DOI: 10.1016/s0022-3093(99)00735-8. High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application

High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application

10.1016/s0022-3093(99)00735-8

Crossref journal-article

Elsevier BV

Journal of Non-Crystalline Solids (78)

Bibliography

Korevaar, B. A., Adriaenssens, G. J., Smets, A. H. M., Kessels, W. M. M., Song, H.-Z., van de Sanden, M. C. M., & Schram, D. C. (2000). High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application. Journal of Non-Crystalline Solids, 266â269, 380â384.

Authors 7

B.A Korevaar (first)
G.J Adriaenssens (additional)
A.H.M Smets (additional)
W.M.M Kessels (additional)
H.-Z Song (additional)
M.C.M van de Sanden (additional)
D.C Schram (additional)

References 17 Referenced 39

W.M.M. Kessels, A.H.M. Smets, B.A. Korevaar, G.J. Adriaenssens, M.C.M. van de Sanden, D.C. Schram, Mater. Res. Soc. Symp. Soc. 557 (1999) (to appear) (10.1557/PROC-557-25)
10.1088/0741-3335/41/3A/030 / Plasma Phys. Control. Fusion by van de Sanden (1999)
10.1016/S0022-3093(98)00028-3 / J. Non-Cryst. Solids by Kessels (1998)
R.J. Severens, W.M.M. Kessels, L. Gabella, F. van de Pas, M.C.M. van de Sanden, D.C. Schram, in: Proceedings of the 13th International Symposium on Plasma Chemicals, Beijing, 1997, p. 1059
W.M.M. Kessels, C.M. Leewis, M.C.M. van de Sanden, D.C. Schram, J. Appl. Phys. 86 (1999) 4029 (10.1063/1.371324)
10.1103/PhysRevB.39.10196 / Phys. Rev. B by Seynhaeve (1989)
10.1557/PROC-507-529 / Mater. Res. Soc. Symp. Proc. by Kessels (1998)
10.1103/PhysRevB.28.4678 / Phys. Rev. B by Dersch (1983)
10.1103/PhysRevB.16.2362 / Phys. Rev. B by Schmidlin (1977)
10.1063/1.359521 / J. Appl. Phys. by Yan (1995)
10.1063/1.348897 / J. Appl. Phys. by Mahan (1991)
10.1063/1.112882 / Appl. Phys. Lett. by Roca i Cabarrocas (1994)
10.1016/S0022-3093(98)00453-0 / J. Non-Cryst. Solids by Hamers (1998)
10.1016/S0022-0248(98)00061-X / J. Cryst. Growth by Rosenblad (1998)
10.1557/PROC-258-39 / Mater. Res. Soc. Symp. Proc. by Ganguly (1992)
10.1557/PROC-70-3 / Mater. Res. Soc. Symp, Soc. by Gallagher (1986)
10.1016/0039-6028(89)90106-4 / Surf. Sci. by Perrin (1989)

Dates

Type	When
Created	22 years, 4 months ago (April 7, 2003, 10:26 a.m.)
Deposited	5 years, 7 months ago (Jan. 8, 2020, 11:04 a.m.)
Indexed	1 year, 1 month ago (July 4, 2024, 7:56 p.m.)
Issued	25 years, 3 months ago (May 1, 2000)
Published	25 years, 3 months ago (May 1, 2000)
Published Print	25 years, 3 months ago (May 1, 2000)

Funders 0

None

BibTeX

@article{Korevaar_2000, title={High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application}, volume={266–269}, ISSN={0022-3093}, url={http://dx.doi.org/10.1016/s0022-3093(99)00735-8}, DOI={10.1016/s0022-3093(99)00735-8}, journal={Journal of Non-Crystalline Solids}, publisher={Elsevier BV}, author={Korevaar, B.A and Adriaenssens, G.J and Smets, A.H.M and Kessels, W.M.M and Song, H.-Z and van de Sanden, M.C.M and Schram, D.C}, year={2000}, month=may, pages={380–384} }

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