DOI: 10.1016/0927-796x(94)00175-8. Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE)

Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE)

10.1016/0927-796x(94)00175-8

Crossref journal-article

Elsevier BV

Materials Science and Engineering: R: Reports (78)

Bibliography

Abernathy, C. R. (1995). Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE). Materials Science and Engineering: R: Reports, 14(5), 203â253.

Authors 1

C.R. Abernathy (first)

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Dates

Type	When
Created	23 years, 1 month ago (July 25, 2002, 7:55 p.m.)
Deposited	6 years, 4 months ago (April 17, 2019, 10:21 a.m.)
Indexed	1 year, 6 months ago (Feb. 6, 2024, 7:26 p.m.)
Issued	30 years, 4 months ago (May 1, 1995)
Published	30 years, 4 months ago (May 1, 1995)
Published Print	30 years, 4 months ago (May 1, 1995)

Funders 0

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BibTeX

@article{Abernathy_1995, title={Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE)}, volume={14}, ISSN={0927-796X}, url={http://dx.doi.org/10.1016/0927-796x(94)00175-8}, DOI={10.1016/0927-796x(94)00175-8}, number={5}, journal={Materials Science and Engineering: R: Reports}, publisher={Elsevier BV}, author={Abernathy, C.R.}, year={1995}, month=may, pages={203–253} }

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