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Optics & Laser Technology (78)
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Mizunami, T., & Toyama, N. (2003). ArF-excimer-laser annealing of 3C–SiC films—diode characteristics and numerical simulation. Optics & Laser Technology, 35(6), 451–456.

Authors 2
  1. T. Mizunami (first)
  2. N. Toyama (additional)
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Dates
Type When
Created 22 years, 3 months ago (April 30, 2003, 8:30 p.m.)
Deposited 6 years, 5 months ago (March 21, 2019, 1:58 p.m.)
Indexed 2 years, 1 month ago (July 31, 2023, 4:50 a.m.)
Issued 21 years, 11 months ago (Sept. 1, 2003)
Published 21 years, 11 months ago (Sept. 1, 2003)
Published Print 21 years, 11 months ago (Sept. 1, 2003)
Funders 0

None

@article{Mizunami_2003, title={ArF-excimer-laser annealing of 3C–SiC films—diode characteristics and numerical simulation}, volume={35}, ISSN={0030-3992}, url={http://dx.doi.org/10.1016/s0030-3992(03)00052-5}, DOI={10.1016/s0030-3992(03)00052-5}, number={6}, journal={Optics & Laser Technology}, publisher={Elsevier BV}, author={Mizunami, T. and Toyama, N.}, year={2003}, month=sep, pages={451–456} }