Crossref journal-article
Elsevier BV
Microelectronics Reliability (78)
Bibliography

Verkleij, D. (1998). The use of the focused ion beam in failure analysis. Microelectronics Reliability, 38(6–8), 869–876.

Authors 1
  1. D. Verkleij (first)
References 4 Referenced 11
  1. {'key': '10.1016/S0026-2714(98)00126-7_BIB1', 'series-title': 'Proc. ISTFA', 'first-page': '373', 'article-title': 'Contrast mechanisms in focused ion beam imaging', 'author': 'Olson', 'year': '1992'} / Proc. ISTFA / Contrast mechanisms in focused ion beam imaging by Olson (1992)
  2. Dingle T., Bickford C.U., Cook D.B., Do D.D. Gerlach R.L., Li J.Z. and Rasmussen J. The integration of a high performance quadruple SIMS facility with a Ga+ LMIS based FIB instrument Proc. of the 10th international conference on secondary mass spectrometry pp 517 – 520.
  3. 10.1116/1.585694 / J. Vac. Sci. Technol. B / Applications of focused ion beam technique to failure analysis of very large scale integration: A review by Nikawa (1991)
  4. 10.1016/S0167-9317(97)00093-2 / Microelectronic Engineering / Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections by Pantel (1997)
Dates
Type When
Created 23 years ago (July 25, 2002, 2:49 p.m.)
Deposited 6 years, 4 months ago (April 18, 2019, noon)
Indexed 1 year, 9 months ago (Nov. 18, 2023, 5:52 a.m.)
Issued 27 years, 2 months ago (June 1, 1998)
Published 27 years, 2 months ago (June 1, 1998)
Published Print 27 years, 2 months ago (June 1, 1998)
Funders 0

None

@article{Verkleij_1998, title={The use of the focused ion beam in failure analysis}, volume={38}, ISSN={0026-2714}, url={http://dx.doi.org/10.1016/s0026-2714(98)00126-7}, DOI={10.1016/s0026-2714(98)00126-7}, number={6–8}, journal={Microelectronics Reliability}, publisher={Elsevier BV}, author={Verkleij, D.}, year={1998}, month=jun, pages={869–876} }