DOI: 10.1016/s0038-1101(01)00175-7. Energy-band parameters at the GaAs– and GaN

Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces

10.1016/s0038-1101(01)00175-7

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Lay, T. S., Hong, M., Kwo, J., Mannaerts, J. P., Hung, W. H., & Huang, D. J. (2001). Energy-band parameters at the GaAsâ and GaNâGa2O3(Gd2O3) interfaces. Solid-State Electronics, 45(9), 1679â1682.

Authors 6

T.S. Lay (first)
M. Hong (additional)
J. Kwo (additional)
J.P. Mannaerts (additional)
W.H. Hung (additional)
D.J. Huang (additional)

References 13 Referenced 82

10.1109/16.557709 / IEEE Trans Electron Dev by Passlack (1997)
10.1016/S0038-1101(97)00181-0 / Solid-State Electron by Ren (1997)
10.1109/55.704409 / IEEE Electron Dev Lett by Ren (1998)
10.1116/1.590083 / J Vac Sci Technol B by Hong (1998)
10.1063/1.122927 / Appl Phys Lett by Ren (1998)
Wolf S. Silicon processing for the VLSI era, vol. 3. California: Lattice Press; 1995
10.1063/1.321994 / J Appl Phys by Lewicki (1975)
{'key': '10.1016/S0038-1101(01)00175-7_BIB8', 'series-title': 'Device electronics for integrated circuits', 'author': 'Muller', 'year': '1977'} / Device electronics for integrated circuits by Muller (1977)
{'key': '10.1016/S0038-1101(01)00175-7_BIB9', 'series-title': 'Physics of semiconductor devices', 'author': 'Sze', 'year': '1981'} / Physics of semiconductor devices by Sze (1981)
10.1109/16.772500 / IEEE Trans Electron Dev by Yang (1999)
Casey Jr HC, Fountain GG, Alley RG, Keller BP, DenBaars SP. Appl Phys Lett 1996;68(13):1850-1852 (10.1063/1.116034)
10.1063/1.1655276 / Appl Phys Lett by Pankove (1974)
10.1116/1.591472 / J Vac Sci Technol B by Robertson (2000)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 31, 2002, 11:53 a.m.)
Deposited	6 years, 4 months ago (April 27, 2019, 12:59 a.m.)
Indexed	3 months ago (June 1, 2025, 6:27 p.m.)
Issued	24 years ago (Sept. 1, 2001)
Published	24 years ago (Sept. 1, 2001)
Published Print	24 years ago (Sept. 1, 2001)

Funders 0

None

BibTeX

@article{Lay_2001, title={Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces}, volume={45}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/s0038-1101(01)00175-7}, DOI={10.1016/s0038-1101(01)00175-7}, number={9}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Lay, T.S. and Hong, M. and Kwo, J. and Mannaerts, J.P. and Hung, W.H. and Huang, D.J.}, year={2001}, month=sep, pages={1679–1682} }

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