Crossref
journal-article
Elsevier BV
Journal of Crystal Growth (78)
References
6
Referenced
51
10.1016/0022-0248(93)90605-V
/ J. Crystal Growth by Strite (1993)10.1063/1.353906
/ J. Appl. Phys. by Guo (1993)10.1116/1.588793
/ J. Vac. Sci. Technol. B by Ambacher (1996)10.1103/PhysRevB.54.R8381
/ Phys Rev. B by Schikora (1996)- W.A. Harrison, Electronic Structure and Properties of Solids, ch. 7, W.P. Freeman and Co., San Francisco, 1980, p. 176.
10.1063/1.117193
/ Appl. Phys. Lett. by Goldman (1996)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 25, 2002, 10:51 a.m.) |
Deposited | 6 years, 4 months ago (April 23, 2019, 12:28 a.m.) |
Indexed | 1 year, 1 month ago (July 5, 2024, 2:41 p.m.) |
Issued | 26 years, 3 months ago (May 1, 1999) |
Published | 26 years, 3 months ago (May 1, 1999) |
Published Print | 26 years, 3 months ago (May 1, 1999) |
@article{Lima_1999, title={Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy}, volume={201–202}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/s0022-0248(98)01359-1}, DOI={10.1016/s0022-0248(98)01359-1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Lima, A.P and Tabata, A and Leite, J.R and Kaiser, S and Schikora, D and Schöttker, B and Frey, T and As, D.J and Lischka, K}, year={1999}, month=may, pages={396–398} }