DOI: 10.1016/s0038-1101(02)00117-x. Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices

Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices

10.1016/s0038-1101(02)00117-x

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Krishnamoorthy, S., Iliadis, A. A., Inumpudi, A., Choopun, S., Vispute, R. D., & Venkatesan, T. (2002). Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices. Solid-State Electronics, 46(10), 1633â1637.

Authors 6

Soumya Krishnamoorthy (first)
Agis A Iliadis (additional)
Aravind Inumpudi (additional)
Supab Choopun (additional)
Ratnakar D Vispute (additional)
Tirumalai Venkatesan (additional)

References 13 Referenced 95

10.1063/1.373088 / J Appl Phys / Piezoelectric contributions to the electrical behavior of ZnO varistors by Verghese (2000)
{'key': '10.1016/S0038-1101(02)00117-X_BIB2', 'series-title': 'Tech Digest IEEE Solid–State Sensor Actuator Workshop, 41-5', 'first-page': 'xi+212', 'article-title': 'Patterning of ZnO thin films', 'author': 'Chang', 'year': '1999'} / Tech Digest IEEE Solid–State Sensor Actuator Workshop, 41-5 / Patterning of ZnO thin films by Chang (1999)
10.1063/1.126703 / Appl Phys Lett / Exciton spectra of ZnO epitaxial layers on lattice-matched substrates by Makino (2000)
10.1063/1.119006 / Appl Phys Lett / High quality crystalline ZnO buffer layers on sapphire for pulsed laser deposition of nitrides by Vispute (1997)
10.1109/55.830963 / IEEE Electron Dev Lett / Novel AlInSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature by Su (2000)
{'key': '10.1016/S0038-1101(02)00117-X_BIB6', 'first-page': '75', 'article-title': 'Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire', 'volume': '3947', 'author': 'Choopun', 'year': '1999', 'journal-title': 'Appl Phys Lett'} / Appl Phys Lett / Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire by Choopun (1999)
10.1063/1.121384 / Appl Phys Lett by Ohmoto (1998)
10.1063/1.125340 / Appl Phys Lett by Sharma (1999)
10.1016/S0040-6090(99)01077-9 / Thin Solid Films / Improved ITO thin films with a thin ZnO buffer layer by Sun (2000)
10.1557/PROC-623-359 / Mat Res Soc Symp Proc / Single quantum well heterostructures of MgZnO/ZnO/MgZnO on c-plane sapphire by Choopun (2000)
10.1063/1.1289066 / Appl Phys Lett / Room temperature luminescence of excitons in ZnO/(Mg,Zn)O multiple quantum wells on lattice-matched substrates by Makino (2000)
{'key': '10.1016/S0038-1101(02)00117-X_BIB12', 'series-title': 'Properties of III–V Quantum Wells and Superlattices', 'first-page': '152', 'volume': 'Vol. 15', 'author': 'Bajaj', 'year': '1996'} / Properties of III–V Quantum Wells and Superlattices by Bajaj (1996)
10.1103/PhysRevB.28.7381 / Phys Rev B by Dawson (1983)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 14, 2002, 5:51 p.m.)
Deposited	6 years, 4 months ago (May 1, 2019, 6:21 a.m.)
Indexed	1 year, 6 months ago (Feb. 23, 2024, 10:45 a.m.)
Issued	22 years, 11 months ago (Oct. 1, 2002)
Published	22 years, 11 months ago (Oct. 1, 2002)
Published Print	22 years, 11 months ago (Oct. 1, 2002)

Funders 0

None

BibTeX

@article{Krishnamoorthy_2002, title={Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices}, volume={46}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/s0038-1101(02)00117-x}, DOI={10.1016/s0038-1101(02)00117-x}, number={10}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Krishnamoorthy, Soumya and Iliadis, Agis A and Inumpudi, Aravind and Choopun, Supab and Vispute, Ratnakar D and Venkatesan, Tirumalai}, year={2002}, month=oct, pages={1633–1637} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        23
      ]
    ],
    "date-time": "2024-02-23T15:45:45Z",
    "timestamp": 1708703145452
  },
  "reference-count": 13,
  "publisher": "Elsevier BV",
  "issue": "10",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2002,
            10,
            1
          ]
        ],
        "date-time": "2002-10-01T00:00:00Z",
        "timestamp": 1033430400000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://www.elsevier.com/tdm/userlicense/1.0/"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2002,
        10
      ]
    ]
  },
  "DOI": "10.1016/s0038-1101(02)00117-x",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        10,
        14
      ]
    ],
    "date-time": "2002-10-14T21:51:46Z",
    "timestamp": 1034632306000
  },
  "page": "1633-1637",
  "source": "Crossref",
  "is-referenced-by-count": 95,
  "title": "Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices",
  "prefix": "10.1016",
  "volume": "46",
  "author": [
    {
      "given": "Soumya",
      "family": "Krishnamoorthy",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Agis A",
      "family": "Iliadis",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Aravind",
      "family": "Inumpudi",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Supab",
      "family": "Choopun",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Ratnakar D",
      "family": "Vispute",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Tirumalai",
      "family": "Venkatesan",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "78",
  "reference": [
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB1",
      "doi-asserted-by": "crossref",
      "first-page": "4430",
      "DOI": "10.1063/1.373088",
      "article-title": "Piezoelectric contributions to the electrical behavior of ZnO varistors",
      "volume": "87",
      "author": "Verghese",
      "year": "2000",
      "journal-title": "J Appl Phys"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB2",
      "series-title": "Tech Digest IEEE Solid\u2013State Sensor Actuator Workshop, 41-5",
      "first-page": "xi+212",
      "article-title": "Patterning of ZnO thin films",
      "author": "Chang",
      "year": "1999"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB3",
      "doi-asserted-by": "crossref",
      "first-page": "3549",
      "DOI": "10.1063/1.126703",
      "article-title": "Exciton spectra of ZnO epitaxial layers on lattice-matched substrates",
      "volume": "76",
      "author": "Makino",
      "year": "2000",
      "journal-title": "Appl Phys Lett"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB4",
      "doi-asserted-by": "crossref",
      "first-page": "2735",
      "DOI": "10.1063/1.119006",
      "article-title": "High quality crystalline ZnO buffer layers on sapphire for pulsed laser deposition of nitrides",
      "volume": "70",
      "author": "Vispute",
      "year": "1997",
      "journal-title": "Appl Phys Lett"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB5",
      "doi-asserted-by": "crossref",
      "first-page": "146",
      "DOI": "10.1109/55.830963",
      "article-title": "Novel AlInSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature",
      "volume": "21",
      "author": "Su",
      "year": "2000",
      "journal-title": "IEEE Electron Dev Lett"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB6",
      "first-page": "75",
      "article-title": "Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire",
      "volume": "3947",
      "author": "Choopun",
      "year": "1999",
      "journal-title": "Appl Phys Lett"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB7",
      "doi-asserted-by": "crossref",
      "first-page": "2466",
      "DOI": "10.1063/1.121384",
      "volume": "72",
      "author": "Ohmoto",
      "year": "1998",
      "journal-title": "Appl Phys Lett"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB8",
      "doi-asserted-by": "crossref",
      "first-page": "3327",
      "DOI": "10.1063/1.125340",
      "volume": "75",
      "author": "Sharma",
      "year": "1999",
      "journal-title": "Appl Phys Lett"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB9",
      "doi-asserted-by": "crossref",
      "first-page": "75",
      "DOI": "10.1016/S0040-6090(99)01077-9",
      "article-title": "Improved ITO thin films with a thin ZnO buffer layer",
      "volume": "360",
      "author": "Sun",
      "year": "2000",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB10",
      "doi-asserted-by": "crossref",
      "first-page": "359",
      "DOI": "10.1557/PROC-623-359",
      "article-title": "Single quantum well heterostructures of MgZnO/ZnO/MgZnO on c-plane sapphire",
      "volume": "623",
      "author": "Choopun",
      "year": "2000",
      "journal-title": "Mat Res Soc Symp Proc"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB11",
      "doi-asserted-by": "crossref",
      "first-page": "975",
      "DOI": "10.1063/1.1289066",
      "article-title": "Room temperature luminescence of excitons in ZnO/(Mg,Zn)O multiple quantum wells on lattice-matched substrates",
      "volume": "77",
      "author": "Makino",
      "year": "2000",
      "journal-title": "Appl Phys Lett"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB12",
      "series-title": "Properties of III\u2013V Quantum Wells and Superlattices",
      "first-page": "152",
      "volume": "Vol. 15",
      "author": "Bajaj",
      "year": "1996"
    },
    {
      "key": "10.1016/S0038-1101(02)00117-X_BIB13",
      "doi-asserted-by": "crossref",
      "first-page": "7381",
      "DOI": "10.1103/PhysRevB.28.7381",
      "volume": "28",
      "author": "Dawson",
      "year": "1983",
      "journal-title": "Phys Rev B"
    }
  ],
  "container-title": "Solid-State Electronics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.elsevier.com/content/article/PII:S003811010200117X?httpAccept=text/xml",
      "content-type": "text/xml",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://api.elsevier.com/content/article/PII:S003811010200117X?httpAccept=text/plain",
      "content-type": "text/plain",
      "content-version": "vor",
      "intended-application": "text-mining"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2019,
        5,
        1
      ]
    ],
    "date-time": "2019-05-01T10:21:47Z",
    "timestamp": 1556706107000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://linkinghub.elsevier.com/retrieve/pii/S003811010200117X"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2002,
        10
      ]
    ]
  },
  "references-count": 13,
  "journal-issue": {
    "issue": "10",
    "published-print": {
      "date-parts": [
        [
          2002,
          10
        ]
      ]
    }
  },
  "alternative-id": [
    "S003811010200117X"
  ],
  "URL": "http://dx.doi.org/10.1016/S0038-1101(02)00117-X",
  "relation": {},
  "ISSN": [
    "0038-1101"
  ],
  "subject": [],
  "container-title-short": "Solid-State Electronics",
  "published": {
    "date-parts": [
      [
        2002,
        10
      ]
    ]
  }
}