DOI: 10.1016/0921-4526(93)90282-b. Electric properties of GaN : Zn MIS-type light emitting diode

Electric properties of GaN : Zn MIS-type light emitting diode

10.1016/0921-4526(93)90282-b

Crossref journal-article

Elsevier BV

Physica B: Condensed Matter (78)

Bibliography

Khan, Md. R. H., Akasaki, I., Amano, H., Okazaki, N., & Manabe, K. (1993). Electric properties of GaNâ¯: Zn MIS-type light emitting diode. Physica B: Condensed Matter, 185(1â4), 480â484.

Authors 5

Md.Rezaul Huque Khan (first)
Isamu Akasaki (additional)
Hiroshi Amano (additional)
Nobuo Okazaki (additional)
Katsuhide Manabe (additional)

References 17 Referenced 9

10.1063/1.1652845 / Appl. Phys. Lett. by Maruska (1969)
{'key': '10.1016/0921-4526(93)90282-B_BIB2', 'first-page': '383', 'volume': '32', 'author': 'Pankove', 'year': '1971', 'journal-title': 'RCA Rev.'} / RCA Rev. by Pankove (1971)
10.1016/0022-2313(71)90009-3 / J. Lumin. by Pankove (1971)
10.1016/0022-2313(72)90038-5 / J. Lumin. by Pankove (1972)
10.1016/0022-2313(73)90094-X / J. Lumin. by Pankove (1973)
10.1016/0022-2313(73)90062-8 / J. Lumin. by Pankove (1973)
10.1016/0025-5408(72)90127-4 / Mater. Res. Bull. by Maruska (1972)
10.1063/1.1654648 / Appl. Phys. Lett. by Maruska (1973)
10.1016/0038-1101(74)90161-0 / Solid State Electron. by Maruska (1974)
10.1063/1.1663574 / J. Appl. Phys. by Lagerstedt (1974)
10.1063/1.1661813 / J. Appl. Phys. by Ilegems (1972)
10.1103/PhysRevLett.33.361 / Phys. Rev. Lett. by Pankove (1974)
10.1016/S0022-3697(73)80090-3 / J. Phys. Chem. Solids by Ilegems (1973)
{'key': '10.1016/0921-4526(93)90282-B_BIB14', 'first-page': '402', 'article-title': 'Physics of Semiconductor Devices', 'author': 'Sze', 'year': '1981'} / Physics of Semiconductor Devices by Sze (1981)
10.1109/T-ED.1975.18210 / IEEE Trans. Electron Devices ED-22 by Pankove (1975)
10.1103/PhysRevLett.34.809 / Phys. Rev. Lett. by Pankove (1975)
10.1002/pssa.2210300135 / Phys. Stat. Sol. A by Dixit (1975)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 17, 2002, 1:18 p.m.)
Deposited	6 years, 4 months ago (April 6, 2019, 8:50 p.m.)
Indexed	1 year, 6 months ago (Feb. 3, 2024, 5:41 p.m.)
Issued	32 years, 4 months ago (April 1, 1993)
Published	32 years, 4 months ago (April 1, 1993)
Published Print	32 years, 4 months ago (April 1, 1993)

Funders 0

None

BibTeX

@article{Khan_1993, title={Electric properties of GaN : Zn MIS-type light emitting diode}, volume={185}, ISSN={0921-4526}, url={http://dx.doi.org/10.1016/0921-4526(93)90282-b}, DOI={10.1016/0921-4526(93)90282-b}, number={1–4}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Khan, Md.Rezaul Huque and Akasaki, Isamu and Amano, Hiroshi and Okazaki, Nobuo and Manabe, Katsuhide}, year={1993}, month=apr, pages={480–484} }

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