DOI: 10.1016/s0038-1101(96)00161-x. GaN FETs for microwave and high-temperature applications

GaN FETs for microwave and high-temperature applications

10.1016/s0038-1101(96)00161-x

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Binari, S. C., Doverspike, K., Kelner, G., Dietrich, H. B., & Wickenden, A. E. (1997). GaN FETs for microwave and high-temperature applications. Solid-State Electronics, 41(2), 177â180.

Authors 5

Steven C. Binari (first)
K. Doverspike (additional)
G. Kelner (additional)
H.B. Dietrich (additional)
A.E. Wickenden (additional)

References 18 Referenced 129

10.1063/1.358463 / J. Appl. Phys. by Morkoç (1994)
10.1063/1.106798 / Appl. Phys. Lett. by Khan (1992)
{'key': '10.1016/S0038-1101(96)00161-X_BIB3', 'series-title': '1994 Int. Sym. Compound Semiconductors Proc.', 'first-page': '459', 'author': 'Binari', 'year': '1995'} / 1994 Int. Sym. Compound Semiconductors Proc. by Binari (1995)
M. A. Khan, Q. Chen, C. Sun and M. Shur, presented at 1995 Topical Workshop on III–V Nitrides.
{'key': '10.1016/S0038-1101(96)00161-X_BIB5', 'series-title': '1994 Int. Sym. Compound Semiconductors Proc.', 'first-page': '101', 'author': 'Doverspike', 'year': '1995'} / 1994 Int. Sym. Compound Semiconductors Proc. by Doverspike (1995)
10.1063/1.360712 / J. Appl. Phys. by Binari (1995)
10.1063/1.110417 / Appl. Phys. Lett. by Hacke (1993)
10.1049/el:19940565 / Electronics Lett. by Binari (1994)
E. V. Kalinina, N. I. Kuznetsov, V. A. Dmitriev, K. Irvine and C. H. Carter, presented at 1995 Elec. Mat. Conf.
W. Kim et al., presented at 1995 Topical Workshop on III–V Nitrides.
L. Wang et al., presented at 1995 Elec. Mat. Conf.
A. T. Ping and I. Adesida, presented at 1995 Elec. Mat. Conf.
H. Morkoç, private communication.
{'key': '10.1016/S0038-1101(96)00161-X_BIB14', 'first-page': '136', 'volume': '95-21', 'author': 'Binari', 'year': '1995'} by Binari (1995)
{'key': '10.1016/S0038-1101(96)00161-X_BIB15', 'first-page': '599', 'author': 'Allen', 'year': '1995', 'journal-title': 'ICSCRM-95 Digest'} / ICSCRM-95 Digest by Allen (1995)
10.1109/55.334666 / IEEE Electron Dev. Lett. by Sriram (1994)
10.1109/55.320983 / IEEE Electron Dev. Lett. by Weitzel (1994)
10.1063/1.113579 / Appl. Phys. Lett. by Khan (1995)

Dates

Type	When
Created	22 years, 3 months ago (April 30, 2003, 8:39 p.m.)
Deposited	6 years, 3 months ago (April 29, 2019, 8:20 a.m.)
Indexed	4 months, 3 weeks ago (March 30, 2025, 6:46 a.m.)
Issued	28 years, 6 months ago (Feb. 1, 1997)
Published	28 years, 6 months ago (Feb. 1, 1997)
Published Print	28 years, 6 months ago (Feb. 1, 1997)

Funders 0

None

BibTeX

@article{Binari_1997, title={GaN FETs for microwave and high-temperature applications}, volume={41}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/s0038-1101(96)00161-x}, DOI={10.1016/s0038-1101(96)00161-x}, number={2}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Binari, Steven C. and Doverspike, K. and Kelner, G. and Dietrich, H.B. and Wickenden, A.E.}, year={1997}, month=feb, pages={177–180} }

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