DOI: 10.1016/s0022-0248(96)00967-0. Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs

Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs

10.1016/s0022-0248(96)00967-0

Crossref journal-article

Elsevier BV

Journal of Crystal Growth (78)

Bibliography

Shen, A., Ohno, H., Matsukura, F., Sugawara, Y., Akiba, N., Kuroiwa, T., Oiwa, A., Endo, A., Katsumoto, S., & Iye, Y. (1997). Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs. Journal of Crystal Growth, 175â176, 1069â1074.

Authors 10

A. Shen (first)
H. Ohno (additional)
F. Matsukura (additional)
Y. Sugawara (additional)
N. Akiba (additional)
T. Kuroiwa (additional)
A. Oiwa (additional)
A. Endo (additional)
S. Katsumoto (additional)
Y. Iye (additional)

References 16 Referenced 178

10.1063/1.321998 / J. Appl. Phys. by Ilegems (1975)
10.1088/0022-3719/21/32/008 / J. Phys. C by Frey (1988)
{'key': '10.1016/S0022-0248(96)00967-0_BIB3', 'first-page': '738', 'volume': '11', 'author': 'Andrianov', 'year': '1977', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. by Andrianov (1977)
{'volume': 'Vol. 25', 'year': '1988', 'key': '10.1016/S0022-0248(96)00967-0_BIB4'} (1988)
10.1103/PhysRevLett.63.1849 / Phys. Rev. Lett. by Munekata (1989)
10.1103/PhysRevB.53.4905 / Phys. Rev. B by Soo (1996)
10.1103/PhysRevLett.68.2664 / Phys. Rev. Lett. by Ohno (1992)
10.1063/1.347780 / J. Appl. Phys. by Ohno (1991)
10.1063/1.110276 / Appl. Phys. Lett. by Munekata (1993)
{'key': '10.1016/S0022-0248(96)00967-0_BIB10', 'series-title': 'Proc. 22nd Int. Conf. on Physics of Semiconductors', 'first-page': '2605', 'author': 'Ohno', 'year': '1995'} / Proc. 22nd Int. Conf. on Physics of Semiconductors by Ohno (1995)
10.4028/www.scientific.net/MSF.182-184.443 / Mater. Sci. Forum by Ohno (1995)
10.1016/0038-1098(95)00160-3 / Solid State Commun. by Basu (1995)
10.1143/JJAP.33.4581 / Jpn. J. Appl. Phys. by Adhikari (1994)
10.1063/1.115584 / Appl. Phys. Lett. by De Boeck (1996)
10.1063/1.118061 / Appl. Phys. Lett. by Ohno (1996)
A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, Y. Ohno, N. Akiba and T. Kuroiwa, unpublished.

Dates

Type	When
Created	22 years, 3 months ago (May 19, 2003, 2:04 p.m.)
Deposited	3 years, 2 months ago (June 18, 2022, 4:03 a.m.)
Indexed	3 weeks, 2 days ago (Aug. 2, 2025, 1:06 a.m.)
Issued	28 years, 3 months ago (May 1, 1997)
Published	28 years, 3 months ago (May 1, 1997)
Published Print	28 years, 3 months ago (May 1, 1997)

Funders 3

Mitsubishi Foundation 10.13039/501100004398
Region: Asia
pri (Trusts, charities, foundations (both public and private))
Labels1
1. The Mitsubishi Foundation
Japan Society for the Promotion of Science 10.13039/501100001691
Region: Asia
gov (National government)
Labels6
1. KAKENHI
2. 日本学術振興会
3. Gakushin
4. JSPS KAKEN
5. JSPS Grants-in-Aid for Scientific Research
6. JSPS
Ministry of Education, Culture, Sports, Science and Technology 10.13039/501100001700
Region: Asia
gov (National government)
Labels3
1. Monbu-kagaku-shō
2. 文部科学省
3. MEXT

BibTeX

@article{Shen_1997, title={Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs}, volume={175–176}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/s0022-0248(96)00967-0}, DOI={10.1016/s0022-0248(96)00967-0}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Shen, A. and Ohno, H. and Matsukura, F. and Sugawara, Y. and Akiba, N. and Kuroiwa, T. and Oiwa, A. and Endo, A. and Katsumoto, S. and Iye, Y.}, year={1997}, month=may, pages={1069–1074} }

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