Crossref
journal-article
Elsevier BV
Surface Science Reports (78)
References
362
Referenced
165
{'key': '10.1016/S0167-5729(98)00011-9_bib1', 'series-title': 'Defect and impurity engineered semiconductors and devices', 'volume': 'vol. 378', 'year': '1995'}
/ Defect and impurity engineered semiconductors and devices (1995){'key': '10.1016/S0167-5729(98)00011-9_bib2', 'series-title': 'Defects in electronic materials II', 'volume': 'vol. 442', 'year': '1997'}
/ Defects in electronic materials II (1997){'key': '10.1016/S0167-5729(98)00011-9_bib3', 'series-title': 'Doping in III–V Semiconductors', 'author': 'Schubert', 'year': '1993'}
/ Doping in III–V Semiconductors by Schubert (1993){'key': '10.1016/S0167-5729(98)00011-9_bib4', 'series-title': 'Point Defects in Solids: Semiconductors and Molecular Crystals', 'year': '1975'}
/ Point Defects in Solids: Semiconductors and Molecular Crystals (1975){'key': '10.1016/S0167-5729(98)00011-9_bib5', 'series-title': 'Defects and Their Structure in Nonmetallic Solids', 'volume': 'vol. 19', 'year': '1975'}
/ Defects and Their Structure in Nonmetallic Solids (1975){'key': '10.1016/S0167-5729(98)00011-9_bib6', 'series-title': 'Point Defects in Materials', 'author': 'Agullo-Lopez', 'year': '1988'}
/ Point Defects in Materials by Agullo-Lopez (1988){'key': '10.1016/S0167-5729(98)00011-9_bib7', 'volume': 'vol. 12', 'year': '1979'}
(1979){'key': '10.1016/S0167-5729(98)00011-9_bib8', 'series-title': 'Scanning Tunneling Microscopy', 'volume': 'vol. 20', 'year': '1992'}
/ Scanning Tunneling Microscopy (1992){'key': '10.1016/S0167-5729(98)00011-9_bib9', 'series-title': 'Scanning Tunneling Microscopy', 'volume': 'vol. 28', 'year': '1992'}
/ Scanning Tunneling Microscopy (1992){'key': '10.1016/S0167-5729(98)00011-9_bib10', 'series-title': 'Scanning Tunneling Microscopy', 'volume': 'vol. 29', 'year': '1993'}
/ Scanning Tunneling Microscopy (1993){'key': '10.1016/S0167-5729(98)00011-9_bib11', 'article-title': 'Introduction to Scanning Tunneling Microscopy', 'volume': 'vol. 4', 'author': 'Chen', 'year': '1993'}
/ Introduction to Scanning Tunneling Microscopy by Chen (1993)10.1103/RevModPhys.66.841
/ Rev. Modern. Phys. by Puska (1994){'key': '10.1016/S0167-5729(98)00011-9_bib13', 'series-title': 'Identification of Defects in Semiconductors', 'article-title': 'Positron annihilation spectroscpy of defects in semiconductors', 'author': 'Saarinen', 'year': '1998'}
/ Identification of Defects in Semiconductors / Positron annihilation spectroscpy of defects in semiconductors by Saarinen (1998){'key': '10.1016/S0167-5729(98)00011-9_bib14', 'series-title': 'Photoelectronspectroscopy', 'author': 'Hüfner', 'year': '1993'}
/ Photoelectronspectroscopy by Hüfner (1993)10.1016/0039-6028(75)90230-7
/ Surf. Sci. by Williams (1975)10.1103/PhysRevB.19.2074
/ Phys. Rev. B by Chadi (1979)10.1103/PhysRevLett.41.1062
/ Phys. Rev. Lett. by Chadi (1978){'key': '10.1016/S0167-5729(98)00011-9_bib18', 'series-title': 'Festkörperprobleme', 'first-page': '1', 'article-title': 'Reconstruction of the cleavage faces of tetrahedrally coordinated compound semiconductors', 'volume': 'vol. 33', 'author': 'Duke', 'year': '1994'}
/ Festkörperprobleme / Reconstruction of the cleavage faces of tetrahedrally coordinated compound semiconductors by Duke (1994)10.1016/0039-6028(84)90103-1
/ Surf. Sci. by Chang (1984)10.1016/0167-5729(83)90006-7
/ Surf. Sci. Rep. by Kahn (1983)10.1116/1.571779
/ J. Vac. Sci. Technol. by Lee (1982)10.1103/PhysRevB.51.13367
/ Phys. Rev. B by Sabisch (1995)10.1103/PhysRevLett.36.1058
/ Phys. Rev. Lett. by Lubinsky (1976)10.1103/PhysRevB.20.4150
/ Phys. Rev. B by Chelikowsky (1979)10.1016/0749-6036(85)90034-5
/ Superlattices and Microstructures by Froelich (1985)10.1116/1.570650
/ J. Vac. Sci. Technol. by Duke (1980){'key': '10.1016/S0167-5729(98)00011-9_bib27', 'first-page': '177', 'article-title': 'Ab initio Berechnung der (1 1 0) Oberfläche von III–V Halbleitern: Simulation von Rastertunnelmikroskopie-Aufnahmen', 'author': 'Engels', 'year': '1996'}
/ Ab initio Berechnung der (1 1 0) Oberfläche von III–V Halbleitern: Simulation von Rastertunnelmikroskopie-Aufnahmen by Engels (1996)10.1103/PhysRevB.58.7799
/ Phys. Rev. B by Engels (1998)10.1016/0039-6028(86)90830-7
/ Surf. Sci. by Kahn (1986)10.1016/0378-5963(82)90051-4
/ Applications of Surf. Sci. by Duke (1982)10.1103/PhysRevB.24.562
/ Phys. Rev. B by Duke (1981)10.1116/1.572610
/ J. Vac. Sci. Technol. A by Duke (1984)10.1103/PhysRevB.19.5194
/ Phys. Rev. B by Meyer (1979)10.1016/0039-6028(83)90412-0
/ Surf. Sci. by Duke (1983)10.1116/1.582818
/ J. Vac. Sci. Technol. B by Duke (1984)10.1103/PhysRevB.17.3303
/ Phys. Rev. B by Tong (1978){'key': '10.1016/S0167-5729(98)00011-9_bib37', 'series-title': 'Collected Papers of the second Intl. Symposium on Molecular Beam Epitaxy and Clean Surface Techniques', 'first-page': '309', 'article-title': 'LEED intensity analysis of compound semiconductor (1 1 0) surface: A kinematical approach', 'author': 'Sato', 'year': '1982'}
/ Collected Papers of the second Intl. Symposium on Molecular Beam Epitaxy and Clean Surface Techniques / LEED intensity analysis of compound semiconductor (1 1 0) surface: A kinematical approach by Sato (1982)10.1103/PhysRevB.22.6171
/ Phys. Rev. B by Meyer (1980)10.1116/1.583057
/ J. Vac. Sci. Technol. B by Duke (1985)10.1103/PhysRevB.27.6189
/ C.R. Bonapace Phys. Rev. B by Duke (1983)10.1016/0039-6028(85)90221-3
/ Surf. Sci. by Smit (1985)10.1103/PhysRevB.29.4814
/ Phys. Rev. B by Smit (1984)10.1016/0039-6028(85)90069-X
/ Surf. Sci. by Mailhiot (1985)10.1103/PhysRevB.44.6188
/ M. Scheffler Phys. Rev. B by Alves (1991)10.1103/PhysRevB.37.1303
/ Phys. Rev. B by Qian (1988)10.1116/1.570979
/ J. Vac. Sci. Technol. by Duke (1981)10.1103/PhysRevB.24.3310
/ Phys. Rev. B by Duke (1981)10.1116/1.586913
/ J. Vac. Sci. Technol. B by Klepeis (1993)10.1103/PhysRevLett.77.2997
/ Phys. Rev. Lett. by Ebert (1996)10.1103/PhysRevB.22.959
/ Phys. Rev. B by Zunger (1980)10.1016/0038-1098(83)90874-8
/ Solid State Commun. by Beres (1983)10.1103/PhysRevLett.63.2112
/ Phys. Rev. Lett. by Zhu (1989)10.1016/0039-6028(86)90510-8
/ Surf. Sci. by Zhang (1986)10.1088/0022-3719/16/18/033
/ J. Phys. C by Srivastava (1983)10.1088/0022-3719/15/5/027
/ J. Phys. C by Manghi (1982)10.1103/PhysRevB.26.5702
/ Phys. Rev. B by Beres (1982)10.1103/PhysRevB.24.6029
/ Phys. Rev. B by Manghi (1981)10.1103/PhysRevB.49.17092
/ Phys. Rev. B by Schröer (1994)10.1103/PhysRevLett.44.420
/ Phys. Rev. Lett. by Spicer (1980)10.1116/1.570583
/ J. Vac. Sci. Technol. by Spicer (1980)10.1116/1.584244
/ J. Vac. Sci. Technol. B by Spicer (1988){'key': '10.1016/S0167-5729(98)00011-9_bib62', 'first-page': '501', 'article-title': 'Work Function and Bending at Semiconductor Surface', 'volume': 'vol. 35', 'author': 'Mönch', 'year': '1984'}
/ Work Function and Bending at Semiconductor Surface by Mönch (1984){'key': '10.1016/S0167-5729(98)00011-9_bib63', 'article-title': 'Semiconductor Surfaces and Interfaces', 'volume': 'vol. 26', 'author': 'Mönch', 'year': '1993'}
/ Semiconductor Surfaces and Interfaces by Mönch (1993)10.1016/0039-6028(77)90096-6
/ Surf. Sci. by Huijser (1977)10.1016/0375-9601(78)90722-3
/ Phys. Lett. A by Huijser (1978)10.1088/0022-3719/13/8/028
/ J. Phys. C by McKinley (1980)10.1103/PhysRevB.36.8075
/ Phys. Rev. B by Sorba (1987)10.1103/PhysRevB.38.13456
/ Phys. Rev. B by Reihl (1988)10.1103/PhysRevB.41.9880
/ Phys. Rev. B by Carstensen (1990)10.1016/0039-6028(91)90329-Q
/ Surf. Sci. Lett. by Nicholls (1991)10.1103/PhysRevB.35.5563
/ Phys. Rev. B by Drube (1987){'key': '10.1016/S0167-5729(98)00011-9_bib72', 'article-title': 'Elektronische Struktur der (1 1 0)- und (1 1 1)-Flächen von GaAs und CdTe', 'author': 'Janowitz', 'year': '1991'}
/ Elektronische Struktur der (1 1 0)- und (1 1 1)-Flächen von GaAs und CdTe by Janowitz (1991){'key': '10.1016/S0167-5729(98)00011-9_bib73', 'first-page': '148', 'article-title': 'Kombinierte winkelaufgelöste Photoemission und inverse Photoemission an reinen und metallbedeckten III-V(1 1 0)-Halbleiteroberflächen', 'author': 'Carstensen', 'year': '1991'}
/ Kombinierte winkelaufgelöste Photoemission und inverse Photoemission an reinen und metallbedeckten III-V(1 1 0)-Halbleiteroberflächen by Carstensen (1991)10.1103/PhysRevB.53.10894
/ Phys. Rev. B by Heinrich (1996)10.1088/0957-4484/1/1/009
/ Nanotechnology by Möller (1990)10.1016/0039-6028(92)91354-E
/ Surf. Sci. by Möller (1992)-
B. Koslowski, 1992, private communication.
(
10.1007/978-3-642-77578-9_4
) 10.1103/PhysRevB.50.4561
/ Phys. Rev. B by Feenstra (1994)10.1103/PhysRevB.39.7744
/ Phys. Rev. B by Mårtensson (1989)10.1063/1.118314
/ Appl. Phys. Lett. by Heinrich (1997)10.1103/PhysRevLett.50.1998
/ Phys. Rev. Lett. by Tersoff (1983)10.1103/PhysRevLett.6.57
/ Phys. Rev. Lett. by Bardeen (1961)10.1116/1.583691
/ J. Vac. Sci. Technol. B by Feenstra (1987)10.1116/1.585556
/ J. Vac. Sci. Technol. B by Chen (1991)10.1103/PhysRevB.52.4712
/ Phys. Rev. B by Bass (1995)10.1103/PhysRevLett.70.2471
/ Phys. Rev. Lett. by McEllistrem (1993){'key': '10.1016/S0167-5729(98)00011-9_bib87', 'first-page': '161', 'article-title': 'Mechanismen der Desorption und Entmischung auf Indiumphosphid (1 1 0)-Oberflächen bei thermischer Behandlung', 'author': 'Heinrich', 'year': '1997'}
/ Mechanismen der Desorption und Entmischung auf Indiumphosphid (1 1 0)-Oberflächen bei thermischer Behandlung by Heinrich (1997)10.1016/0039-6028(92)90920-2
/ Surf. Sci. by Ebert (1992)10.1103/PhysRevLett.58.1192
/ Phys. Rev. Lett. by Feenstra (1987)10.1103/PhysRevB.56.12321
/ Phys. Rev. B by Siemens (1997)10.1116/1.575155
/ J. Vac. Sci. Technol. A by Duke (1988)10.1116/1.584237
/ J. Vac. Sci. Technol. B by Duke (1988)10.1016/0039-6028(88)90002-7
/ Surf. Sci. Lett. by Wang (1988)10.1016/S0169-4332(96)00114-6
/ Appl. Surf. Sci. by Pollmann (1996)10.1103/PhysRevB.37.6417
/ Phys. Rev. B by Wang (1988)10.1103/PhysRevLett.62.1876
/ Phys. Rev. Lett. by Horsky (1989)10.1016/0039-6028(88)90569-9
/ Surf. Sci. by Duke (1988)10.1116/1.576008
/ J. Vac. Sci. Technol. A by Duke (1989)10.1103/PhysRevB.38.6137
/ Phys. Rev. B by Magnusson (1988)10.1103/PhysRevB.24.7275
/ Phys. Rev. B by Ivanov (1981)10.1016/S0039-6028(97)01056-X
/ Surf. Sci. by Vogel (1998)10.1016/S0039-6028(87)81126-3
/ Surf. Sci. by Wang (1987)10.1016/S0039-6028(87)80184-X
/ Surf. Sci. Lett. by Wang (1987)10.1103/PhysRevB.53.R10477
/ Phys. Rev. B by Northrup (1996)10.1103/PhysRevLett.64.2402
/ Phys. Rev. Lett. by Cox (1990)10.1116/1.585541
/ J. Vac. Sci. Technol. B by Cox (1991)10.1116/1.584578
/ J. Vac. Sci. Technol. B by Hu (1989)10.1016/0042-207X(90)90425-X
/ Vacuum by Cox (1990)10.1103/PhysRevB.42.7288
/ Phys. Rev. B by Whitman (1990)10.1103/PhysRevB.32.1394
/ Phys. Rev. B by Feenstra (1985){'key': '10.1016/S0167-5729(98)00011-9_bib111', 'first-page': '347', 'author': 'Cox', 'year': '1991'}
by Cox (1991)10.1116/1.586915
/ J. Vac. Sci. Technol. B by Lengel (1993)10.1103/PhysRevLett.72.836
/ Phys. Rev. Lett. by Lengel (1994)10.1016/0304-3991(92)90371-P
/ Ultramicroscopy by Ebert (1992)10.1103/PhysRevLett.72.840
/ Phys. Rev. Lett. by Ebert (1994)10.1016/0304-3991(93)90240-X
/ Ultramicroscopy by Ebert (1993){'key': '10.1016/S0167-5729(98)00011-9_bib117', 'first-page': '479', 'article-title': 'Characterization of the gallium vacancy on GaAs(1 1 0)', 'volume': 'vol. 1', 'author': 'Lengel', 'year': '1995'}
/ Characterization of the gallium vacancy on GaAs(1 1 0) by Lengel (1995)10.1103/PhysRevB.58.1401
/ Phys. Rev. B by Ebert (1998){'key': '10.1016/S0167-5729(98)00011-9_bib119', 'article-title': 'Quantitative Untersuchung von Defekten auf Oberflächen von III-V-Verbindungshalbleitern mit dem Rastertunnelmikroskop', 'author': 'Ebert', 'year': '1993'}
/ Quantitative Untersuchung von Defekten auf Oberflächen von III-V-Verbindungshalbleitern mit dem Rastertunnelmikroskop by Ebert (1993)-
M. Weimer, 1994, unpublished.
(
10.1177/095042229400800103
) 10.1007/s003390051124
/ Appl. Phys. A by Depuydt (1998){'key': '10.1016/S0167-5729(98)00011-9_bib122', 'first-page': '77', 'article-title': 'Untersuchungen von CdSe- und CdS-Spaltoberfächen mit Hilfe der Rastertunnelmikroskopie', 'author': 'Siemens', 'year': '1997'}
/ Untersuchungen von CdSe- und CdS-Spaltoberfächen mit Hilfe der Rastertunnelmikroskopie by Siemens (1997)10.1103/PhysRevLett.77.119
/ Phys. Rev. Lett. by Zhang (1996)10.1103/PhysRevLett.77.1063
/ Phys. Rev. Lett. by Kim (1996)10.1103/PhysRevB.58.1392
/ Phys. Rev. B by Schwarz (1998)10.1103/PhysRevB.51.9696
/ Phys. Rev. B by Ebert (1995)10.1116/1.579757
/ J. Vac. Sci. Technol. A by Heinrich (1995)10.1116/1.585508
/ J. Vac. Sci. Technol. B by Whitman (1991)10.1103/PhysRevLett.72.1490
/ Phys. Rev. Lett. by Zheng (1994)10.1116/1.584241
/ J. Vac. Sci. Technol. B by Hamers (1988)10.1103/PhysRevLett.58.1668
/ Phys. Rev. Lett. by Stroscio (1987)10.1016/0039-6028(93)91094-6
/ Surf. Sci. by Ebert (1993)10.1103/PhysRevB.57.4482
/ Phys. Rev. B by Domke (1998)10.1103/PhysRevB.20.5150
/ Phys. Rev. B by Daw (1979)10.1116/1.570584
/ J. Vac. Sci. Technol. by Daw (1980)10.1016/0039-6028(80)90583-X
/ Surf. Sci. by Lohez (1980)10.1116/1.571048
/ J. Vac. Sci. Technol. by Daw (1981)10.1063/1.91594
/ Appl. Phys. Lett. by Daw (1980)10.1116/1.571620
/ J. Vac. Sci. Technol. by Dow (1982)10.1116/1.571780
/ J. Vac. Sci. Technol. by Beyer (1982)10.1016/S0039-6028(98)00202-7
/ Surf. Sci. by Kim (1998)- G. Schwarz, 1997, unpublished.
10.1103/PhysRevB.51.11198
/ Phys. Rev. B by Yi (1995){'key': '10.1016/S0167-5729(98)00011-9_bib144', 'first-page': '77', 'article-title': 'Theoretische Untersuchungen zu Leerstellen auf der (1 1 0)-Oberfläche von GaP, Diplomarbeit', 'author': 'Schwarz', 'year': '1996'}
/ Theoretische Untersuchungen zu Leerstellen auf der (1 1 0)-Oberfläche von GaP, Diplomarbeit by Schwarz (1996)10.1103/PhysRevB.47.9346
/ Phys. Rev. B by Khoo (1993)10.1103/PhysRevB.54.10288
/ Phys. Rev. B by Domke (1996)10.1103/PhysRevLett.71.1176
/ Phys. Rev. Lett. by Feenstra (1993)- K. Horn et al., 1998, to be published.
{'key': '10.1016/S0167-5729(98)00011-9_bib149', 'article-title': 'Point Defects in Semiconductors II, Experimental Aspects', 'volume': 'vol. 35', 'author': 'Bourgoin', 'year': '1983'}
/ Point Defects in Semiconductors II, Experimental Aspects by Bourgoin (1983)10.1103/PhysRevB.53.6935
/ Phys. Rev. B by Chao (1996)10.1116/1.589181
/ J. Vac. Sci. Technol. B by Chao (1996)10.1116/1.580340
/ J. Vac. Sci. Technol. A by Ebert (1996)10.1103/PhysRevLett.76.2089
/ Phys. Rev. Lett. by Ebert (1996)10.1103/PhysRevB.53.4580
/ Phys. Rev. B by Ebert (1996)10.1103/PhysRevLett.78.3334
/ Phys. Rev. Lett. by Gebauer (1997)10.1103/PhysRevB.31.805
/ Phys. Rev. B by Tersoff (1985)10.1103/PhysRevLett.76.4725
/ Phys. Rev. Lett. by Lengel (1996){'key': '10.1016/S0167-5729(98)00011-9_bib158', 'article-title': 'Untersuchung von Grenzflächen und Gitterbaufehlern in GaAs mit Hilfe der Rastertunnelmikroskopie', 'author': 'Cox', 'year': '1990'}
/ Untersuchung von Grenzflächen und Gitterbaufehlern in GaAs mit Hilfe der Rastertunnelmikroskopie by Cox (1990)10.1103/PhysRevLett.79.3315
/ Phys. Rev. Lett. by Kim (1997){'key': '10.1016/S0167-5729(98)00011-9_bib160', 'first-page': '220', 'volume': '161', 'author': 'Jahn', 'year': '1937'}
by Jahn (1937)10.1103/PhysRevLett.79.3312
/ Phys. Rev. Lett. by Harper (1997)10.1103/PhysRevLett.79.3313
/ Phys. Rev. Lett. by Zhang (1997)10.1103/PhysRevLett.79.3314
/ Phys. Rev. Lett. by Harper (1997)10.1063/1.112961
/ Appl. Phys. Lett. by Wang (1994)10.1103/PhysRevB.51.10929
/ Phys. Rev. B by Pechman (1995)10.1116/1.588129
/ J. Vac. Sci. Technol. B by Wang (1995)10.1088/0022-3727/7/17/318
/ J. Phys. D by Farrow (1974)10.1063/1.326627
/ J. Appl. Phys. by Lum (1979)10.1021/j100213a034
/ J. Phys. Chem. by Gallagher (1982)10.1116/1.582700
/ J. Vac. Sci. Technol. B by Van Uitert (1983)10.1063/1.333312
/ J. Appl. Phys. by Massies (1984)10.1063/1.334795
/ J. Appl. Phys. by Massies (1985)10.1016/0039-6028(76)90358-7
/ Surf. Sci. by Goldstein (1976)10.1103/PhysRevLett.70.1437
/ Phys. Rev. Lett. by Ebert (1993)10.1116/1.578472
/ J. Vac. Sci. Technol. A by Gwo (1993)10.1016/0921-5107(91)90130-N
/ Mater. Sci. Eng. B by Tan (1991){'key': '10.1016/S0167-5729(98)00011-9_bib177', 'series-title': 'Atom Movements, Diffusion, and Mass Transport in Solids', 'author': 'Philibert', 'year': '1991'}
/ Atom Movements, Diffusion, and Mass Transport in Solids by Philibert (1991)10.1016/0378-4363(83)90658-7
/ Physica B by Bartels (1983)10.1016/0040-6090(75)90220-5
/ Thin Solid Films by Bayliss (1975)10.1088/0268-1242/5/3/001
/ Semicond. Sci. Technol. by Juza (1990){'key': '10.1016/S0167-5729(98)00011-9_bib181', 'series-title': 'Handbook of Crystal Growth 1A: Thermodynamics and Kinetics', 'first-page': '103', 'article-title': 'Defect thermodynamics and phase diagrams in compound crystal growth processes', 'author': 'Wenzl', 'year': '1993'}
/ Handbook of Crystal Growth 1A: Thermodynamics and Kinetics / Defect thermodynamics and phase diagrams in compound crystal growth processes by Wenzl (1993){'key': '10.1016/S0167-5729(98)00011-9_bib182', 'series-title': 'Proceedings of the 17th International Conference on the Physics of Semiconductors', 'first-page': '85', 'article-title': 'On the temperature coeffcient of the ionization energy in III–V compound semiconductors', 'author': 'Mönch', 'year': '1985'}
/ Proceedings of the 17th International Conference on the Physics of Semiconductors / On the temperature coeffcient of the ionization energy in III–V compound semiconductors by Mönch (1985)10.1063/1.104939
/ Appl. Phys. Lett. by Yamada (1991)10.1143/JJAP.30.L1982
/ Jpn. J. Appl. Phys. by Yamada (1991){'key': '10.1016/S0167-5729(98)00011-9_bib185', 'article-title': 'Geometrische und elektrische Struktur von Gitterbaufehlern auf der Oberfläche von III–V-Halbleitern', 'author': 'Simon', 'year': '1996'}
/ Geometrische und elektrische Struktur von Gitterbaufehlern auf der Oberfläche von III–V-Halbleitern by Simon (1996)10.1080/10408439108244631
/ Crit. Rev. Solid. State Mater. Sci. by Tan (1991)10.1007/BF00539483
/ Appl. Phys. A by Tan (1993)10.1016/0039-6028(91)90552-4
/ Surf. Sci. Lett. by Ong (1991)10.1063/1.106716
/ Appl. Phys. Lett. by Itoh (1992)10.1063/1.107804
/ Appl. Phys. Lett. by Feenstra (1992)10.1063/1.110274
/ Appl. Phys. Lett. by Johnson (1993)10.1063/1.111999
/ Appl. Phys. Lett. by Johnson (1994)10.1116/1.587716
/ J. Vac. Sci. Technol. A by Zheng (1994)10.4028/www.scientific.net/MSF.143-147.1319
/ Mater. Sci. Forum by Zheng (1994)10.1103/PhysRevLett.76.1075
/ Phys. Rev. Lett. by van der Wielen (1996)10.1063/1.121380
/ Appl. Phys. Lett. by Grandidier (1998){'key': '10.1016/S0167-5729(98)00011-9_bib197', 'first-page': '49', 'article-title': 'Observation of Defects in Zn-diffused GaAs by Scanning Tunneling Microscopy', 'author': 'Simon', 'year': '1994'}
/ Observation of Defects in Zn-diffused GaAs by Scanning Tunneling Microscopy by Simon (1994)10.1063/1.111771
/ Appl. Phys. Lett. by Zheng (1994)10.1063/1.110073
/ Appl. Phys. Lett. by Johnson (1993)10.1103/PhysRevLett.75.1606
/ Phys. Rev. Lett. by Johnson (1995)10.1016/0921-5107(95)01436-5
/ Mater. Sci. Eng. B by Koenraad (1995)10.4028/www.scientific.net/MSF.196-201.1949
/ Mater. Sci. Forum by Gwo (1995)10.1103/PhysRevB.59.2995
/ Phys. Rev. B by Siemens (1999)10.1116/1.586959
/ J. Vac. Sci. Technol. B by Vaterlaus (1993)10.1063/1.107682
/ Appl. Phys. Lett. by Gwo (1992)10.1116/1.586960
/ J. Vac. Sci. Technol. B by Gwo (1993)10.1103/PhysRevB.41.7666
/ Phys. Rev. B by Jansen (1990)10.1063/1.113089
/ Appl. Phys. Lett. by Zheng (1994){'key': '10.1016/S0167-5729(98)00011-9_bib209', 'article-title': 'Study of imperfections near the cleaved GaAs(1 1 0) surface by low temperature scanning tunneling microscopy', 'author': 'van der Wielen', 'year': '1998'}
/ Study of imperfections near the cleaved GaAs(1 1 0) surface by low temperature scanning tunneling microscopy by van der Wielen (1998)10.1016/S0039-6028(98)00535-4
/ Surf. Sci. by Domke (1998)10.1080/14786440808561235
/ Phil. Mag. by Dingle (1955)10.1103/PhysRevB.39.3192
/ Phys. Rev. B by Jansen (1989)10.1103/PhysRevB.47.6791
/ Phys. Rev. B by Northrup (1993)10.1103/PhysRevB.47.10326
/ Phys. Rev. B by Wang (1993)10.1103/PhysRev.108.965
/ Phys. Rev. by Kolm (1957){'key': '10.1016/S0167-5729(98)00011-9_bib216', 'series-title': 'Proceedings of the International Conference on Semiconductor Physics', 'first-page': '943', 'article-title': 'Effects of silicon in gallium arsenide', 'author': 'Whelan', 'year': '1961'}
/ Proceedings of the International Conference on Semiconductor Physics / Effects of silicon in gallium arsenide by Whelan (1961)10.1103/PhysRevB.51.10527
/ Phys. Rev. B by Schuppler (1995)10.1063/1.110500
/ Appl. Phys. Lett. by Schuppler (1993)10.1063/1.98265
/ Appl. Phys. Lett. by Maguire (1987)10.1080/01418619208201555
/ Phil. Mag. A by Muto (1992){'key': '10.1016/S0167-5729(98)00011-9_bib221', 'series-title': 'Electronic Structure and Properties of Semiconductors', 'first-page': '65', 'article-title': 'Optical properties and charge transport', 'volume': 'vol. 4', 'author': 'Ulbrich', 'year': '1991'}
/ Electronic Structure and Properties of Semiconductors / Optical properties and charge transport by Ulbrich (1991)10.1103/PhysRevLett.31.1207
/ Phys. Rev. Lett. by Tsong (1973)10.1103/RevModPhys.54.437
/ Rev. Mod. Phys. by Ando (1982)10.1016/0038-1098(90)90206-Q
/ Solid. State Commun. by Bechstedt (1990)10.1016/0039-6028(86)90710-7
/ Surf. Sci. by Bardyszewski (1986)10.1103/PhysRevB.44.12918
/ Phys. Rev. B by Reining (1991)10.1103/PhysRevLett.71.2338
/ Phys. Rev. Lett. by Pehlke (1993){'key': '10.1016/S0167-5729(98)00011-9_bib228', 'first-page': '432', 'article-title': 'Statistical Mechanics: Principles and Selected Applications', 'author': 'Hill', 'year': '1956'}
/ Statistical Mechanics: Principles and Selected Applications by Hill (1956)10.1103/PhysRevB.53.1343
/ Phys. Rev. B by Zhang (1996){'key': '10.1016/S0167-5729(98)00011-9_bib230', 'first-page': '95', 'article-title': 'Methods of tunneling spectroscopy', 'volume': 'vol. 27', 'author': 'Stroscio', 'year': '1993'}
/ Methods of tunneling spectroscopy by Stroscio (1993)10.1103/PhysRevLett.73.850
/ Phys. Rev. Lett. by Chen (1994)10.1116/1.588226
/ J. Vac. Sci. Technol. B by Lengel (1995)10.1103/PhysRevB.52.11380
/ Phys. Rev. B by Zhang (1995)10.1116/1.590278
/ J. Vac. Sci. Technol. B by Domke (1998)10.1103/PhysRevB.34.5947
/ Phys. Rev. B by Lang (1986){'key': '10.1016/S0167-5729(98)00011-9_bib236', 'volume': 'vol. 26', 'year': '1982'}
(1982)10.1063/1.1723358
/ J. Appl. Phys. by Seiwatz (1958)10.1016/0039-6028(87)90170-1
/ Surf. Sci. by Feenstra (1987)10.1103/PhysRevLett.72.1108
/ Phys. Rev. Lett. by Smith (1994)10.1103/PhysRevB.41.9980
/ Phys. Rev. B by Puska (1990)10.1063/1.1663719
/ J. Appl. Phys. by Lang (1974)10.1088/0022-3719/18/20/012
/ J. Phys. C by Pons (1985)10.1103/PhysRevLett.55.1327
/ Phys. Rev. Lett. by Baraff (1985)10.1103/PhysRevB.47.6381
/ Phys. Rev. B by Alatalo (1993)10.1103/PhysRevB.49.5253
/ Phys. Rev. B by Seitsonen (1994)10.1063/1.321985
/ J. Appl. Phys. by Chiang (1975)10.1103/PhysRev.121.1305
/ Phys. Rev. by Goldstein (1961){'key': '10.1016/S0167-5729(98)00011-9_bib248', 'article-title': 'Untersuchung bestrahlungsinduzierter Punktdefekte in Halbleitern mit diffuser Röntgenstreuung', 'author': 'Karsten', 'year': '1993'}
/ Untersuchung bestrahlungsinduzierter Punktdefekte in Halbleitern mit diffuser Röntgenstreuung by Karsten (1993){'key': '10.1016/S0167-5729(98)00011-9_bib249', 'first-page': '221', 'article-title': 'Nuclear Instruments & Methods in Physics Research', 'volume': '64', 'author': 'Wahl', 'year': '1992', 'journal-title': 'Beam Interactions with Materials and Atoms'}
/ Beam Interactions with Materials and Atoms / Nuclear Instruments & Methods in Physics Research by Wahl (1992)10.1016/0038-1098(86)90529-6
/ Solid State Commun. by von Bardeleben (1986)10.1063/1.348497
/ J. Appl. Phys. by Yu (1991)10.4028/www.scientific.net/MSF.61.29
/ Mater. Sci. Forum by Litong (1990)10.1103/PhysRevB.44.10585
/ Phys. Rev. B by Saarinen (1991)10.1103/PhysRevLett.70.2794
/ Phys. Rev. Lett. by Saarinen (1993)10.1063/1.352900
/ J. Appl. Phys. by Chichibu (1993)10.1103/PhysRevB.49.2385
/ Phys. Rev. B by Krause-Rehberg (1994)10.1063/1.1782150
/ J. Appl. Phys. by Queisser (1966)10.1063/1.334064
/ J. Appl. Phys. by Theis (1984)10.4028/www.scientific.net/MSF.38-41.815
/ Mater. Sci. Forum by Wagner (1989)10.1016/0022-0248(89)90599-X
/ J. Crystal Growth by Venkatasubramanian (1989)10.1103/PhysRevLett.60.361
/ Phys. Rev. Lett. by Theis (1988)10.1139/p89-066
/ Can. J. Phys. by Teh (1989)10.1088/0022-3719/19/12/005
/ J. Phys. C by Maguire (1986)10.1016/0022-0248(89)90229-7
/ J. Crystal Growth by Morozov (1989){'key': '10.1016/S0167-5729(98)00011-9_bib265', 'first-page': '127', 'author': 'Narusawa', 'year': '1984'}
by Narusawa (1984)10.1103/PhysRevLett.72.3214
/ Phys. Rev. Lett. by Gilgien (1994)10.1103/PhysRevB.52.10932
/ Phys. Rev. B by Saarinen (1995)10.1103/PhysRevB.39.5287
/ Phys. Rev. B by Saarinen (1989){'key': '10.1016/S0167-5729(98)00011-9_bib269', 'first-page': '457', 'volume': '64', 'author': 'Krause-Rehberg', 'year': '1997', 'journal-title': 'Appl. Phys. A'}
/ Appl. Phys. A by Krause-Rehberg (1997){'key': '10.1016/S0167-5729(98)00011-9_bib270', 'first-page': '7347', 'volume': '1', 'author': 'Puska', 'year': '1989', 'journal-title': 'J. Phys.'}
/ J. Phys. by Puska (1989)10.1103/PhysRevB.45.3386
/ Phys. Rev. B by Corbel (1992)10.1103/PhysRevB.54.R11050
/ Phys. Rev. B by Laine (1996)10.1063/1.117193
/ Appl. Phys. Lett. by Goldman (1996)10.1080/10420158908212982
/ Radiat. Eff. Defects Solids by Dannefaer (1989)10.1063/1.116503
/ Appl. Phys. Lett. by Götz (1996)10.1063/1.1662287
/ J. Appl. Phys. by Kung (1973)10.1063/1.1663074
/ J. Appl. Phys. by Kung (1974)10.1063/1.347258
/ J. Appl. Phys. by Suezawa (1991)10.1063/1.327805
/ J. Appl. Phys. by Chen (1980)10.1063/1.349647
/ J. Appl. Phys. by Lee (1991)10.1103/PhysRevLett.67.2339
/ Phys. Rev. Lett. by Zhang (1991)10.1103/PhysRevB.53.9814
/ Phys. Rev. B by Kuisma (1996)10.1103/PhysRevB.52.5675
/ Phys. Rev. B by Seong (1995)10.1063/1.324550
/ J. Appl. Phys. by Lum (1978)10.1088/0268-1242/9/10/001
/ Semicond. Sci. Technol. by Newman (1994)10.1007/BF00617180
/ Appl. Phys. A by Neave (1983)10.1016/0022-0248(90)90358-R
/ J. Crystal Growth by Okuno (1990)10.1103/PhysRevLett.69.2791
/ Phys. Rev. Lett. by Fuoss (1992)10.1016/0022-0248(91)91100-O
/ J. Crystal Growth by Mo (1991)10.1103/PhysRevLett.59.1691
/ Phys. Rev. Lett. by Chadi (1987)10.1103/PhysRevLett.65.1913
/ Phys. Rev. Lett. by Swartzentruber (1990)10.1103/PhysRevB.48.5704
/ Phys. Rev. B by Kitamura (1993)10.1103/PhysRevLett.74.2710
/ Phys. Rev. Lett. by Pearson (1995)10.1103/PhysRevLett.61.2469
/ Phys. Rev. Lett. by Men (1988)10.1103/PhysRevLett.61.1973
/ Phys. Rev. Lett. by Alerhand (1988)10.1103/PhysRevLett.59.2173
/ Phys. Rev. Lett. by Feenstra (1987)10.1116/1.575127
/ J. Vac. Sci. Technol. A by Feenstra (1988)10.1116/1.586215
/ J. Vac. Sci. Technol. B by Pashley (1992)10.1143/JJAP.34.25
/ Jpn. J. Appl. Phys. by Doi (1995)- J.E. Hulse, 1996 private communication.
10.1116/1.584232
/ J. Vac. Sci. Technol. B by Koenders (1988)10.1103/PhysRevLett.37.1158
/ Phys. Rev. Lett. by Guichar (1976)10.1016/0039-6028(91)91177-Y
/ Surf. Sci. by Mo (1991)10.1038/325419a0
/ Nature by Becker (1987)10.1038/344524a0
/ Nature by Eigler (1990)10.1126/science.262.5131.218
/ Science by Crommie (1993)10.1038/352600a0
/ Nature by Eigler (1991)10.1016/0304-3991(92)90256-J
/ Ultramicroscopy by Zeppenfeld (1992)10.1007/BF01538415
/ Appl. Phys. A by Meyer (1995)10.1002/pssb.2221920208
/ Phys. Stat. Solid (b) by Meyer (1995)10.1103/PhysRevLett.77.2113
/ Phys. Rev. Lett. by Meyer (1996){'key': '10.1016/S0167-5729(98)00011-9_bib312', 'first-page': '105', 'volume': '51', 'author': 'Meyer', 'year': '1995', 'journal-title': 'Phys. B1.'}
/ Phys. B1. by Meyer (1995)10.1103/PhysRevLett.65.2418
/ Phys. Rev. Lett. by Mamin (1990)10.1116/1.585205
/ J. Vac. Sci. Technol. B by Mamin (1991)10.1126/science.251.4998.1206
/ Science by Whitman (1991)10.1126/science.253.5016.173
/ Science by Lyo (1991)10.1016/0039-6028(93)91469-6
/ Surf. Sci. Lett. by Kobayashi (1993)10.1126/science.261.5123.886
/ Science by Mo (1993){'key': '10.1016/S0167-5729(98)00011-9_bib319', 'first-page': '132', 'article-title': 'Nanometer-scale pattern formation at surfaces', 'volume': 'vol. 42', 'author': 'Zhang', 'year': '1995'}
/ Nanometer-scale pattern formation at surfaces by Zhang (1995)10.1126/science.265.5171.502
/ Science by Salling (1994)10.1116/1.588298
/ J. Vac. Sci. Technol. B by Salling (1995)10.1116/1.589089
/ J. Vac. Sci. Technol. B by Salling (1996)10.1126/science.268.5217.1590
/ Science by Shen (1995)10.1126/science.270.5242.1646
/ Science by Sugawara (1995)10.1116/1.579017
/ J. Vac. Sci. Technol. A by Lengel (1994){'key': '10.1016/S0167-5729(98)00011-9_bib326', 'article-title': 'Untersuchung der Kristallgitterdefekte und der Kompensationsmechanismen in hoch siliziumdotiertem GaAs mit Hilfe der Rastertunnelmikroskopie', 'author': 'Domke', 'year': '1998'}
/ Untersuchung der Kristallgitterdefekte und der Kompensationsmechanismen in hoch siliziumdotiertem GaAs mit Hilfe der Rastertunnelmikroskopie by Domke (1998)- G. Cox, 1991, unpublished.
- C.K. Shih, 1995, private communication.
10.1016/0304-3991(92)90357-P
/ Ultramicroscopy by Cox (1992)- Ph. Ebert et al., unpublished.
10.1103/PhysRevLett.71.2082
/ Phys. Rev. Lett. by Kitamura (1993)10.1103/PhysRevLett.71.3677
/ Phys. Rev. Lett. by Zhang (1993)10.1103/PhysRevLett.74.294
/ Phys. Rev. Lett. by Senft (1995)10.1063/1.459694
/ J. Chem. Phys. by Wrigley (1990)10.1063/1.457600
/ J. Chem. Phys. by Wang (1989)10.1103/PhysRevLett.65.729
/ Phys. Rev. Lett. by Feibelman (1990)10.1103/PhysRevLett.64.3143
/ Phys. Rev. Lett. by Kellogg (1990)10.1103/PhysRevLett.64.3147
/ Phys. Rev. Lett. by Chen (1990)10.1103/PhysRevLett.68.1567
/ Phys. Rev. Lett. by Ganz (1992)10.1126/science.258.5085.1119
/ Science by Hwang (1992)10.1103/PhysRevB.45.13599
/ Phys. Rev. B by Lang (1992)10.1103/PhysRevLett.69.2427
/ Phys. Rev. Lett. by Miskovsky (1992)10.1103/PhysRevB.44.13703
/ Phys. Rev. B by Tsong (1991)10.1103/PhysRevB.46.2640
/ Phys. Rev. B by Miskovsky (1992)10.1126/science.254.5036.1319
/ Science by Stroscio (1991)10.1126/science.248.4954.454
/ Science by Landman (1990)10.1016/0375-9601(72)90523-3
/ Phys. Lett by Bourgoin (1972)10.1080/00337577808240846
/ Radiat. Effects by Bourgoin (1978)10.1103/PhysRevLett.33.489
/ Phys. Rev. Lett. by Lang (1974)10.1103/PhysRevB.12.3286
/ Phys. Rev. B by Weeks (1975)10.1103/PhysRevB.15.989
/ Phys. Rev. B by Henry (1977)10.1103/PhysRevB.29.4616
/ Phys. Rev. B by Sumi (1984)10.1103/PhysRevB.50.11750
/ Phys. Rev. by Nienhaus (1994)10.1016/0039-6028(95)00234-0
/ Surf. Sci. Lett. by Nienhaus (1995)10.1103/PhysRevLett.79.1094
/ J. Sahm, Phys. Rev. Lett. by Hinrichs (1997)10.1103/PhysRevB.52.2001
/ Phys. Rev. B by Schmidt (1995)10.1103/PhysRevB.52.11326
/ Phys. Rev. B by Fritsch (1995)10.1103/PhysRevB.53.15675
/ Phys. Rev. B by Tütüncü (1996)10.1016/S0039-6028(97)00403-2
/ Surf. Sci. by Eckl (1997)10.1103/PhysRevLett.64.1051
/ Phys. Rev. Lett. by Hamers (1990)10.1103/PhysRevB.41.10283
/ Phys. Rev. B by Waddill (1990)10.1016/S0039-6028(97)00222-7
/ Surf. Sci. by Krueger (1997)
Dates
Type | When |
---|---|
Created | 22 years, 9 months ago (Oct. 31, 2002, 4:53 p.m.) |
Deposited | 6 years, 3 months ago (April 25, 2019, 3:25 p.m.) |
Indexed | 3 days, 6 hours ago (Aug. 20, 2025, 9:21 a.m.) |
Issued | 26 years, 7 months ago (Jan. 1, 1999) |
Published | 26 years, 7 months ago (Jan. 1, 1999) |
Published Print | 26 years, 7 months ago (Jan. 1, 1999) |
@article{Ebert_1999, title={Nano-scale properties of defects in compound semiconductor surfaces}, volume={33}, ISSN={0167-5729}, url={http://dx.doi.org/10.1016/s0167-5729(98)00011-9}, DOI={10.1016/s0167-5729(98)00011-9}, number={4–8}, journal={Surface Science Reports}, publisher={Elsevier BV}, author={Ebert, Ph.}, year={1999}, month=jan, pages={121–303} }