Crossref
journal-article
Elsevier BV
Surface Science Reports (78)
References
153
Referenced
128
-
G.E. Moore, IEEE IEDM Tech. Dig. 11 (1975).
(
10.1038/256011a0
) 10.1109/5.915374
/ Proc. IEEE by Frank (2001)-
L.C. Feldman, in: E.Y.J. Chabal (Ed.), Fundamental Aspects of Silicon Oxidation, Springer, Berlin, 2001, p. 1.
(
10.1007/978-3-642-56711-7_1
) 10.1063/1.1385803
/ J. Appl. Phys. / Applied physics review by Green (2001)- E.P. Gusev, in: G. Pachionni (Ed.), Defects in SiO2 and Related Dielectrics: Science and Technology, Kluwer Academic Publishers, Dordrecht, 2000, p. 1.
-
L.C. Feldman, E.P. Gusev, E. Garfunkel, in: E. Garfunkel, E.P. Gusev, A. Vul’ (Eds.), Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, Kluwer Academic Publishers, Dordrecht, 1998, p. 1.
(
10.1007/978-94-011-5008-8_1
) 10.1557/PROC-567-227
/ Mater. Res. Soc. Symp. Proc. by Massoud (1999)-
G. Timp, K.K. Bourdelle, J.E. Bower, F.H. Baumann, T. Boone, R. Cirelli, K. Evans-Lutterodt, J. Garno, A. Ghetti, H. Gossman, M.L. Green, D. Jacobson, Y. Kim, R. Kleiman, F. Klemens, A. Kornblit, C. Lochstampfor, W. Mansfield, S. Moccio, D.A. Muller, L.E. Ocolla, M.L. O’Malley, J. Rosamilia, J. Sapjeta, P. Silverman, T. Sorsch, D.M. Tennant, W. Timp, B.E. Weir, IEEE IEDM Tech. Dig. 615 (1998)
(
10.1109/IEDM.1998.746433
) 10.1109/16.506774
/ IEEE Trans. Electron Dev. by Momose (1996)-
G. Timp, J. Bude, K.K. Bourdelle, J. Garno, A. Ghetti, H. Gossman, M. Green, G. Forsyth, Y. Kim, R. Kleiman, IEEE IEDM Tech. Dig. 55 (1999).
(
10.1109/IEDM.1999.823845
) 10.1038/21602
/ Nature by Muller (1999)- International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2001. http://www.public.itrs.net/.
10.1109/55.704403
/ IEEE Electron Dev. Lett. by Cao (1998)10.1109/55.285386
/ IEEE Electron Dev. Lett. by Ma (1994)10.1147/rd.433.0265
/ IBM J. Res. Dev. by Gusev (1999)- C. Krug, I.J.R. Baumvol, F.C. Stedile, M.L. Green, F. Klemens, P.J. Silverman, T.W. Sorsch, F. Alvarez, P. Hammer, N.M. Victoria, in: H.Z. Massoud, E.H. Poindexter, I.J.R. Baumvol (Eds.), The Physics and Chemistry of SiO2 and the Si–SiO2 Interface-4, The Electrochemical Society, Pennington, 2000, p. 187.
{'key': '10.1016/S0167-5729(02)00113-9_BIB16', 'first-page': '342', 'volume': '432', 'author': 'Krug', 'year': '2001', 'journal-title': 'IEEE Trans. Ion Implant. Technol.'}
/ IEEE Trans. Ion Implant. Technol. by Krug (2001)10.1063/1.123374
/ Appl. Phys. Lett. by Baumvol (1999)-
T. Hori, Dielectrics and MOS ULSIs, Springer, New York, 1997.
(
10.1007/978-3-642-60856-8
) - S. Dimitrijev, Understanding Semiconductor Devices, Oxford University Press, New York, 2000.
10.1038/35023243
/ Nature by Kingon (2000){'key': '10.1016/S0167-5729(02)00113-9_BIB21', 'first-page': '1927', 'volume': '76', 'author': 'Lee', 'year': '2000', 'journal-title': 'Appl. Phys. Lett.'}
/ Appl. Phys. Lett. by Lee (2000)10.1063/1.371888
/ J. Appl. Phys. by Wilk (2000)- C. Werkhoven, C. Pomarede, E. Shero, M. Givens, S. Haukka, M. Tuominen, J.W. Maes, in: J. Morais, I.J.R. Baumvol (Eds.), Alternatives to SiO2 as Gate Dielectrics for Future Si-based Microelectronics, Materials Research Society Workshop Series, Materials Research Society, Warrendale, 2002, p. 3.
10.1063/1.1361065
/ J. Appl. Phys. / Applied physics review by Wilk (2001)10.1016/S0167-9317(01)00667-0
/ Microelectron. Eng. by Gusev (2001)10.1016/S0927-796X(97)00023-5
/ Mater. Sci. Eng. by Chaneliere (1998)10.1557/JMR.1996.0350
/ J. Mater. Res. by Hubbard (1996)10.1063/1.1477266
/ Appl. Phys. Lett. by Chang (2002)10.1063/1.124036
/ Appl. Phys. Lett. by Wilk (1999)- L.G. Gosset, J.-J. Ganem, O. Renault, Ph. Holliger, F. Damlecourt, G. Rolland, H.J. Von Bardeleben, F. Pierre, D. Jalabert, I. Trimaille, J.-L. Cantin, S. Rigo, A. Ermolieff, F. Martin, M.-N. Semeria, in: J. Morais, I.J.R. Baumvol (Eds.), Alternatives to SiO2 as Gate Dielectrics for Future Si-based Microelectronics, Materials Research Society Workshop Series, Materials Research Society, Warrendale, 2002, p. 5.
10.1149/1.1337607
/ J. Electrochem. Soc. by Choi (2001)10.1063/1.1495882
/ Appl. Phys. Lett. by Harris (2002)10.1063/1.1310635
/ Appl. Phys. Lett. by Houssa (2000)10.1063/1.1418266
/ Appl. Phys. Lett. by Ramanatham (2001)-
Callegari, E. Cartier, M. Gribelyuk, H.F. Okorn-Schmidt, T. Zabel, J. Appl. Phys. 90 (2001) 6466.
(
10.1063/1.1417991
) - H. Iwai, S. Ohmi, in: J. Morais, I.J.R. Baumvol (Eds.), Alternatives to SiO2 as Gate Dielectrics for Future Si-based Microelectronics, Materials Research Society Workshop Series, Materials Research Society, Warrendale, 2002, p. 1.
10.1149/1.1388996
/ Electrochem. Sol. State Lett. by Su (2001)10.1063/1.1505120
/ Appl. Phys. Lett. by Opila (2002)10.1063/1.1506207
/ Appl. Phys. Lett. by Lin (2002)10.1063/1.1506782
/ Appl. Phys. Lett. by Yamamoto (2002)10.1016/S0167-5729(99)00006-0
/ Surf. Sci. Rep. by Baumvol (1999)10.1016/0169-4332(89)90420-0
/ Appl. Surf. Sci. by Trimaille (1989)10.1103/PhysRevB.60.1492
/ Phys. Rev. B by Baumvol (1999)10.1016/0370-1573(90)90099-N
/ Phys. Rep. by Bouchaud (1990)10.1080/00018738700101072
/ Adv. Phys. by Havlin (1987)10.1016/S0370-1573(00)00070-3
/ Phys. Rep. by Metzler (2000)-
L.E. Reichl, A Modern Course in Statistical Physics, 2nd ed., Wiley, New York, 1998.
(
10.1119/1.19118
) - S. Rigo, in: G. Barbottin, A. Vapaille (Eds.), Instabilities in Silicon Devices, Elsevier, Amsterdam, 1986, p. 5.
10.1103/PhysRevB.61.12992
/ Phys. Rev. B by de Almeida (2000)- I. Trimaille, F.C. Stedile, J.-J. Ganem, I.J.R. Baumvol, S. Rigo, in: H.Z. Massoud, E.H. Poindexter, C.R. Helms (Eds.), The Physics and Chemistry of SiO2 and of the Si–SiO2 Interface-3, vol. 96, No. 1, The Electrochemical Society, Pennington, 1996, p. 59.
10.1016/0168-583X(94)95821-1
/ Nucl. Instrum. Meth. Phys. Res. B by Stedile (1994)10.1063/1.115035
/ Appl. Phys. Lett. by Lu (1995)10.1149/1.2114204
/ J. Electrochem. Soc. by Massoud (1985)10.1149/1.2113648
/ J. Electrochem. Soc. by Massoud (1985)10.1103/PhysRevLett.57.1185
/ Phys. Rev. Lett. by Boszo (1986)10.1016/0039-6028(91)90975-X
/ Surf. Sci. by Bischoff (1991)10.1016/0039-6028(91)90095-A
/ Surf. Sci. by Larsson (1991)10.1016/0039-6028(91)91089-G
/ Surf. Sci. by Cherif (1991)10.1016/0168-583X(95)01478-0
/ Nucl. Instrum. Meth. Phys. Res. B by Baumvol (1996)10.1016/0039-6028(92)90529-F
/ Surf. Sci. by Cherif (1992)10.1016/0039-6028(92)90899-H
/ Surf. Sci. by Larsson (1992)10.1103/PhysRevB.47.15622
/ Phys. Rev. B by Peden (1993)10.1016/0039-6028(94)90750-1
/ Surf. Sci. by Dufour (1994)10.1016/0169-4332(86)90073-5
/ Appl. Surf. Sci. by Maillot (1986)10.1016/0039-6028(94)90326-3
/ Surf. Sci. by Rochet (1994)10.1016/0039-6028(94)90326-3
/ Surf. Sci. by Rochet (1994)10.1103/PhysRevB.62.R16255
/ Phys. Rev. B by de Almeida (2000)10.1016/0927-796X(94)90006-X
/ Mater. Sci. Eng. by Habraken (1994)10.1109/T-ED.1985.21920
/ IEEE Trans. Electron Dev. by Moslehi (1985)10.1149/1.1836712
/ J. Electrochem. Soc. by Hartig (1996)10.1016/S0169-4332(96)00803-3
/ Appl. Surf. Sci. by Fukuda (1997)-
Kamath, D.L. Kwong, Y.M. Sun, P.M. Blass, S. Whaley, J.M. White, Appl. Phys. Lett. 70 (1997) 63.
(
10.1063/1.119307
) 10.1063/1.360036
/ J. Appl. Phys. by Yao (1995)10.1063/1.111205
/ Appl. Phys. Lett. by Yao (1994)10.1116/1.583621
/ J. Vac. Sci. Technol. B by Avouris (1987)10.1063/1.365858
/ J. Appl. Phys. by Gusev (1997)10.1063/1.117687
/ Appl. Phys. Lett. by Lu (1996)10.1063/1.121520
/ Appl. Phys. Lett. by Baumvol (1998)-
Trimaille, J.-J. Ganem, L.G. Gosset, S. Rigo, I.J.R. Baumvol, F.C. Stedile, F. Rochet, G. Dufour, F. Jolly, in: E. Garfunkel, E. Gusev, A. Vul’ (Eds.), Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, Kluwer Academic Publishers, Holanda, 1998, p. 165.
(
10.1016/S0168-583X(97)00731-3
) 10.1063/1.112980
/ Appl. Phys. Lett. by Green (1994)10.1063/1.356374
/ J. Appl. Phys. by Tobin (1994)10.1149/1.1837214
/ J. Electrochem. Soc. by Kim (1996)10.1016/S0168-583X(97)00731-3
/ Nucl. Instrum. Meth. by Gosset (1998){'key': '10.1016/S0167-5729(02)00113-9_BIB83', 'first-page': '2385', 'volume': '80', 'author': 'Tang', 'year': '1996', 'journal-title': 'J. Appl. Phys.'}
/ J. Appl. Phys. by Tang (1996)10.1063/1.117645
/ Appl. Phys. Lett. by Baumvol (1996)10.1063/1.118804
/ Appl. Phys. Lett. by Baumvol (1997)10.1063/1.116135
/ Appl. Phys. Lett. by Ganem (1996)- J.-J. Ganem, private communication.
10.1063/1.125694
/ Appl. Phys. Lett. by Gusev (2000)10.1016/0039-6028(95)90033-0
/ Surf. Sci. by Dillon (1995)10.1016/0169-4332(96)00306-6
/ Appl. Surf. Sci. by Suntola (1996)10.1002/(SICI)1521-3862(199901)5:1<7::AID-CVDE7>3.0.CO;2-J
/ Chem. Vap. Dep. by Ritala (1997)10.1116/1.1379316
/ J. Vac. Sci. Technol. A by Johnson (2001)10.1063/1.1355294
/ Appl. Phys. Lett. by Kundu (2001)10.1063/1.1423763
/ J. Appl. Phys. by Kundu (2002)10.1063/1.1495066
/ J. Appl. Phys. by Kundu (2002)10.1063/1.125519
/ Appl. Phys. Lett. by Klein (1999)10.1063/1.126506
/ Appl. Phys. Lett. by Ludeke (2000)- S. Miyazaki, in: J. Morais, I.J.R. Baumvol (Eds.), Alternatives to SiO2 as Gate Dielectrics for Future Si-based Microelectronics, Materials Research Society Workshop Series, Materials Research Society, Warrendale, 2002, p. 8.
10.1063/1.1415418
/ Appl. Phys. Lett. by Quevedo-Lopez (2001)- M.C. Gilmer, et al., in: H.R. Huff, et al. (Eds.), MRS Symposia Proceedings on Ultrathin SiO2 and High-K Materials for ULSI, vol. 567, Materials Research Society, Warrendale, 1999, pp. 323–341.
10.1016/S0022-3093(02)00958-4
/ J. Non-Cryst. Sol. by Gosset (2002)10.1103/PhysRevLett.85.4120
/ Phys. Rev. Lett. by Krug (2000)10.1103/PhysRevLett.86.4714
/ Phys. Rev. Lett. by Krug (2001)10.1103/PhysRevLett.86.4713
/ Phys. Rev. Lett. by Copel (2001)10.1063/1.1367902
/ Appl. Phys. Lett. by Copel (2001)10.1063/1.99709
/ Appl. Phys. Lett. by Sawada (1988)10.1103/PhysRevB.65.121303
/ Phys. Rev. B by da Rosa (2002)10.1016/0022-3697(62)90208-1
/ J. Phys. Chem. Solids by Amsel (1962)-
Pasquarello, M.S. Hybertsen, R. Car, Nature (London) 396 (1998) 58.
(
10.1038/23908
) 10.1063/1.100105
/ Appl. Phys. Lett. by Walkup (1988)-
Bongiorno, A. Pasquarello, Phys. Rev. Lett. 88 (2002) 125901.
(
10.1103/PhysRevLett.88.125901
) 10.1063/1.125779
/ Appl. Phys. Lett. by Copel (2000)10.1103/PhysRevB.62.R13290
/ Phys. Rev. B by Busch (2000)- D. Starodub, W.H. Schulte, B.W. Busch, J. Kwo, T. Nishimura, W. Tsai, S. Sayan, C.M. Perkins, P. McIntyre, T. Gustafsson, E. Garfunkel, in: J. Morais, I.J.R. Baumvol (Eds.), Materials Research Society Workshop Series, Materials Research Society, Warrendale, 2002, p. 5.
10.1016/S0168-583X(00)00619-4
/ Nucl. Instrum. Meth. Phys. Res. B by Gustafsson (2001)10.1063/1.1419030
/ Appl. Phys. Lett. by Chang (2001)10.1063/1.1339994
/ Appl. Phys. Lett. by Jeon (2001)10.1063/1.1405808
/ Appl. Phys. Lett. by Morais (2001)10.1149/1.1471891
/ J. Electrochem. Soc. by Chen (2002)10.1063/1.1308535
/ Appl. Phys. Lett. by Qi (2000)10.1063/1.125673
/ Appl. Phys. Lett. by Wilk (2000)10.1063/1.1367288
/ Appl. Phys. Lett. by Morais (2001)10.1063/1.1448169
/ Appl. Phys. Lett. by Stesman (2002)10.1149/1.1414290
/ J. Electrochem. Soc. by da Rosa (2001)10.1149/1.1337607
/ J. Electrochem. Soc. by Landheer (2001)10.1063/1.1412284
/ Appl. Phys. Lett. by Landheer (2001)- D. Landheer, X. Wu, G.I. Sproule, S. Moisa, J. Morais, I.J.R. Baumvol, R.P. Pezzi, L. Miotti, W.N. Lennard, J.-K. Kim, in: J. Morais, I.J.R. Baumvol (Eds.), Materials Research Society Workshop Series, Materials Research Society, Warrendale, 2002, p. 10.
10.1063/1.1320464
/ Appl. Phys. Lett. by Guha (2000)10.1063/1.1383268
/ Appl. Phys. Lett. by Stemmer (2001)10.1063/1.1316073
/ Appl. Phys. Lett. by Chambers (2000)- G.N. Parsons, J.J. Chambers, D. Niu, R. Ashcraft, T.M. Klein, in: J. Morais, I.J.R. Baumvol (Eds.), Materials Research Society Workshop Series, Materials Research Society, Warrendale, 2002, p. 13.
10.1063/1.119683
/ Appl. Phys. Lett. by Choi (1997)10.1149/1.1450617
/ J. Electrochem. Soc. by Choi (2002)10.1016/S0167-9317(01)00669-4
/ Microelectron. Eng. by Campbell (2001)10.1063/1.1476397
/ Appl. Phys. Lett. by Visokay (2002)10.1063/1.1450049
/ Appl. Phys. Lett. by Sayan (2002)10.1116/1.1450584
/ J. Vac. Sci. Technol. A by Sayan (2002)10.1063/1.1502006
/ Appl. Phys. Lett. by Bastos (2002)- Y. Kim, et al., IEDM Tech. Dig. 20.2.1 (2001).
10.1063/1.1487923
/ Appl. Phys. Lett. by Cho (2002)10.1063/1.1466534
/ Appl. Phys. Lett. by Park (2002)10.1063/1.1425466
/ Appl. Phys. Lett. by Quevedo-Lopez (2001)10.1149/1.1425798
/ J. Electrochem. Soc. by Park (2002)10.1063/1.1515112
/ Appl. Phys. Lett. by Morais (2002)10.1063/1.1455155
/ J. Appl. Phys. by Kirsch (2002)10.1063/1.1385347
/ Appl. Phys. Lett. by Jeon (2001)10.1149/1.2044153
/ J. Electrochem. Soc. by Baumvol (1995)10.1063/1.1501752
/ J. Appl. Phys. by Quevedo-Lopez (2002)10.1063/1.1513662
/ Appl. Phys. Lett. by Guha (2002)10.1063/1.1510155
/ Appl. Phys. Lett. by Kang (2002)10.1063/1.1509084
/ J. Appl. Phys. by Wilde (2002)
Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 17, 2003, 4:25 p.m.) |
Deposited | 5 years, 5 months ago (March 12, 2020, 12:14 p.m.) |
Indexed | 1 year, 2 months ago (June 16, 2024, 4:33 p.m.) |
Issued | 22 years, 7 months ago (Feb. 1, 2003) |
Published | 22 years, 7 months ago (Feb. 1, 2003) |
Published Print | 22 years, 7 months ago (Feb. 1, 2003) |
@article{de_Almeida_2003, title={Reaction–diffusion in high-k dielectrics on Si}, volume={49}, ISSN={0167-5729}, url={http://dx.doi.org/10.1016/s0167-5729(02)00113-9}, DOI={10.1016/s0167-5729(02)00113-9}, number={1–3}, journal={Surface Science Reports}, publisher={Elsevier BV}, author={de Almeida, R.M.C. and Baumvol, I.J.R.}, year={2003}, month=feb, pages={1–114} }