DOI: 10.1016/s0022-0248(97)00103-6. Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes

Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes

10.1016/s0022-0248(97)00103-6

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Suhara, M., Nagao, C., Honji, H., Miyamoto, Y., Furuya, K., & Takemura, R. (1997). Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes. Journal of Crystal Growth, 179(1â2), 18â25.

Authors 6

Michihiko Suhara (first)
Chuma Nagao (additional)
Hidetaka Honji (additional)
Yasuyuki Miyamoto (additional)
Kazuhito Furuya (additional)
Riichiro Takemura (additional)

References 16 Referenced 10

10.1143/JJAP.27.L12 / Jpn. J. Appl. Phys. by Nishinaga (1988)
10.1016/0022-0248(90)90568-6 / J. Crystal Growth by Nishinaga (1990)
10.1016/0022-0248(94)00579-6 / J. Crystal Growth by Fukui (1995)
10.1016/0022-0248(94)91038-3 / J. Crystal Growth by Kasu (1994)
10.1063/1.112069 / Appl. Phys. Lett. by Shinohara (1994)
10.1063/1.113658 / Appl. Phys. Lett. by Epler (1995)
10.1063/1.359732 / J. Appl. Phys. by Merlin (1995)
{'year': '1995', 'series-title': '22nd Int. Symp. on Compound Semiconductors, FrB2-3', 'author': 'Suhara', 'key': '10.1016/S0022-0248(97)00103-6_bib8'} / 22nd Int. Symp. on Compound Semiconductors, FrB2-3 by Suhara (1995)
10.1049/el:19890025 / Electron. Lett. by Imamura (1989)
10.1063/1.110831 / Appl. Phys. Lett. by Moise (1994)
10.1143/JJAP.32.4440 / Jpn. J. Appl. Phys. by Saito (1993)
{'year': '1963', 'series-title': 'Condensation and Evaporation, Nucleation and Growth Kinetics', 'author': 'Hirth', 'key': '10.1016/S0022-0248(97)00103-6_bib12'} / Condensation and Evaporation, Nucleation and Growth Kinetics by Hirth (1963)
10.1116/1.587811 / J. Vac. Sci. Technol. B by Shinohara (1995)
10.1143/JJAP.34.4417 / Jpn. J. Appl. Phys. by Kang (1995)
10.1143/JJAP.34.3589 / Jpn. J. Appl. Phys. by Matsuura (1995)
10.1143/JJAP.30.1164 / Jpn. J. Appl. Phys. by Tsuchiya (1991)

Dates

Type	When
Created	22 years, 4 months ago (April 30, 2003, 7:27 p.m.)
Deposited	3 years, 2 months ago (June 18, 2022, 4:04 a.m.)
Indexed	3 months ago (June 2, 2025, 1:30 p.m.)
Issued	28 years, 1 month ago (Aug. 1, 1997)
Published	28 years, 1 month ago (Aug. 1, 1997)
Published Print	28 years, 1 month ago (Aug. 1, 1997)

Funders 1

Ministry of Education, Culture, Sports, Science and Technology 10.13039/501100001700
Region: Asia
gov (National government)
Labels3
1. Monbu-kagaku-shō
2. 文部科学省
3. MEXT

BibTeX

@article{Suhara_1997, title={Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes}, volume={179}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/s0022-0248(97)00103-6}, DOI={10.1016/s0022-0248(97)00103-6}, number={1–2}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Suhara, Michihiko and Nagao, Chuma and Honji, Hidetaka and Miyamoto, Yasuyuki and Furuya, Kazuhito and Takemura, Riichiro}, year={1997}, month=aug, pages={18–25} }

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