DOI: 10.1016/s0026-2714(99)00051-7. Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

10.1016/s0026-2714(99)00051-7

Crossref journal-article

Elsevier BV

Microelectronics Reliability (78)

Bibliography

Degraeve, R., Kaczer, B., & Groeseneken, G. (1999). Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction. Microelectronics Reliability, 39(10), 1445â1460.

Authors 3

R. Degraeve (first)
B. Kaczer (additional)
G. Groeseneken (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 25, 2002, 6:48 p.m.)
Deposited	8 months, 3 weeks ago (Dec. 5, 2024, 3:33 p.m.)
Indexed	2 weeks, 6 days ago (Aug. 6, 2025, 8:40 a.m.)
Issued	25 years, 10 months ago (Oct. 1, 1999)
Published	25 years, 10 months ago (Oct. 1, 1999)
Published Print	25 years, 10 months ago (Oct. 1, 1999)

Funders 0

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BibTeX

@article{Degraeve_1999, title={Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction}, volume={39}, ISSN={0026-2714}, url={http://dx.doi.org/10.1016/s0026-2714(99)00051-7}, DOI={10.1016/s0026-2714(99)00051-7}, number={10}, journal={Microelectronics Reliability}, publisher={Elsevier BV}, author={Degraeve, R. and Kaczer, B. and Groeseneken, G.}, year={1999}, month=oct, pages={1445–1460} }

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