies III / Nucleation and growth of ALD HfO2 and ZrO2 films and the effects of post-deposition annealing on electrical properties by Green (2002)
{'key': '10.1016/S0167-9317(03)00291-0_BIB12', 'series-title': 'IEDM Technical Digest', 'first-page': '451', 'author': 'Gusev', 'year': '2001'} / IEDM Technical Digest by Gusev (2001)
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10.1063/1.1494123 / Appl. Phys. Lett. by Kang (2002)
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Dates

Type	When
Created	22 years, 2 months ago (June 21, 2003, 12:32 a.m.)
Deposited	6 years, 5 months ago (March 19, 2019, 1:50 a.m.)
Indexed	1 week, 5 days ago (Aug. 12, 2025, 6:21 p.m.)
Issued	21 years, 11 months ago (Sept. 1, 2003)
Published	21 years, 11 months ago (Sept. 1, 2003)
Published Print	21 years, 11 months ago (Sept. 1, 2003)

Funders 0

None

BibTeX

@article{Gusev_2003, title={Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications}, volume={69}, ISSN={0167-9317}, url={http://dx.doi.org/10.1016/s0167-9317(03)00291-0}, DOI={10.1016/s0167-9317(03)00291-0}, number={2–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Gusev, E.P. and Cabral, C. and Copel, M. and D’Emic, C. and Gribelyuk, M.}, year={2003}, month=sep, pages={145–151} }

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