DOI: 10.1016/0960-8974(90)90003-b. Characterisation of heteroepitaxial compound semiconductor layers and superlattices using transmission electron microscopy

Characterisation of heteroepitaxial compound semiconductor layers and superlattices using transmission electron microscopy

10.1016/0960-8974(90)90003-b

Crossref journal-article

Elsevier BV

Progress in Crystal Growth and Characterization of Materials (78)

Bibliography

Cerva, H., & Oppolzer, H. (1990). Characterisation of heteroepitaxial compound semiconductor layers and superlattices using transmission electron microscopy. Progress in Crystal Growth and Characterization of Materials, 20(3), 231â261.

Authors 2

H. Cerva (first)
H. Oppolzer (additional)

References 40 Referenced 19

10.1016/0146-3535(89)90001-4 / Progress in Crystal Growth and Characterization by Halliwell (1989)
10.1016/0304-3991(87)90163-X / Ultramicroscopy by Chew (1987)
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Dates

Type	When
Created	21 years, 11 months ago (Sept. 3, 2003, 2:40 p.m.)
Deposited	6 years, 5 months ago (Feb. 25, 2019, 3:21 a.m.)
Indexed	1 year, 11 months ago (Sept. 3, 2023, 12:51 p.m.)
Issued	35 years, 7 months ago (Jan. 1, 1990)
Published	35 years, 7 months ago (Jan. 1, 1990)
Published Print	35 years, 7 months ago (Jan. 1, 1990)

Funders 0

None

BibTeX

@article{Cerva_1990, title={Characterisation of heteroepitaxial compound semiconductor layers and superlattices using transmission electron microscopy}, volume={20}, ISSN={0960-8974}, url={http://dx.doi.org/10.1016/0960-8974(90)90003-b}, DOI={10.1016/0960-8974(90)90003-b}, number={3}, journal={Progress in Crystal Growth and Characterization of Materials}, publisher={Elsevier BV}, author={Cerva, H. and Oppolzer, H.}, year={1990}, month=jan, pages={231–261} }

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