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Surface Science (78)
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Shen, T.-C., Steckel, J. A., & Jordan, K. D. (2000). Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface. Surface Science, 446(3), 211–218.

Authors 3
  1. T.-C. Shen (first)
  2. J.A. Steckel (additional)
  3. K.D. Jordan (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 25, 2002, 8:27 p.m.)
Deposited 6 years, 4 months ago (April 16, 2019, 6:54 p.m.)
Indexed 1 year, 6 months ago (Feb. 6, 2024, 9:59 p.m.)
Issued 25 years, 6 months ago (Feb. 1, 2000)
Published 25 years, 6 months ago (Feb. 1, 2000)
Published Print 25 years, 6 months ago (Feb. 1, 2000)
Funders 0

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@article{Shen_2000, title={Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface}, volume={446}, ISSN={0039-6028}, url={http://dx.doi.org/10.1016/s0039-6028(99)01147-4}, DOI={10.1016/s0039-6028(99)01147-4}, number={3}, journal={Surface Science}, publisher={Elsevier BV}, author={Shen, T.-C. and Steckel, J.A. and Jordan, K.D.}, year={2000}, month=feb, pages={211–218} }