DOI: 10.1016/s0038-1101(00)00204-5. Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?

Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?

10.1016/s0038-1101(00)00204-5

Crossref journal-article

Elsevier BV

Solid-State Electronics (78)

Bibliography

Berg, J., Bengtsson, S., & Lundgren, P. (2000). Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells? Solid-State Electronics, 44(12), 2247â2252.

Authors 3

Jonas Berg (first)
Stefan Bengtsson (additional)
Per Lundgren (additional)

References 19 Referenced 32

Van der Wagt P, Seabaugh A, Beam E. RTD/HFET low standby power SRAM gain cell. Int Electron Dev Meeting 1996. p. 425–8 (10.1109/IEDM.1996.553618)
The International Technology Roadmap for Semiconductors, 1999 [www.itrs.net/ntrs/publntrs.nsf]
Comfort JH. DRAM Technology: outlook and challenges. IEEE VLSI and CAD symposium, 1999. p. 182–6 (10.1109/ICVC.1999.820868)
10.1109/5.752517 / Proc IEEE / A new RTD-FET logic family by Mathews (1999)
10.1126/science.286.5444.1550 / Science / Large on–off ratios and negative differential resistance in a molecular electronic device by Chen (1999)
10.1109/4.127345 / IEEE J Sol State Circ / Multivalued SRAM cell using resonant tunneling diodes by Wei (1992)
10.1109/16.202778 / IEEE Trans El Dev / Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications by Chang (1993)
10.1143/JJAP.34.1213 / Jpn J Appl Phys / Analysis of switching time of monostable–bistable transition logic elements based on simple model calculation by Maezawa (1995)
10.1109/43.370427 / IEEE Trans CAD Integ Circ Syst / New RTD large-signal DC model suitable for pspice by Yan (1995)
10.1109/55.491835 / IEEE El Dev Lett / Physics-based RTD current–voltage equation by Schulman (1996)
10.1109/4.711333 / IEEE J Sol State Circ / A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter by Broekaert (1998)
10.1109/43.406702 / IEEE Trans CAD Integ Circ Syst / Modeling hysteric current–voltage characteristics for resonant tunneling diodes by Shieh (1995)
10.1109/5.752516 / Proc IEEE / Tunneling-based SRAM by Van der Wagt (1999)
10.1063/1.122419 / Appl Phys Lett / Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes by Rommel (1998)
10.1109/5.752520 / Proc IEEE / Molecular scale electronics by Reed (1999)
10.1063/1.123035 / Appl Phys Lett / Tunnel diodes fabricated from CdSe nanocrystal monolayers by Kim (1999)
10.1021/jo962336q / J Organ Chem / Rapid solution and solid phase syntheses of oligo(1,4.phenylene-ethynylene)s with thioester termini: molecular scale wires with alligator clips. Derivation of iterative reaction effeciencies on a polymer support by Jones (1997)
Gentile SP. Basic theory and application of tunnel diodes. Princeton: D. van Nostrand, 1962
10.1063/1.348961 / J Appl Phys / A parametric study of extrinsic bistability in the current–voltage curves of resonant-tunneling diodes by Jogai (1991)

Dates

Type	When
Created	23 years ago (July 25, 2002, 1:32 p.m.)
Deposited	8 months, 2 weeks ago (Dec. 4, 2024, 2:40 p.m.)
Indexed	3 months, 3 weeks ago (April 25, 2025, 2:45 a.m.)
Issued	24 years, 8 months ago (Dec. 1, 2000)
Published	24 years, 8 months ago (Dec. 1, 2000)
Published Print	24 years, 8 months ago (Dec. 1, 2000)

Funders 0

None

BibTeX

@article{Berg_2000, title={Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?}, volume={44}, ISSN={0038-1101}, url={http://dx.doi.org/10.1016/s0038-1101(00)00204-5}, DOI={10.1016/s0038-1101(00)00204-5}, number={12}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Berg, Jonas and Bengtsson, Stefan and Lundgren, Per}, year={2000}, month=dec, pages={2247–2252} }

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