DOI: 10.1016/s0038-1098(99)00108-8. Phonon structure of InN grown by atomic layer epitaxy

Phonon structure of InN grown by atomic layer epitaxy

10.1016/s0038-1098(99)00108-8

Crossref journal-article

Elsevier BV

Solid State Communications (78)

Bibliography

Inushima, T., Shiraishi, T., & Davydov, V. Y. (1999). Phonon structure of InN grown by atomic layer epitaxy. Solid State Communications, 110(9), 491â495.

Authors 3

T Inushima (first)
T Shiraishi (additional)
V.Yu Davydov (additional)

References 20 Referenced 116

10.1143/JJAP.35.L74 / Jpn. J. Appl. Phys. by Nakamura (1996)
10.1063/1.1654051 / Appl. Phys. Lett. by Hovel (1972)
10.1002/crat.19770120603 / Krist and Tech. by Marashina (1977)
10.1143/JJAP.27.790 / Jpn J. Appl. Phys. by Igarashi (1988)
10.1063/1.100870 / Appl. Phys. Lett. by Wakahara (1989)
10.1016/0022-0248(91)91125-T / J. Cryst. Growth by Hoke (1991)
10.1557/PROC-222-169 / Mat. Res. Soc. Symp. Proc. by Higuchi (1991)
10.1016/S0022-0248(98)00261-9 / J. Cryst. Growth by Matsumura (1998)
{'key': '10.1016/S0038-1098(99)00108-8_BIB9', 'first-page': '401', 'volume': '142', 'author': 'Inushima', 'year': '1996', 'journal-title': 'Inst. Phys.'} / Inst. Phys. by Inushima (1996)
T. Inushima, et al., in: E. Hasegawa (Ed.), Proc. 7th Int. Conf. on Indium Phosphide and Related Materials, Sapporo, 1995, p. 187. (10.1109/ICIPRM.1995.522110)
10.1016/0038-1098(92)90151-X / Solid State Commun. by Guo (1992)
10.1063/1.322064 / J. Appl. Phys. by Osamura (1975)
10.1063/1.116949 / Appl. Phys. Lett. by Kwon (1996)
10.1063/1.114446 / Appl. Phys. Lett. by Perlin (1995)
10.1016/0038-1098(77)90899-7 / Solid State Commun. by Pinczuk (1977)
10.1103/PhysRevB.58.12899 / Phys. Rev. B by Davydov (1998)
10.1103/PhysRev.115.1493 / Phys. Rev. by Birman (1959)
10.1143/JJAP.37.4870 / Jpn. J. Appl. Phys. by Chen (1998)
10.1063/1.356650 / J. Appl. Phys. by Chin (1994)
10.1103/PhysRevB.38.1541 / Phys. Rev. B by Tsai (1988)

Dates

Type	When
Created	23 years, 1 month ago (July 25, 2002, 8:56 p.m.)
Deposited	6 years, 4 months ago (April 16, 2019, 4:53 a.m.)
Indexed	1 month ago (July 31, 2025, 11:45 p.m.)
Issued	26 years, 4 months ago (May 1, 1999)
Published	26 years, 4 months ago (May 1, 1999)
Published Print	26 years, 4 months ago (May 1, 1999)

Funders 0

None

BibTeX

@article{Inushima_1999, title={Phonon structure of InN grown by atomic layer epitaxy}, volume={110}, ISSN={0038-1098}, url={http://dx.doi.org/10.1016/s0038-1098(99)00108-8}, DOI={10.1016/s0038-1098(99)00108-8}, number={9}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Inushima, T and Shiraishi, T and Davydov, V.Yu}, year={1999}, month=may, pages={491–495} }

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