Crossref
journal-article
Elsevier BV
Microelectronics Reliability (78)
References
4
Referenced
11
{'key': '10.1016/S0026-2714(98)00126-7_BIB1', 'series-title': 'Proc. ISTFA', 'first-page': '373', 'article-title': 'Contrast mechanisms in focused ion beam imaging', 'author': 'Olson', 'year': '1992'}
/ Proc. ISTFA / Contrast mechanisms in focused ion beam imaging by Olson (1992)- Dingle T., Bickford C.U., Cook D.B., Do D.D. Gerlach R.L., Li J.Z. and Rasmussen J. The integration of a high performance quadruple SIMS facility with a Ga+ LMIS based FIB instrument Proc. of the 10th international conference on secondary mass spectrometry pp 517 – 520.
10.1116/1.585694
/ J. Vac. Sci. Technol. B / Applications of focused ion beam technique to failure analysis of very large scale integration: A review by Nikawa (1991)10.1016/S0167-9317(97)00093-2
/ Microelectronic Engineering / Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections by Pantel (1997)
Dates
Type | When |
---|---|
Created | 23 years ago (July 25, 2002, 2:49 p.m.) |
Deposited | 6 years, 4 months ago (April 18, 2019, noon) |
Indexed | 1 year, 9 months ago (Nov. 18, 2023, 5:52 a.m.) |
Issued | 27 years, 2 months ago (June 1, 1998) |
Published | 27 years, 2 months ago (June 1, 1998) |
Published Print | 27 years, 2 months ago (June 1, 1998) |
@article{Verkleij_1998, title={The use of the focused ion beam in failure analysis}, volume={38}, ISSN={0026-2714}, url={http://dx.doi.org/10.1016/s0026-2714(98)00126-7}, DOI={10.1016/s0026-2714(98)00126-7}, number={6–8}, journal={Microelectronics Reliability}, publisher={Elsevier BV}, author={Verkleij, D.}, year={1998}, month=jun, pages={869–876} }