DOI: 10.1016/s0065-2539(08)61205-6. Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors

Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors

10.1016/s0065-2539(08)61205-6

Crossref book-chapter

Elsevier

Advances in Electronics and Electron Physics (78)

Bibliography

Pucel, R. A., Haus, H. A., & Statz, H. (1975). Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors. Advances in Electronics and Electron Physics, 195â265.

Authors 3

Robert A. Pucel (first)
Hermann A. Haus (additional)
Hermann Statz (additional)

References 71 Referenced 360

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Dates

Type	When
Created	17 years, 2 months ago (May 30, 2008, 4:37 a.m.)
Deposited	6 months, 3 weeks ago (Jan. 30, 2025, 8:46 a.m.)
Indexed	1 month, 2 weeks ago (July 2, 2025, 3:29 p.m.)
Issued	50 years, 7 months ago (Jan. 1, 1975)
Published	50 years, 7 months ago (Jan. 1, 1975)
Published Print	50 years, 7 months ago (Jan. 1, 1975)

Funders 0

None

BibTeX

@inbook{Pucel_1975, title={Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors}, ISBN={9780120145386}, ISSN={0065-2539}, url={http://dx.doi.org/10.1016/s0065-2539(08)61205-6}, DOI={10.1016/s0065-2539(08)61205-6}, booktitle={Advances in Electronics and Electron Physics}, publisher={Elsevier}, author={Pucel, Robert A. and Haus, Hermann A. and Statz, Hermann}, year={1975}, pages={195–265} }

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