DOI: 10.1016/b978-0-08-006768-1.50012-7. GROWTH OF SILICON CARBIDE FROM SOLUTION

GROWTH OF SILICON CARBIDE FROM SOLUTION

10.1016/b978-0-08-006768-1.50012-7

Crossref book-chapter

Elsevier

Silicon Carbide–1968 (78)

Bibliography

Marshall, R. C. (1969). GROWTH OF SILICON CARBIDE FROM SOLUTION. Silicon Carbideâ1968, S73âS84.

Authors 1

Robert C. Marshall (first)

References 17 Referenced 2

{'key': '10.1016/B978-0-08-006768-1.50012-7_bib1', 'series-title': 'Silicon Carbide - A High Temperature Semiconductor', 'first-page': '132', 'year': '1960'} / Silicon Carbide - A High Temperature Semiconductor (1960)
W. E. Nelson, A. Rosengreen, R. W. Bartlett, F. A. Halden and L. E. Marsh, Final Report, Growth and Characterization of Beta Silicon Carbide Single Crystals, Stanford Research Institute, February 1967, Contract AF19(628)-4190.
W.J. Silva, A. Rosengreen and L. E. Marsh, Final Report, Development of Manufacturing Methods for Growing Large Beta Silicon Carbide Single Crystals, Stanford Research Institute, AFML Contract F33615–67-C-1328.
10.1063/1.1730236 / J. Chem. Phys. by Scace (1959)
{'key': '10.1016/B978-0-08-006768-1.50012-7_bib5', 'first-page': '177', 'volume': 'I', 'author': 'Ryan', 'year': '1968'} by Ryan (1968)
{'key': '10.1016/B978-0-08-006768-1.50012-7_bib6', 'series-title': 'Silicon Carbide - A High Temperature Semiconductor', 'first-page': '115', 'author': 'Halden', 'year': '1960'} / Silicon Carbide - A High Temperature Semiconductor by Halden (1960)
10.1063/1.1723329 / J. Appl. Phys. by Hall (1958)
10.1149/1.2779671 / J. Electrochem. Soc. by Baumann (1952)
{'key': '10.1016/B978-0-08-006768-1.50012-7_bib9', 'first-page': '113', 'volume': '21', 'author': 'Knippenberg', 'year': '1966', 'journal-title': 'Philips Res. Rept.'} / Philips Res. Rept. by Knippenberg (1966)
10.1149/1.2426257 / J. Electrochem. Soc. by Griffiths (1964)
P. B. Pickar, Jr., Seed Pulling Method for Beta Silicon Carbide, U.S. Patent 3, 353, 914.
{'key': '10.1016/B978-0-08-006768-1.50012-7_bib12', 'series-title': 'Constitution of Binary Alloys', 'first-page': '504', 'author': 'Hansen', 'year': '1958'} / Constitution of Binary Alloys by Hansen (1958)
R. C. Marshall, International Conference on Crystal Growth, London, England, 1968 - to be published in J. Cryst. Growth.
{'key': '10.1016/B978-0-08-006768-1.50012-7_bib14', 'series-title': 'Constitution of Binary Alloys', 'first-page': '349', 'author': 'Hansen', 'year': '1958'} / Constitution of Binary Alloys by Hansen (1958)
10.2320/jinstmet1937.2.26 / Nippon Kinzoku Gakkaishi by Haschimoto (1938)
R. C. Marshall, High Pressure, High Temperature Crystal Growth System, AFCRL Report 67–0656(1967).
{'key': '10.1016/B978-0-08-006768-1.50012-7_bib17', 'series-title': 'Silicon Carbide - A High Temperature Semiconductor', 'first-page': '124', 'author': 'Ellis', 'year': '1960'} / Silicon Carbide - A High Temperature Semiconductor by Ellis (1960)

Dates

Type	When
Created	11 years, 9 months ago (Nov. 18, 2013, 11:10 a.m.)
Deposited	6 years, 10 months ago (Oct. 9, 2018, 10:55 p.m.)
Indexed	1 year, 3 months ago (May 3, 2024, 12:42 p.m.)
Issued	56 years, 7 months ago (Jan. 1, 1969)
Published	56 years, 7 months ago (Jan. 1, 1969)
Published Print	56 years, 7 months ago (Jan. 1, 1969)

Funders 0

None

BibTeX

@inbook{Marshall_1969, title={GROWTH OF SILICON CARBIDE FROM SOLUTION}, ISBN={9780080067681}, url={http://dx.doi.org/10.1016/b978-0-08-006768-1.50012-7}, DOI={10.1016/b978-0-08-006768-1.50012-7}, booktitle={Silicon Carbide–1968}, publisher={Elsevier}, author={Marshall, Robert C.}, year={1969}, pages={S73–S84} }

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